Comptes Rendus
InP-based wavelength tunable vertical cavity surface emitting laser structures
Comptes Rendus. Physique, semiconductor lasers, Volume 4 (2003) no. 6, pp. 675-685.

We report on the design, fabrication and characteristics of both hybrid and monolithic micro-electro-mechanically wavelength tunable 1.55 μm InP-based Vertical-Cavity Surface-Emitting Laser (VCSEL) structures. Photo-pumped tunable VCSELs are successfully realized using both configurations, and a design for electrically pumped tunable VCSEL is presented.

Nous présentons la conception, la fabrication et les caractéristiques de lasers à cavité verticale accordables en longueur d'onde mettant en œuvre une configuration hybride et une configuration en intégration monolithique. Dans les deux cas l'émission laser accordable en longueur d'onde a été obtenue en régime de pompage optique. Un concept de laser monolithique accordable pompé électriquement est également présenté.

Received:
Accepted:
Published online:
DOI: 10.1016/S1631-0705(03)00082-3
Keywords: Tunable lasers, Vertical surface emitting lasers, III-V semiconductors, Micro-opto-electro-mechanical systems
Mots-clés : Lasers accordables, Lasers à cavité verticale, Semiconducteurs III-V, Membranes semiconductrices

Isabelle Sagnes 1; Martin Strassner 2; Sophie Bouchoule 1; Jean-Louis Leclerq 3; Philippe Regreny 3; Aldrice Bakouboula 4; Frank Riemenschneider 5; Peter Meissner 5

1 Laboratoire de photonique et nanostructures, LPN, CNRS UPR 20, route de Nozay, Marcoussis, France
2 Institute for Microelectronics and Information Technology, Kungl Tekniska Högskolan – KTH, Stockholm, Sweden
3 CRELYMO, LEOM, CNRS UMR5512, École centrale de Lyon, Ecully, France
4 CRELYMO, LPM, UMR CNRS 5511, INSA de Lyon, Villeurbanne, France
5 Technical University Darmstadt, Darmstadt, Germany
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     title = {InP-based wavelength tunable vertical cavity surface emitting laser structures},
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Isabelle Sagnes; Martin Strassner; Sophie Bouchoule; Jean-Louis Leclerq; Philippe Regreny; Aldrice Bakouboula; Frank Riemenschneider; Peter Meissner. InP-based wavelength tunable vertical cavity surface emitting laser structures. Comptes Rendus. Physique, semiconductor lasers, Volume 4 (2003) no. 6, pp. 675-685. doi : 10.1016/S1631-0705(03)00082-3. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/S1631-0705(03)00082-3/

[1] T.E. Sale Vertical-Cavity Surface-Emitting Lasers, Research Studies Press, Taunton, Sommerset, 1985

[2] H. Li; K. Iga Vertical Cavity Surface Emitting Laser Devices, Springer Ser. Photon., 6, 2002

[3] C. Wilmsen; H. Temkin; L. Coldren Vertical Cavity Surface Emitting Laser Design, Fabrication, Characterization, and Applications, Cambridge Stud. Modern Opt., 2002

[4] F. Koyama; S. Kinoshita; K. Iga Room-temperature continuous wave lasing characteristics of GaAs vertical cavity surface-emitting laser, Appl. Phys. Lett., Volume 55 (1989), pp. 221-222

[5] Y.H. Lee; J.L. Jewell; A. Sherer; S.L. McCall; J.P. Harbison; L.T. Florez Room temperature continuous-wave vertical cavity single quantum well microlaser diodes, Electron. Lett., Volume 25 (1989), pp. 1377-1378

[6] G.M. Yang; M.H. MacDougal; P.D. Dapkus Ultralow threshold current vertical cavity surface-emitting lasers obtained with selective oxidation, Electron. Lett., Volume 31 (1995), pp. 886-888

[7] J.A. Tantun; A. Clark; J.K. Guenter; R.A. Hawthorne; R.H. Johnson Commercialisation of Honeywell's VCSEL Technology, Vertical-Cavity Surface Emitting Lasers IV, SPIE–The International Society for Optical Engineering (K.D. Choquette; C. Lei, eds.) (Proc. SPIE), Volume 3946 (2000), pp. 2-13

