GaSb-based mid-infrared 2–5 μm laser diodes

André Joullié; Philippe Christol

doi:10.1016/S1631-0705(03)00098-7

GaSb-based mid-infrared 2–5 μm laser diodes
[Diodes laser à base GaSb pour moyen infrarouge (2–5 μm)]

Présenté par : Guy Laval

André Joullié ¹ ; Philippe Christol ²

¹ Centre d'électronique et de microoptoélectronique de Montpellier (CEM2), UMR CNRS n∘5507, Université de Montpellier II, sciences et techniques du Languedoc, case 067, 34095 Montpellier cedex 05, France
² Laboratoire de physique des matériaux (LPM), faculté des sciences d'Avignon, Université d'Avignon et Pays de Vaucluse, 33, rue Pasteur, 84000 Avignon, France

Comptes Rendus. Physique, Volume 4 (2003) no. 6, pp. 621-637.

Résumé
Abstract

Les diodes laser émettant en continu à température ambiante dans le moyen infrarouge (domaine spectral 2–5 μm) sont réclamées pour des applications telles que la spectroscopie d'absorption par diodes lasers accordables (TDLAS) et le contrôle de l'environnement. Aujourd'hui de tels composants semiconducteurs n'existent pas, à l'exception de diodes laser à puits quantiques de type-I GaInAsSb/AlGaAsSb qui présentent d'excellentes performances à température ambiante, mais uniquement dans le domaine 2.0–2.6 μm. Au delà de 2.6 μm, les lasers à puits quantiques de type-II à GaInAsSb/GaSb, les lasers « W » utilisant le système de type-III InAs/GaInSb, et les lasers à cascade quantique à transitions inter-bandes dans le système InAs/Ga(In)Sb/AlSb, tous élaborés sur substrat GaSb, constituent des filières compétitives pour atteindre l'objectif d'un fonctionnement en continu à température ambiante. Ces différentes technologies sont discutées dans cet article.

Laser diodes emitting at room temperature in continuous wave regime (CW) in the mid-infrared (2–5 μm spectral domain) are needed for applications such as high sensitivity gas analysis by tunable diode laser absorption spectroscopy (TDLAS) and environmental monitoring. Such semiconductor devices do not exist today, with the exception of type-I GaInAsSb/AlGaAsSb quantum well laser diodes which show excellent room temperature performance, but only in the 2.0–2.6 μm wavelength range. Beyond 2.6 μm, type-II GaInAsSb/GaSb QW lasers, type-III ‘W’ InAs/GaInSb lasers, and interband quantum cascade lasers employing the InAs/Ga(In)Sb/AlSb system, all based on GaSb substrate, are competitive technologies to reach the goal of room temperature CW operation. These different technologies are discussed in this paper.

Reçu le : 2003-01-03
Accepté le : 2003-03-15
Publié le : 2003-07-01

DOI : 10.1016/S1631-0705(03)00098-7

Keywords: Laser diodes, Mid infrared, GaSb, Type-I lasers, Type-II lasers, ‘W’ lasers, Quantum cascade lasers
Mot clés : Diodes lasers, Moyen infrarouge, GaSb-Lasers de type-I, Lasers de type-II, Lasers « W », Lasers à cascade quantique

Affiliations des auteurs :

André Joullié ¹ ; Philippe Christol ²

¹ Centre d'électronique et de microoptoélectronique de Montpellier (CEM2), UMR CNRS n∘5507, Université de Montpellier II, sciences et techniques du Languedoc, case 067, 34095 Montpellier cedex 05, France
² Laboratoire de physique des matériaux (LPM), faculté des sciences d'Avignon, Université d'Avignon et Pays de Vaucluse, 33, rue Pasteur, 84000 Avignon, France

@article{CRPHYS_2003__4_6_621_0,
     author = {Andr\'e Joulli\'e and Philippe Christol},
     title = {GaSb-based mid-infrared 2{\textendash}5~\ensuremath{\mu}m laser diodes},
     journal = {Comptes Rendus. Physique},
     pages = {621--637},
     publisher = {Elsevier},
     volume = {4},
     number = {6},
     year = {2003},
     doi = {10.1016/S1631-0705(03)00098-7},
     language = {en},
}

