High-brightness diode lasers

Hans Wenzel; Bernd Sumpf; Götz Erbert

doi:10.1016/S1631-0705(03)00074-4

High-brightness diode lasers

Presented by: Guy Laval

Hans Wenzel ¹ ; Bernd Sumpf ¹; Götz Erbert ¹

¹ Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Strasse 11, 12489 Berlin, Germany

Comptes Rendus. Physique, semiconductor lasers, Volume 4 (2003) no. 6, pp. 649-661.

Abstract (Original language)
Résumé

The basic concepts and some modelling aspects of high-brightness semiconductor lasers are reviewed. The technology of lasers with a tapered gain-region is described. They provide the highest brightness of a semiconductor source with continuous wave emission in the visible and near infrared spectral range. Experimental results are presented for tapered lasers emitting at 735 nm and 808 nm. Output powers of 3 W were achieved in nearly diffraction limited beams.

Les concepts de base et certains aspects de la modélisation des lasers semiconducteurs de haute luminance sont passés en revue. La technologie des lasers comportant une section amplificatrice évasée est décrite. Ils constituent les sources semiconductrices émettant en continu ayant la plus forte luminance dans le domaine spectral visible et proche infrarouge. Des résultats expérimentaux sont présentés pour des lasers évasés émettant à 735 nm et à 808 nm. Des puissances de 3 W ont été obtenues avec des faisceaux presque limités par la diffraction.

Received: 2003-03-10
Accepted: 2003-03-11
Published online: 2003-07-01

DOI: 10.1016/S1631-0705(03)00074-4

Keywords: Semiconductor lasers, High brightness, High power, Beam quality, Tapered lasers, Modelling
Mots-clés : Lasers semiconducteurs, Forte luminance, Forte puissance, Qualité de faisceau, Lasers évasés, Modélisation

Author's affiliations:

Hans Wenzel ¹; Bernd Sumpf ¹; Götz Erbert ¹

¹ Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Strasse 11, 12489 Berlin, Germany

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Hans Wenzel; Bernd Sumpf; Götz Erbert. High-brightness diode lasers. Comptes Rendus. Physique, semiconductor lasers, Volume 4 (2003) no. 6, pp. 649-661. doi : 10.1016/S1631-0705(03)00074-4. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/S1631-0705(03)00074-4/

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