[8] S. Rapp; J. Piprek; K. Streubel; J. André; J. Wallin Temperature sensitivity of 1.54 μm vertical-cavity lasers with an InP-based Bragg reflector, IEEE J. Quantum Electron., Volume 33 (1997), pp. 1839-1845

[9] K. Kazmierski; J.P. Debray; R. Madani; I. Sagnes; A. Ougazzaden; N. Bouadma; J. Etrillard; F. Alexandre; M. Quillec +55 °C pulse lasing at 1.56 μm of all-monolithic InGaAlAs-InP vertical cavity lasers, Electron. Lett., Volume 35 (1999), pp. 811-812

[10] J.K. Kim; E. Hall; O. Sjolmund; G. Almuneau; L.A. Coldren Room-temperature electrically pumped multiple-active-region VCSELs with high differential efficiency at 1.55 μm, Electron. Lett., Volume 35 (1999), pp. 1084-1085

[11] O.K. Kwo; B.S. Yoo; J.H. Shin; J.H. Baek; B. Lee Pulse operation and threshold characteristics of 1.55 μm InGaAlAs-InAlAs VCSELs, IEEE Photon. Technol. Lett., Volume 12 (2000), pp. 1132-1134

[12] J. Boucart; C. Starck; F. Gaborit; A. Plais; N. Bouché; E. Derouin; J.C. Remy; J. Bonnet-Gamard; L. Goldstein; C. Fortin; D. Carpentier; P. Salet; F. Brillouet; J. Jacquet Metamorphic DBR and tunnel-junction injection: a CW RT monolithic long-wavelength VCSEL, IEEE J. Selected Topics Quant. Electron., Volume 5 (1999), pp. 520-529

[13] Y. Ohisho; R. Iga; K. Kishi; C. Amano Buried heterostructure long-wavelength vertical-cavity surface emitting laser with InGaAsP/InP-GaAs/AlAs DBRs, Electron. Lett., Volume 36 (2000), p. 3940

[14] W. Yuen; G.S. Li; R.F. Nabiev; J. Boucart; P. Kner; R.J. Stone; D. Zhang; M. Beaudoin; T. Zheng; C. He; K. Yu; M. Jansen; D.P. Worland; C.J. Chang-Hasnain High-performance 1.6 μm single-epitaxy step top-emitting VCSEL, Electron. Lett., Volume 36 (2000), pp. 1121-1123

[15] J.H. Shin; B.S. Yoo; W.S. Han; O.K. Kwon; Y.G. Ju; J.H. Lee CW Operation and Threshold Characteristcs of All-Monolithic InGaAlAs 1.55 μm VCSELs grown by MOCVD, IEEE Photon. Technol. Lett., Volume 14 (2002), pp. 1031-1033

[16] M. Ortsiefer; R. Shau; M. Zigldrum; G. Böhm; F. Köhler; M.C. Amann Submilliamp long-wavelength InP-based vertical-cavity surface-emitting laser with stable linear polarization, Electron. Lett., Volume 36 (2000), pp. 1124-1126

[17] M.C. Larson; J.S. Harris Wide and continuous wavelength tuning in a vertical-cavity surface-emitting laser using a micromachined deformable-membrane mirror, Appl. Phys. Lett., Volume 68 (1996), pp. 891-893

[18] M.S. Wu; E.C. Vail; G.S. Li; W. Yuen; C.J. Chang-Hasnain Tunable micromachined vertical cavity surface emitting laser, Electron. Lett., Volume 31 (1995), pp. 1671-1672

[19] M.Y. Li; W. Yuen; G.S. Li; C.J. Chang-Hasnain Top Emitting micromechanical VCSEL with 31.6 nm tuning range, Photon. Technol. Lett., Volume 10 (1998), pp. 18-20

[20] M.C. Larson; A.R. Massebgale; J.S. Harris Continuously tunable micromachined vertical cavity surface emitting laser with 18 nm wavelength range, Electron. Lett., Volume 32 (1996), pp. 330-332