TY  - JOUR
AU  - André Joullié
AU  - Philippe Christol
TI  - GaSb-based mid-infrared 2–5 μm laser diodes
JO  - Comptes Rendus. Physique
PY  - 2003
SP  - 621
EP  - 637
VL  - 4
IS  - 6
PB  - Elsevier
DO  - 10.1016/S1631-0705(03)00098-7
LA  - en
ID  - CRPHYS_2003__4_6_621_0
ER  -

%0 Journal Article
%A André Joullié
%A Philippe Christol
%T GaSb-based mid-infrared 2–5 μm laser diodes
%J Comptes Rendus. Physique
%D 2003
%P 621-637
%V 4
%N 6
%I Elsevier
%R 10.1016/S1631-0705(03)00098-7
%G en
%F CRPHYS_2003__4_6_621_0

André Joullié; Philippe Christol. GaSb-based mid-infrared 2–5 μm laser diodes. Comptes Rendus. Physique, Volume 4 (2003) no. 6, pp. 621-637. doi : 10.1016/S1631-0705(03)00098-7. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/S1631-0705(03)00098-7/

Bibliographie
Cité par

[1] H.A. Gebbie; W.R. Harding; C. Hilsum; A.W. Pryce; V. Roberts Atmospheric transmission in the 1 to 14 μm region, Proc. Roy. Soc. A, Volume 206 (1951), p. 87

[2] L.S. Rothman; R.R. Gamache; H.H. Tipping; C.P. Rinsland; M.A.H. Smith; D.C. Benner; V.M. Devi; J.M. Flaud; C. Camy-Peyret; A. Perrin; A. Goldman; S.T. Massie; L.R. Brown; R.A. Toth The HITRAN molecular data base: editions of 1991 and 1992, J. Quantum Spectrosc. Radiat. Transf., Volume 48 (1992), p. 469

[3] H.I. Schiff; G.I. Mackay; J. Bechara The use of tunable diode laser absorption spectroscopy for atmospheric measurements (M.W. Sigrist, ed.), Air Monitoring by Spectroscopy Techniques, Wiley, New York, 1994

[4] I. Melngailis Maser action in InAs diodes, Appl. Phys. Lett., Volume 2 (1963), pp. 176-178

[5] J. Phelan; A.R. Calawa; R.H. Rediker; R.J. Keyes; B. Lax Infrared InSb laser diodes in high magnetic fields, Appl. Phys. Lett., Volume 3 (1963), pp. 143-145

[6] C.B. Guillaume; P. Lavallard Laser effect in indium antimonide, Solid State Comm., Volume 1 (1963), pp. 148-150

[7] Y. Horikoshi Semiconductor lasers with wavelengths >2 μm (W.T. Tsang, ed.), Semiconductors and Semimetals 22, Academic Press, London, 1985, pp. 93-151 (Chapter 3)

[8] D.L. Partin; C.M. Trush Wavelength coverage of lead-europium-selenide-telluride diode lasers, Appl. Phys. Lett., Volume 45 (1984), pp. 193-195

[9] G. Bauer; M. Kriechbaum; Z. Shi; M. Tacke IV-VI quantum wells for infrared lasers, J. Nonlinear Opt. Phys. Mater., Volume 4 (1995), pp. 283-312

[10] Z. Shi; M. Tacke; A. Lambrecht; H. Böttner Midinfrared lead salt multi-quantum-well diode lasers with 282 K operation, Appl. Phys. Lett., Volume 66 (1995), pp. 2537-2539

[11] M. Tacke Lead salt lasers, Philos. Trans. Roy. Soc. London Ser. A, Volume 359 (2001), pp. 547-566

[12] H. Preir Physics and applications of IV-VI compound semiconductor lasers, Semicond. Sci. Technol., Volume 5 (1990), p. S12-S20

[13] E.P. O'Reilly; A.R. Adams Band structure engineering in strained semiconductor lasers, IEEE J. Quantum Electron., Volume 30 (1994), pp. 366-379

[14] C.R. Ram-Mohan; J.R. Meyer Multiband finite element modelling of wavefunction engineered electro-optical devices, J. Nonlinear Opt. Phys. Mat., Volume 4 (1995), pp. 191-243

[15] D.Z. Garbuzov; H. Lee; V. Khalfin; R. Martinelli; J.C. Connolly; G.L. Belenky 2.3–2.7 μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers, IEEE Photon. Technol. Lett., Volume 11 (1999), pp. 794-796

