Resonant frequencies of the two-dimensional plasma in field effect transistors (FETs) increase with the reduction of the channel dimensions and can reach the THz range for nanometer size devices. Nonlinear properties of the electron plasma in the transistor channel can lead to the detection and emission of THz radiation. The excitation of plasma waves by sub-THz and THz radiation was experimentally demonstrated at cryogenic as well as at room temperatures. We present an overview of experimental results on THz detection by FETs discussing possibilities of improvement of their performance and application for THz room temperature imaging. We present also recent results on THz emission from GaN/AlGaN-based FETs.
Les fréquences de résonance de plasma bidimensionnel dans les transistors à effet de champ (FET) augmentent quand la taille du canal du transistor diminue, et ainsi peuvent atteindre le domaine térahertz pour des canaux nanométriques. Les propriétés non linéaires du plasma électronique dans le canal du FET permettent la génération et la détection du rayonnement THz. L'excitation de ces ondes plasma par un rayonnement sub-THz et THz a été démontrée expérimentalement à des températures cryogéniques mais aussi ambiantes. Nous présentons une revue des résultats expérimentaux de détection des ondes THz à l'aide de FET et nous discutons des possibilités d'amélioration de leurs performances en vue d'application pour l'imagerie THz à température ambiante. Nous présentons aussi des résultats récents de l'émission THz par des FET à base de GaN/AlGaN.
Mots-clés : Transistor à effet de champ, Térahertz
W. Knap 1; D. Coquillat 1; N. Dyakonova 1; F. Teppe 1; O. Klimenko 1; H. Videlier 1; S. Nadar 1; J. Łusakowski 2; G. Valusis 3; F. Schuster 1, 4; B. Giffard 4; T. Skotnicki 5; C. Gaquière 6; A. El Fatimy 7
@article{CRPHYS_2010__11_7-8_433_0,
author = {W. Knap and D. Coquillat and N. Dyakonova and F. Teppe and O. Klimenko and H. Videlier and S. Nadar and J. {\L}usakowski and G. Valusis and F. Schuster and B. Giffard and T. Skotnicki and C. Gaqui\`ere and A. El Fatimy},
title = {Plasma excitations in field effect transistors for terahertz detection and emission},
journal = {Comptes Rendus. Physique},
pages = {433--443},
publisher = {Elsevier},
volume = {11},
number = {7-8},
year = {2010},
doi = {10.1016/j.crhy.2010.06.010},
language = {en},
}
TY - JOUR AU - W. Knap AU - D. Coquillat AU - N. Dyakonova AU - F. Teppe AU - O. Klimenko AU - H. Videlier AU - S. Nadar AU - J. Łusakowski AU - G. Valusis AU - F. Schuster AU - B. Giffard AU - T. Skotnicki AU - C. Gaquière AU - A. El Fatimy TI - Plasma excitations in field effect transistors for terahertz detection and emission JO - Comptes Rendus. Physique PY - 2010 SP - 433 EP - 443 VL - 11 IS - 7-8 PB - Elsevier DO - 10.1016/j.crhy.2010.06.010 LA - en ID - CRPHYS_2010__11_7-8_433_0 ER -
%0 Journal Article %A W. Knap %A D. Coquillat %A N. Dyakonova %A F. Teppe %A O. Klimenko %A H. Videlier %A S. Nadar %A J. Łusakowski %A G. Valusis %A F. Schuster %A B. Giffard %A T. Skotnicki %A C. Gaquière %A A. El Fatimy %T Plasma excitations in field effect transistors for terahertz detection and emission %J Comptes Rendus. Physique %D 2010 %P 433-443 %V 11 %N 7-8 %I Elsevier %R 10.1016/j.crhy.2010.06.010 %G en %F CRPHYS_2010__11_7-8_433_0
W. Knap; D. Coquillat; N. Dyakonova; F. Teppe; O. Klimenko; H. Videlier; S. Nadar; J. Łusakowski; G. Valusis; F. Schuster; B. Giffard; T. Skotnicki; C. Gaquière; A. El Fatimy. Plasma excitations in field effect transistors for terahertz detection and emission. Comptes Rendus. Physique, Terahertz electronic and optoelectronic components and systems, Volume 11 (2010) no. 7-8, pp. 433-443. doi : 10.1016/j.crhy.2010.06.010. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/j.crhy.2010.06.010/
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