Infrared photodetection with semiconductor self-assembled quantum dots

Philippe Boucaud; Sébastien Sauvage

doi:10.1016/j.crhy.2003.10.020

Infrared photodetection with semiconductor self-assembled quantum dots
[Photodétection infrarouge avec les boı̂tes quantiques semi-conductrices auto-assemblées]

Présenté par : Guy Laval

Philippe Boucaud ¹ ; Sébastien Sauvage ¹

¹ Institut d'électronique fondamentale, unité mixte de recherche CNRS 8622, bâtiment 220, Université Paris-Sud, 91405 Orsay, France

Comptes Rendus. Physique, ir vision: from chip to image, Volume 4 (2003) no. 10, pp. 1133-1154.

Résumé
Abstract

Les boı̂tes quantiques semi-conductrices auto-assemblées sont des candidates pour le développement d'une nouvelle classe de photodétecteurs quantiques et de matrices fonctionnant dans le moyen infrarouge. Dans cet article, nous décrivons les propriétés des transitions intersousniveaux des boı̂tes quantiques InAs/GaAs. La structure électronique qui tient compte du champ de contrainte dans les boı̂tes est obtenue dans un formalisme $k . p$ à 8 bandes en tenant compte du confinement tridimensionnel. L'absorption intersousniveaux dans le moyen infrarouge de boı̂tes quantiques dopées n est décrite. Nous montrons que la dynamique des porteurs peut être comprise dans le cadre d'une théorie de polarons qui résulte du régime de couplage fort pour l'interaction électron–phonon dans les boı̂tes. Le principe de fonctionnement de photodétecteurs moyen infrarouge à boı̂tes quantiques verticaux et latéraux est décrit et discuté par référence à celui des photodétecteurs à puits quantiques. Les performances de différents types de détecteurs développés à ce jour sont présentées et nous donnons des directions pour la réalisation de photodétecteurs moyen infrarouge à boı̂tes quantiques performants.

Semiconductor self-assembled quantum dots are potential candidates to develop a new class of midinfrared quantum photodetectors and focal plane arrays. In this article, we present the specific midinfrared properties of InAs/GaAs quantum dots associated with the intersublevel transitions. The electronic structure, which accounts for the strain field in the islands, is obtained within the framework of a three-dimensional 8 band $k . p$ formalism. The midinfrared intersublevel absorption in n-doped quantum dots is described. We show that the carrier dynamics can be understood in terms of polarons which result from the strong coupling regime for the electron–phonon interaction in the dots. The principle of operation of vertical and lateral quantum dot infrared photodetectors is described and discussed by comparison with quantum well infrared photodetectors. We review the performances of different type of detectors developed to date and finally give some orientation to realize high performance quantum dot infrared photodetectors.

Publié le : 2003-12-01

DOI : 10.1016/j.crhy.2003.10.020

Affiliations des auteurs :

Philippe Boucaud ¹ ; Sébastien Sauvage ¹

¹ Institut d'électronique fondamentale, unité mixte de recherche CNRS 8622, bâtiment 220, Université Paris-Sud, 91405 Orsay, France

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     title = {Infrared photodetection with semiconductor self-assembled quantum dots},
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     publisher = {Elsevier},
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     language = {en},
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Philippe Boucaud; Sébastien Sauvage. Infrared photodetection with semiconductor self-assembled quantum dots. Comptes Rendus. Physique, ir vision: from chip to image, Volume 4 (2003) no. 10, pp. 1133-1154. doi : 10.1016/j.crhy.2003.10.020. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/j.crhy.2003.10.020/