[16] H.K. Choi; S.J. Eglash High power multiple quantum well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 μm with low threshold current density, Appl. Phys. Lett., Volume 61 (1992), pp. 1154-1156

[17] H.K. Choi; G.W. Turner; S.J. Eglash High-power GaInAsSb-AlGaAsSb multiple quantum well diode lasers emitting at 1.9 μm, IEEE Photon. Technol. Lett., Volume 6 (1994), pp. 7-9

[18] H. Lee; P.K. York; R.J. Menna; R.U. Martinelli; D.Z. Garbuzov; S.Y. Narayan; J.C. Connolly Room temperature 2.78 μm AlGaAsSb/InGaAsSb quantum well lasers, Appl. Phys. Lett., Volume 66 (1995), pp. 1942-1944

[19] A.N. Baranov; N. Bertru; Y. Cuminal; G. Boissier; Y. Rouillard; J.C. Nicolas; P. Grech; A. Joullié; C. Alibert Mid-infrared GaSb-InAs based multiple quantum well lasers, SPIE, Volume 3284 (1998), pp. 247-255

[20] A. Joullié New developments in mid-infrared Sb-based lasers, J. Phys. IV (France), Volume 9 (1999), p. Pr2.79-Pr2.96

[21] D.A. Yarekha; G. Glastre; A. Perona; Y. Rouillard; F. Genty; E.M. Skouri; G. Boissier; P. Grech; A. Joullié; C. Alibert; A.N. Baranov High temperature GaInAsSb/GaAlAsSb quantum well singlemode continuous wave lasers emitting near 2.3 μm, Electron. Lett., Volume 36 (2000), pp. 537-539

[22] D.A. Yarekha; A. Vicet; A. Perona; G. Glastre; B. Fraisse; Y. Rouillard; E.M. Skouri; G. Boissier; P. Grech; A. Joullié; C. Alibert; A.N. Baranov High efficiency GaInAsSb/GaSb type-II quantum well continuous wave lasers, Semicond. Sci. Technol., Volume 15 (2000), pp. 283-288

[23] J.R. Meyer; C.A. Hoffman; F.J. Bartoli; L.R. Ram-Mohan Type-II quantum well lasers for the mid-wavelength infrared, Appl. Phys. Lett., Volume 67 (1995), pp. 757-759

[24] H. Lee; L.J. Olafsen; R.J. Menna; W.W. Bewley; R.U. Martinelli; I. Vurgaftman; D.Z. Garbuzov; C.L. Felix; M. Maiorov; J.R. Meyer; J.C. Connolly; A.R. Stugg; G.H. Olsen Room-temperature type-II quantum well diode laser with broadened waveguide emitting at λ=3.30 μm, Electron. Lett., Volume 35 (1999), pp. 1743-1745

[25] W.W. Bewley; H. Lee; I. Vurgaftman; R.J. Menna; C.L. Felix; R.U. Martinelli; D.W. Stokes; D.Z. Garbuzov; J.R. Meyer; M. Maiorov; J.C. Connolly; A.R. Stugg; G.H. Olsen Continuous-wave operation of λ=3.25 μm broadened-waveguide W quantum-well diode lasers up to T=195 K, Appl. Phys. Lett., Volume 6 (2000), pp. 256-258

[26] B.I. Vurgaftman; C.L. Felix; W.W. Bewley; D.W. Stokes; R.E. Bartolo; J.R. Meyer Mid-infrared ‘W’ lasers, Philos. Trans. Roy. Soc. London Ser. A, Volume 359 (2001), pp. 489-503

[27] J. Faist; F. Capasso; D.L. Sivco; C. Sirtori; A.L. Hutchinson; A.Y. Cho Quantum cascade laser, Science, Volume 264 (1994), pp. 553-556

[28] R. Köhler; C. Gmachl; A. Tredicucci; F. Capasso; D.L. Sivco; S.N. George Chu; A.Y. Cho Single-mode tunable, pulsed, and continuous wave quantum-cascade distributed feedback lasers at λ=4.6–4.7 μm, Appl. Phys. Lett., Volume 76 (2000), pp. 1092-1094

[29] J. Faist; F. Capasso; D.L. Sivco; A.L. Hutchinson; G. Chu Sung-Nee; A.Y. Cho Short wavelength (λ∼3.4 μm) quantum cascade laser based on strain-compensated InGaAs/AlInAs, Appl. Phys. Lett., Volume 72 (1998), pp. 680-682

