Graphene is known to have small intrinsic spin-orbit Interaction (SOI). In this review, we demonstrate that SOIs in graphene can be strongly enhanced by proximity effect when graphene is deposited on the top of transition metal dichalcogenides. We discuss the symmetry of the induced SOIs and differences between TMD underlayers in the capacity of inducing strong SOIs in graphene. The strong SOIs contribute to bring novel phenomena to graphene, exemplified by robust supercurrents sustained even under tesla-range magnetic fields.
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Taro Wakamura 1, 2; Sophie Guéron 2; Hélène Bouchiat 2
@article{CRPHYS_2021__22_S4_145_0, author = {Taro Wakamura and Sophie Gu\'eron and H\'el\`ene Bouchiat}, title = {Novel transport phenomena in graphene induced by strong spin-orbit interaction}, journal = {Comptes Rendus. Physique}, pages = {145--162}, publisher = {Acad\'emie des sciences, Paris}, volume = {22}, number = {S4}, year = {2021}, doi = {10.5802/crphys.93}, language = {en}, }
TY - JOUR AU - Taro Wakamura AU - Sophie Guéron AU - Hélène Bouchiat TI - Novel transport phenomena in graphene induced by strong spin-orbit interaction JO - Comptes Rendus. Physique PY - 2021 SP - 145 EP - 162 VL - 22 IS - S4 PB - Académie des sciences, Paris DO - 10.5802/crphys.93 LA - en ID - CRPHYS_2021__22_S4_145_0 ER -
Taro Wakamura; Sophie Guéron; Hélène Bouchiat. Novel transport phenomena in graphene induced by strong spin-orbit interaction. Comptes Rendus. Physique, Recent advances in 2D material physics, Volume 22 (2021) no. S4, pp. 145-162. doi : 10.5802/crphys.93. https://comptes-rendus.academie-sciences.fr/physique/articles/10.5802/crphys.93/
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