Hexagonal boron nitride: optical properties in the deep ultraviolet

Guillaume Cassabois; Adrien Rousseau; Christine Elias; Thomas Pelini; Phuong Vuong; Pierre Valvin; Bernard Gil

doi:10.5802/crphys.78

Hexagonal boron nitride: optical properties in the deep ultraviolet
[Nitrure de bore hexagonal : propriétés optiques dans l’ultraviolet profond]

Guillaume Cassabois ¹ ; Adrien Rousseau ¹ ; Christine Elias ¹ ; Thomas Pelini ¹ ; Phuong Vuong ¹ ; Pierre Valvin ¹ ; Bernard Gil ¹

¹ Laboratoire Charles Coulomb, UMR 5221 CNRS-Université de Montpellier, 34095 Montpellier, France

Comptes Rendus. Physique, Volume 22 (2021) no. S4, pp. 69-76.

Résumé
Abstract

Cette revue est dédiée aux progrès récents dans la compréhension des propriétés optoélectroniques du nitrure de bore hexagonal (hBN) dans l’ultraviolet profond. La comparaison entre un cristal massif de hBN et une monocouche de hBN montre quelques unes de leurs différences majeures telles que la nature de la bande interdite, l’énergie de liaison excitonique ainsi que l’élargissement des raies excitoniques assisté par phonons. Les perspectives mettent en avant la nécessité d’étudier le régime d’échantillons composés de quelques monocouches de hBN, y compris des monocouches tournées dans le contexte actuel de la twistronique.

We review the recent advance in the understanding of the optoelectronic properties of hexagonal boron nitride (hBN) in the deep ultraviolet. The comparison between bulk hBN and monolayer hBN highlights some of their major differences such the bandgap nature, the excitonic binding energy and the phonon-assisted broadening of the excitonic lines. Perspectives point out the relevance of addressing the regime of hBN samples made of a very few number of monolayers, including twisted hBN monolayers in the context of twistronics.

Première publication : 2021-06-25
Publié le : 2022-03-08

DOI : 10.5802/crphys.78

Keywords: hBN, Ultraviolet, Spectroscopy, 2D crystals, Monolayer
Mot clés : hBN, Ultraviolet, Spectroscopie, Cristaux 2D, Monocouche

Affiliations des auteurs :

Guillaume Cassabois ¹ ; Adrien Rousseau ¹ ; Christine Elias ¹ ; Thomas Pelini ¹ ; Phuong Vuong ¹ ; Pierre Valvin ¹ ; Bernard Gil ¹

¹ Laboratoire Charles Coulomb, UMR 5221 CNRS-Université de Montpellier, 34095 Montpellier, France

Licence :

CC-BY 4.0

Droits d'auteur : Les auteurs conservent leurs droits

@article{CRPHYS_2021__22_S4_69_0,
     author = {Guillaume Cassabois and Adrien Rousseau and Christine Elias and Thomas Pelini and Phuong Vuong and Pierre Valvin and Bernard Gil},
     title = {Hexagonal boron nitride: optical properties in the deep ultraviolet},
     journal = {Comptes Rendus. Physique},
     pages = {69--76},
     publisher = {Acad\'emie des sciences, Paris},
     volume = {22},
     number = {S4},
     year = {2021},
     doi = {10.5802/crphys.78},
     language = {en},
}

TY  - JOUR
AU  - Guillaume Cassabois
AU  - Adrien Rousseau
AU  - Christine Elias
AU  - Thomas Pelini
AU  - Phuong Vuong
AU  - Pierre Valvin
AU  - Bernard Gil
TI  - Hexagonal boron nitride: optical properties in the deep ultraviolet
JO  - Comptes Rendus. Physique
PY  - 2021
SP  - 69
EP  - 76
VL  - 22
IS  - S4
PB  - Académie des sciences, Paris
DO  - 10.5802/crphys.78
LA  - en
ID  - CRPHYS_2021__22_S4_69_0
ER  -

%0 Journal Article
%A Guillaume Cassabois
%A Adrien Rousseau
%A Christine Elias
%A Thomas Pelini
%A Phuong Vuong
%A Pierre Valvin
%A Bernard Gil
%T Hexagonal boron nitride: optical properties in the deep ultraviolet
%J Comptes Rendus. Physique
%D 2021
%P 69-76
%V 22
%N S4
%I Académie des sciences, Paris
%R 10.5802/crphys.78
%G en
%F CRPHYS_2021__22_S4_69_0

Guillaume Cassabois; Adrien Rousseau; Christine Elias; Thomas Pelini; Phuong Vuong; Pierre Valvin; Bernard Gil. Hexagonal boron nitride: optical properties in the deep ultraviolet. Comptes Rendus. Physique, Volume 22 (2021) no. S4, pp. 69-76. doi : 10.5802/crphys.78. https://comptes-rendus.academie-sciences.fr/physique/articles/10.5802/crphys.78/

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