[30] F. Capasso; C. Gmachl; R. Paiella; A. Tredicucci; A.L. Hutchinson; D.L. Sivco; J.N. Baillargeon; A.Y. Cho; H.C. Liu New frontiers in quantum cascade lasers and applications, IEEE J. Select. Topics Quantum Electron., Volume 6 (2000), pp. 931-947

[31] F.Q. Liu; Y.Z. Zhang; Q.S. Zhang; D. Ding; X. Bo; Z.G. Wang; D.S. Jiang; B.Q. Sun High-performance strain-compensated InGaAs/InAlAs quantum cascade lasers, Semicond. Sci. Technol., Volume 15 (2000), p. L44-L46

[32] F. Capasso, Optics & Photonics News, May 2001, p. 41

[33] B. Ishaug; W.Y. Hwang; J. Um; B. Guo; H. Lee; C.H. Lin Continuous-wave operation of a 5.2 μm quantum-cascade laser up to 210 K, Appl. Phys. Lett., Volume 79 (2001), pp. 1747-1749

[34] R.Q. Yang Infrared lasers based on intersubband transitions in quantum wells, Superlatt. Microstr., Volume 17 (1995), pp. 77-83

[35] R.Q. Yang; J.D. Bruno; J.L. Bradshaw; J.T. Pham; D.E. Wortman High-power interband cascade lasers with quantum efficiency >450%, Electron. Lett., Volume 35 (1999), pp. 1254-1255

[36] R.Q. Yang; J.D. Bruno; J.L. Bradshaw; J.T. Pham; D.E. Wortman Interband cascade lasers: progress and challenges, Physica E, Volume 7 (2000), pp. 69-75

[37] D.H. Chow; R.H. Miles; T.C. Hasenberg; A.R. Kost; Y.H. Zhang; H.L. Dunlap; L. West Midwave infrared diode lasers based on GaSb/InAs and InAs/AlSb superlattices, Appl. Phys. Lett., Volume 67 (1995), pp. 3700-3702

[38] D.Z. Garbuzov; R.U. Martinelli; H. Lee; P.K. York; R.J. Menna; J.C. Connolly; S.Y. Narayan Ultra low-loss broadened-waveguide high-power 2 μm AlGaAsSb/InGaAsSb/GaSb separate-confinement quantum-well lasers, Appl. Phys. Lett., Volume 69 (1996), pp. 2006-2008

[39] M.P. Krijn Heterojunction band offsets and effective masses in III-V quaternary alloys, Semicond. Sci. Technol., Volume 6 (1991), pp. 27-31

[40] P. Christol; P. Bigenwald; A. Joullié; Y. Cuminal; A.N. Baranov; N. Bertru; Y. Rouillard Improvement of Sb-based multiquantum well lasers by Coulomb enhancement, IEE Proc.-Optoelectron., Volume 146 (1999), pp. 3-8

[41] Y. Tsou; A. Ichii; E.M. Garmire Improving InAs double heterostructure lasers with better confinement, IEEE J. Quantum Electron., Volume 28 (1992), pp. 1261-1268

[42] Z. Feit; M. Mc Donald; R.J. Woods; V. Archambault; P. Mak Low threshold PbEuSeTe/PbTe separate confinement buried heterostructure diode lasers, Appl. Phys. Lett., Volume 68 (1996), pp. 738-740

[43] D. Garbuzov; R.U. Martinelli; H. Lee; R.J. Menna; P.K. York; L.A. DiMarko; M.G. Harvey; R.J. Matarese; S.Y. Narayan; J.C. Connolly 4W quasi-continuous-wave output power from 2 μm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes, Appl. Phys. Lett., Volume 70 (1997), pp. 2931-2933

[44] R.J. Menna; D.Z. Garbuzov; H. Lee; R.U. Martinelli; S.J. Narayan; J.C. Connolly High power broadened-waveguide InGaAsSb/AlGaAsSb quantum-well diode lasers emitting at 2 μm, SPIE Proc., Volume 3284 (1998), pp. 238-246

[45] M. Garcia, A. Sahli, C. Becker, A. Pérona, Y. Rouillard, C. Sirtori, X. Marcadet, Low threshold high power efficiency room temperature continuous wave operation diode laser emitting at 2.26 μm, submitted