[21] D. Vakhshoori; P. Tayebati; C.C. Lu; M. Azimi; P. Wang; J.H. Zhou; E. Canoglu 2 mW CW singlemode operation of a tunable 1550 nm vertical cavity surface emitting laser with 50 nm tuning range, Electron. Lett., Volume 35 (1999), pp. 900-901

[22] A. Sbyru; V. Iakovlev; G. Suruceanu; C.A. Berseth; A. Rudra; A. Mircea; A. Mereuta; E. Kapon 1 mW CW 38 nm tunable 1.5 μm VCSELs with tuning voltage below 4 V, 28 the European Conf. On Optical Communications, 2002 (PD3.8)

[23] C.J. Chang-Hasnain Tunable VCSEL, J. Select. Topics Quantum Electron., Volume 6 (2000), pp. 978-987

[24] McLeod Thin Optical Filters, Adam Hilger, Bristol, 1996

[25] I. Sagnes; G. Le Roux; C. Mériadec; A. Mereuta; G. Saint-Girons; M. Bensoussan A new MOCVD InP/AlGaInAs distributed Bragg reflector for 1.55 μm VCSELs, Electron. Lett., Volume 37 (2001), pp. 500-501

[26] K. Streubel; S. Rapp; J. André; N. Chitica Fabication of InP/air-gap distributed Bragg reflectors and micro-cavities, J. Math. Sci. Engrg. B, Volume 44 (1997), pp. 364-367

[27] M. Aziz; J. Pfeifer; M. Wohlfarth; S. Wu; P. Meissner A new and simple concept of tunable two-chip microcavities for filter applications in WDM systems, Photon. Technol. Lett., Volume 12 (2000), pp. 1522-1524

[28] F. Riemenschneider; M. Aziz; H. Halbritter; I. Sagnes; P. Meissner Low-cost electrothermally tunable optical microcavities based on GaAs, Photon. Technol. Lett., Volume 14 (2002), pp. 1566-1568

[29] F. Riemenschneider, I. Sagnes, G. Böhm, H. Halbritter, M. Maute, C. Symonds, M.-C. Amann, P. Meissner, Micro-electro-mechanically tunable two-chip vertical cavity surface emitting laser for long wavelengths, accepted for presentation to European Conference on Lasers and Electro-Optics (CLEO), Munich, Germany, June 2003

[30] M. Strassner; C. Luber; A. Tarraf; C. Chitica Widely tunable-constant bandwith monolithic Fabry–Pérot filter with a stable cavity design for WDM systems, IEEE Photon. Technol. Lett., Volume 14 (2002), pp. 1548-1550

[31] N. Chitica; J. Daleiden; J. Bentell; J. André; M. Strassner; S. Greek; D. Pasquariello; M. Karlsson; R. Gupta; K. Hjort Fabrication of tunable InP/air-gap Fabry–Pérot cavities by selective etching of InGaAs sacrificial layers, Phys. Scripta, Volume 79 (1999), pp. 131-134

[32] W. Strupinski; M. Czub; J. Gaca; M. Wojcik Studies on gas-switching sequences influence on the quality of MOVPE InGaAs/InP superlattice structures, VII IPRM, Schwäbisch Gmünd, Germany, 1996, pp. 504-506

[33] M. Strassner; N. Chitica; A. Tarraf Investigations of growth conditions for InP suited for micro opto electro mechanical systems for data communication, XIV IPRM, Stockholm, Sweden, 2002, pp. 351-354

[34] J.L. Leclercq; P. Regreny; P. Viktorovitch; A. Bakouboula; T. Benyattou; I. Sagnes; G. Saint-Girons; C. Meriadec; A. Mereuta; S. Bouchoule; A. Plais; J. Jacquet Monolithic tunable InP-based vertical cavity surface emitting laser, DTIP '2002 (Proc. SPIE), Volume 4755 (2002), pp. 448-454

[35] E. Hall; S. Nagakawa; G. Almuneau; J.K. Kim; L.A. Coldren Room-temperature, CW operation of lattice-matched long-wavelength VCSELs, Electron. Lett., Volume 2 (2000), pp. 1465-1467

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