THz emission from semiconductor surfaces

Vitalij L. Malevich; Ramūnas Adomavičius; Arūnas Krotkus

doi:10.1016/j.crhy.2007.09.014

THz emission from semiconductor surfaces
[Émission THz des surfaces de matériaux semi-conducteurs]

Vitalij L. Malevich ¹ ; Ramūnas Adomavičius ² ; Arūnas Krotkus ^2,³

¹ Institute of Physics, National Academy of Sciences of Belarus, F. Skaryna Ave. 68, 220072 Minsk, Belarus
² Semiconductor Physics Institute, 01108 Vilnius, Lithuania
³ Department of Semiconductor Physics, Vilnius University, 10222 Vilnius, Lithuania

Comptes Rendus. Physique, Volume 9 (2008) no. 2, pp. 130-141.

Résumé
Abstract

Nous présentons une revue des travaux expérimentaux et théoriques consacrés à l'émission de rayonnement térahertz par des surfaces de matériaux semi-conducteurs éclairées par des impulsions lasers de durée femtoseconde. Les principaux mécanismes d'émission THz sont analysés. L'émission THz rayonnée par InAs et Ge est due à l'effet Dember optique associé à du redressement optique. Nous étudions la structure de bande électronique et les phénomènes de relaxation des porteurs libres dans InAs, InSb et Ge, en analysant cette émission THz de surface ainsi que des résultats de spectroscopie THz d'absorption.

We provide a review of experimental and theoretical work on electromagnetic terahertz pulse emission from semiconductor surfaces excited by femtosecond laser radiation. The main terahertz emission mechanisms are analysed. The terahertz emission from InAs and Ge is explained by the photo-Dember effect and electric field induced optical rectification. Electronic band structure and carrier scattering mechanisms are investigated by means of terahertz emission and absorption spectroscopy in InAs, InSb and Ge.

Publié le : 2008-01-04

DOI : 10.1016/j.crhy.2007.09.014

Keywords: Terahertz emission, Photo-Dember effect, Electric field induced optical rectification
Mot clés : Émission térahertz, Effet Dember optique, Redressement optique

Affiliations des auteurs :

Vitalij L. Malevich ¹ ; Ramūnas Adomavičius ² ; Arūnas Krotkus ^{2, 3}

¹ Institute of Physics, National Academy of Sciences of Belarus, F. Skaryna Ave. 68, 220072 Minsk, Belarus
² Semiconductor Physics Institute, 01108 Vilnius, Lithuania
³ Department of Semiconductor Physics, Vilnius University, 10222 Vilnius, Lithuania

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     author = {Vitalij L. Malevich and Ram\={u}nas Adomavi\v{c}ius and Ar\={u}nas Krotkus},
     title = {THz emission from semiconductor surfaces},
     journal = {Comptes Rendus. Physique},
     pages = {130--141},
     publisher = {Elsevier},
     volume = {9},
     number = {2},
     year = {2008},
     doi = {10.1016/j.crhy.2007.09.014},
     language = {en},
}

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Vitalij L. Malevich; Ramūnas Adomavičius; Arūnas Krotkus. THz emission from semiconductor surfaces. Comptes Rendus. Physique, Volume 9 (2008) no. 2, pp. 130-141. doi : 10.1016/j.crhy.2007.09.014. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/j.crhy.2007.09.014/

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