[46] J.G. Kim; L. Shterengas; R.U. Martinelli; G.L. Belenky; D.Z. Garbuzov; W.K. Chan Room temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1W continuous waves, Appl. Phys. Lett., Volume 81 (2002), pp. 3146-3148

[47] H.K. Choi; G.W. Turner; M.J. Manfra; H.K. Choi; G.W. Turner; M.J. Manfra; M.K. Connors High CW power (>200 mW/facet) at 3.4 μm from InAsSb/InAlAsSb strained quantum well diode lasers, Electron. Lett., Volume 32 (1996), pp. 1296-1297 (See also 175 K continuous wave operation of InAsSb/InAlAsSb quantum well diode lasers emitting at 3.5 μm Appl. Phys. Lett., 68, 1996, pp. 2936-2938)

[48] J.D. Bruno; J.L. Bradshaw; R.Q. Yang; J.T. Pham; D.E. Wortman Low threshold interband cascade lasers with power efficiency exceeding 9%, Appl. Phys. Lett., Volume 76 (2000), pp. 3167-3169

[49] G.P. Agrawal; N.K. Dutta Long Wavelength Semiconductor Lasers (S. Mitra, ed.), Van Nostrand–Reinhold, New York, 1986

[50] B.K. Ridley Quantum Processes in Semiconductors, Clarendon Press, Oxford, 1988

[51] E. Rosencher; B. Vinter Optoélectronique, Masson, Paris, 1998 (pp. 265–271)

[52] A. Haug Auger recombination in quantum well semiconductors: calculation with realistic energy bands, Semicond. Sci. Technol., Volume 7 (1992), pp. 1337-1340

[53] H.Y. Fan (O. Willardson; O. Beer, eds.), Semiconductors and Semimetals, 3, Academic Press, New York, 1967 (Chapter 9)

[54] C.H. Grein; P.M. Young; H. Ehrenreich Theoretical performance of InAs/In_xGa_1−xSb superlattice-based midwave infrared lasers, J. Appl. Phys., Volume 76 (1994), pp. 1940-1942

[55] G.G. Zegrya; A.D. Andreev Mechanism of suppression of Auger recombination processes in type-II heterostructures, Appl. Phys. Lett., Volume 67 (1995), pp. 2681-2683

[56] J.I. Malin; J.R. Meyer; C.L. Felix Type-II mid-IR lasers operating at room temperature, Appl. Phys. Lett., Volume 68 (1996), pp. 2976-2978

[57] J.R. Meyer; C.L. Felix; W.W. Bewley et al. Auger coefficients in type-II InAs/Ga_1−xIn_xSb quantum wells, Appl. Phys. Lett., Volume 73 (1998), pp. 2857-2859

[58] J.L. Pautrat Optoélectronique (E. Rosencher; B. Vinter, eds.), Masson, Paris, 1998, p. 234 (reported)

[59] A. Haug; D. Kerkhoff; W. Lochmann Calculation of Auger coefficients for III-V compounds with emphasis on GaSb, Phys. Status Solidi B, Volume 89 (1978), pp. 357-365

[60] A.R. Adams Band structure engineering for low threshold high efficiency semiconductor lasers, Electron. Lett., Volume 22 (1986), pp. 249-250

[61] A. Vicet; D.A. Yarekha; A. Perona; Y. Rouillard; S. Gaillard; A.N. Baranov Trace gas detection with antimonide-based quantum-well diode lasers, Spectrochim. Acta Part A, Volume 58 (2002), pp. 2405-2412

[62] J.L. Lazzari; E. Tournié; F. Pitard; A. Joullié; B. Lambert Growth limitations by the miscibility gap in the liquid phase epitaxy of Ga_1−xIn_xAs_ySb_1−y on GaSb, Mater. Sci. Engrg. B, Volume 9 (1991), pp. 125-128

[63] A.N. Baranov; Y. Cuminal; N. Bertru; C. Alibert; A. Joullié Strained multiple quantum well lasers grown on GaSb emitting between 2 and 2.4 μm, SPIE, Volume 2997 (1997), pp. 2-13

[64] A.N. Baranov; Y. Cuminal; G. Boissier; C. Alibert; A. Joullié Low-threshold laser diodes based on type-II GaInAsSb/GaSb quantum-wells operating at 2.36 μm at room temperature, Electron. Lett., Volume 32 (1996), pp. 2279-2280

