[Confirmation théorique de la cristallisation d'un alliage composite utilisant la méthode AHP]
La croissance cristalline du InxGa1−xSb pour
The crystallization of InxGa1−xSb for
Mots-clés : Mécanique des fluides numérique, Convection thermo-solutale, Transitions, Interface, Diagramme de phase
Marina Marchenko 1
@article{CRMECA_2007__335_5-6_315_0, author = {Marina Marchenko}, title = {Theoretical confirmation of the crystallization of a compound alloy using the {AHP} crystal growth method}, journal = {Comptes Rendus. M\'ecanique}, pages = {315--322}, publisher = {Elsevier}, volume = {335}, number = {5-6}, year = {2007}, doi = {10.1016/j.crme.2007.05.012}, language = {en}, }
TY - JOUR AU - Marina Marchenko TI - Theoretical confirmation of the crystallization of a compound alloy using the AHP crystal growth method JO - Comptes Rendus. Mécanique PY - 2007 SP - 315 EP - 322 VL - 335 IS - 5-6 PB - Elsevier DO - 10.1016/j.crme.2007.05.012 LA - en ID - CRMECA_2007__335_5-6_315_0 ER -
Marina Marchenko. Theoretical confirmation of the crystallization of a compound alloy using the AHP crystal growth method. Comptes Rendus. Mécanique, Melting and solidification: processes and models, Volume 335 (2007) no. 5-6, pp. 315-322. doi : 10.1016/j.crme.2007.05.012. https://comptes-rendus.academie-sciences.fr/mecanique/articles/10.1016/j.crme.2007.05.012/
[1] Experimental study of the solid–liquid interface dynamics and chemical segregation in semiconductor alloy Bridgman growth, Journal of Crystal Growth, Volume 275 (2005), pp. 422-432
[2] Journal of Crystal Growth, 32 (1976), p. 101
[3] Numerical analysis of solute distribution and interface stabilization during experimental Bridgman growth of concentrated GaInSb alloys, Journal of Crystal Growth, Volume 275 (2005), p. e585-e594
[4] M. Marchenko, T. Duffar, Numerical study of boundary condition influence on convective flow and heat/mass transfer during concentrated alloy Bridgman crystal growth, in: 13th International Heat Transfer Conference, Sydney, Australia, 2006, submitted for publication
[5] A. Ostrogorsky, US Patent Application S.N. 397741, 1989
[6] V. Golyshev, M. Gonik, Patent of RF # 180085415, 1990
[7] Investigation of conditions for homogeneous Ga1−xInxSb crystals growth under conditions of weak melt flows, J. Crystallography, Volume 49 (2004) no. 2, pp. 369-375 (in Russian)
[8] S. Bykova, V. Golyshev, M. Gonik, V. Tsvetovsky, M. Marchenko, I. Frjazinov, T. Duffar, Investigation of conditions for homogeneous Ga1−xInxSb crystals growth under conditions of weak melt flows, in: Proceeding of the 5th Int. Conference on Single Crystal Growth and Heat & Mass Transfer, vol. 1, Obninsk, Russia, 22–26 September, 2003, pp. 101–108
[9] V. Golyshev, M. Marchenko, I. Frjasinov, Effect of boundary temperature conditions on the shape of the phase interface, on melt flow and impurity distribution during the growth of single crystals by the AHP-method, in: Proc. 4th Int. Conf. on Single Crystal Growth and Heat & Mass Transfer, vol. 3, Obninsk, Russia, 24–28 September, 2001, pp. 715–724
[10] Numerical study of low frequency oscillation appearance during InxGa1−xSb crystal growth by Bridgman and AHP methods (A.J. Nowak; R.A. Bialecki; G. Wecel, eds.), Eurotherm Seminar 82, Numerical Heat Transfer, vol. 3, 2005, pp. 703-712 (ISBN: 83-922381-2-5)
[11] et al., Modern Crystallography, vol. 3, Nauka, Moscow, 1980 (in Russian)
[12] Computer code CARMA1 for solving nonstationary problem of crystal growth in ampoule, Journal of Computational Mathematics and Mathematical Physics, Volume 37 (1997) no. 8, pp. 988-998
[13] Monotone corrective terms and coupled algorithm for Navier–Stokes equations of an incompressible flow, Journal of Mathematical Modelling, Volume 6 (1994) no. N12, pp. 97-116 (in Russian)
[14] M. Marchenko, Use of uniform algorithm for heat and mass transfer during directional crystallization both from dopant and from binary melt, in: Proceedings of 4th ICCHMT May 17–20, 2005, Paris-Cachan, France, ICCHMT'05, paper-426
[15] M. Marchenko, I. Friazinov, Mathematical model and numerical realization of faceted crystal growth process, Crystallography Reports 50, N6, pp. 1114–1122
Cité par Sources :
Commentaires - Politique