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T. GEBHARD; K. UNTERRAINER; D. ALVARENGA; P. S. S. GUIMARAES; J. M. VILLAS-BOAS; M. P. PIRES; G. S. VIEIRA; P. L. SOUZA INTRABAND AUGER EFFECT IN QUANTUM DOT STRUCTURES, International Journal of Modern Physics B, Volume 23 (2009) no. 12n13, p. 2872 | DOI:10.1142/s0217979209062487
A. Rogalski; J. Antoszewski; L. Faraone Third-generation infrared photodetector arrays, Journal of Applied Physics, Volume 105 (2009) no. 9 | DOI:10.1063/1.3099572
R. Nedzinskas; B. Čechavičius; J. Kavaliauskas; V. Karpus; D. Seliuta; V. Tamošiūnas; G. Valušis; G. Fasching; K. Unterrainer; G. Strasser Modulated reflectance study of InAs quantum dot stacks embedded in GaAs/AlAs superlattice, Journal of Applied Physics, Volume 106 (2009) no. 6 | DOI:10.1063/1.3212980
A. Mir; V. Ahmadi Design and analysis of a new structure of InAs/GaAs QDIP for 8–12 μm infrared windows with low dark current, Journal of Modern Optics, Volume 56 (2009) no. 15, p. 1704 | DOI:10.1080/09500340903289144
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H. Rasooli Saghai; N. Sadoogi; A. Rostami; H. Baghban Ultra-high detectivity room temperature THZ-IR photodetector based on resonant tunneling spherical centered defect quantum dot (RT-SCDQD), Optics Communications, Volume 282 (2009) no. 17, p. 3499 | DOI:10.1016/j.optcom.2009.05.064
Julien Houel; Estelle Homeyer; Xavier Checoury; Stephane Laurent; Guy Fishman; Sebastien Sauvage; Philippe Boucaud; Stephane Guilet; Remi Braive; Audrey Miard; Aristide Lemaitre; Isabelle Sagnes Two‐dimensional photonic crystals for mid‐infrared quantum dot intersublevel emission, physica status solidi (b), Volume 246 (2009) no. 4, p. 816 | DOI:10.1002/pssb.200880588
T. Gebhard; D. Alvarenga; P. L. Souza; P. S. S. Guimarães; K. Unterrainer; M. P. Pires; G. S. Vieira; J. M. Villas-Boas Intraband Auger effect in InAs∕InGaAlAs∕InP quantum dot structures, Applied Physics Letters, Volume 93 (2008) no. 5 | DOI:10.1063/1.2965804
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Sarath D. Gunapala; Sumith V. Bandara; Cory J. Hill; David Z. Ting; John K. Liu; Sir B. Rafol; Edward R. Blazejewski; Jason M. Mumolo; Sam A. Keo; Sanjay Krishna; Y.-C. Chang; Craig A. Shott 640 $\times$ 512 Pixels Long-Wavelength Infrared (LWIR) Quantum-Dot Infrared Photodetector (QDIP) Imaging Focal Plane Array, IEEE Journal of Quantum Electronics, Volume 43 (2007) no. 3, p. 230 | DOI:10.1109/jqe.2006.889645
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Andrei Schliwa; Momme Winkelnkemper; Dieter Bimberg Impact of size, shape, and composition on piezoelectric effects and electronic properties ofIn(Ga)As∕GaAsquantum dots, Physical Review B, Volume 76 (2007) no. 20 | DOI:10.1103/physrevb.76.205324
Julien Houel; Sébastien Sauvage; Philippe Boucaud; Alexandre Dazzi; Rui Prazeres; François Glotin; Jean-Michel Ortéga; Audrey Miard; Aristide Lemaître Ultraweak-Absorption Microscopy of a Single Semiconductor Quantum Dot in the Midinfrared Range, Physical Review Letters, Volume 99 (2007) no. 21 | DOI:10.1103/physrevlett.99.217404
S. Sauvage; P. Boucaud Intersublevel polaron laser with InAs∕GaAs self-assembled quantum dots, Applied Physics Letters, Volume 88 (2006) no. 6 | DOI:10.1063/1.2169919
Guan-jie Zhang; Yong-chun Shu; Jiang-hong Yao; Qiang Shu; Hao-liang Deng; Guo-zhi Jia; Zhan-guo Wang Characteristics and developments of quantum-dot infrared photodetectors, Frontiers of Physics in China, Volume 1 (2006) no. 3, p. 334 | DOI:10.1007/s11467-006-0030-z
S. Sauvage; P. Boucaud; F. Bras; G. Fishman; J.‐M. Ortéga; J.‐M. Gérard; G. Patriarche; A. Lemaître Towards a mid‐infrared polaron laser using InAs/GaAs self‐assembled quantum dots, physica status solidi (b), Volume 243 (2006) no. 15, p. 3895 | DOI:10.1002/pssb.200671517
C. Kammerer; S. Sauvage; G. Fishman; P. Boucaud; G. Patriarche; A. Lemaître Mid-infrared intersublevel absorption of vertically electronically coupled InAs quantum dots, Applied Physics Letters, Volume 87 (2005) no. 17 | DOI:10.1063/1.2117621
Chalongrat Daengngam; Teparksorn Pengpan Computer simulation of the electron energy levels in a tetrahedral-shaped quantum dot, European Journal of Physics, Volume 26 (2005) no. 6, p. 1139 | DOI:10.1088/0143-0807/26/6/022
Dj. Veljković; M. Tadić; F.M. Peeters Intersublevel Absorption in Stacked n-Type Doped Self-Assembled Quantum Dots, Materials Science Forum, Volume 494 (2005), p. 37 | DOI:10.4028/www.scientific.net/msf.494.37
M. Tadić; F. M. Peeters Intersublevel magnetoabsorption in the valence band ofp-typeInAs∕GaAsandGe∕Siself-assembled quantum dots, Physical Review B, Volume 71 (2005) no. 12 | DOI:10.1103/physrevb.71.125342
D. P. Nguyen; N. Regnault; R. Ferreira; G. Bastard Electronic continuum states and far-infrared absorption ofInAs∕GaAsquantum dots, Physical Review B, Volume 71 (2005) no. 24 | DOI:10.1103/physrevb.71.245329

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