[65] N. Bertru; A.N. Baranov; Y. Cuminal; G. Almuneau; F. Genty; A. Joullie; O. Brandt; A. Mazuelas; K.H. Ploog Long-wavelength (Ga, In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy, Semicond. Sci. Technol., Volume 13 (1998), pp. 936-940

[66] Y. Cuminal; A.N. Baranov; D. Bec; P. Grech; M. Garcia; G. Boissier; A. Joullié; G. Glastre; R. Blondeau Room-temperature 2.63 μm GaInAsSb/GaSb strained quantum-well laser diodes, Semicond. Sci. Technol., Volume 14 (1999), pp. 283-288

[67] A. Joullié; G. Glastre; R. Blondeau; J.C. Nicolas; Y. Cuminal; A.N. Baranov; A. Wilk; M. Garcia; P. Grech; C. Alibert Continuous-wave operation of GaInAsSb-GaSb type-II quantum-well ridge lasers, IEEE J. Select. Topics Quantum Electron., Volume 5 (1999), pp. 711-715

[68] D. Wu; B. Lane; H. Mohseni; J. Diaz; M. Razeghi High power asymmetrical InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3.4 μm, Appl. Phys. Lett., Volume 74 (1999), pp. 1194-1196

[69] A. Popov; V. Sherstnev; Y. Yakovlev; R. Mücke; P. Werle High power InAsSb/InAsSbP double heterostructure laser for continuous wave operation at 3.6 μm, Appl. Phys. Lett., Volume 68 (1996), pp. 2790-2792 (See also SPIE, 3001, 1997, pp. 344-355)

[70] H.K. Choi; S.J. Eglash; G.W. Turner Double heterostructure diode lasers emitting at 3 μm with a metastable GaInAsSb active layer and AlGaAsSb cladding layers, Appl. Phys. Lett., Volume 64 (1994), pp. 2474-2476

[71] Y.H. Zhang Continuous wave operation of InAs/InAs_xSb_1−x mid-infrared lasers, Appl. Phys. Lett., Volume 66 (1995), pp. 118-120

[72] S.R. Kurtz; R.M. Biefeld; A.A. Allerman; A.J. Howard; M.H. Crawford Pseudomorphic InAsSb multiple quantum well InAsSb lasers emitting at 3.6 μm grown by metal organic chemical vapour deposition, Appl. Phys. Lett., Volume 68 (1996), pp. 1332-1334

[73] B. Lane; D. Wu; A. Rybaltowski; J. Diaz; M. Razeghi Compressively strained multiple quantum well InAsSb lasers emitting at 3.6 μm grown by metal-organic chemical vapor deposition, Appl. Phys. Lett., Volume 70 (1997), pp. 443-445

[74] G.W. Turner; M.J. Manfra; H.K. Choi; M.K. Connors MBE growth of high power InAsSb/InAlAsSb quantum-well diode lasers emitting at 3.5 μm, J. Crystal Growth, Volume 175/176 (1997), pp. 825-832

[75] R.M. Biefeld; S.R. Kurtz; A.A. Allerman The metal-organic chemical vapor deposition growth and properties of InAsSb mid-infrared (3–6 μm) lasers and LED's, IEEE J. Select. Topics Quantum Electron., Volume 3 (1997), pp. 739-748

[76] B. Lane; Z. Wu; A. Stein; J. Diaz; M. Razeghi InAsSb/InAsP strained-layer superlattice injection lasers operating at 4.0 μm grown by metal-organic chemical vapor deposition, Appl. Phys. Lett., Volume 74 (1999), pp. 3438-3440

[77] T. Ashley; C.T. Elliott; R. Jefferies; A.D. Johnson; G.J. Pryce; A.M. White; M. Carroll Mid-infrared In_1−xAl_xSb/InSb heterostructure diode lasers, Appl. Phys. Lett., Volume 70 (1997), pp. 931-933

[78] W.W. Bewley; I. Vurgaftman; C.L. Felix; J.R. Meyer; C.H. Lin; D. Zhang; S.J. Murry; S.S. Pei; L.R. Ram-Mohan Role of internal loss in limiting type-II mid-IR laser performance, J. Appl. Phys., Volume 83 (1998), pp. 2384-2391

[79] P. Christol; M. El Gazouli; P. Bigenwald; A. Joullié InAs/InAs(PSb) quantum-well laser structure for the midwavelength infrared region, Physica E, Volume 14 (2002), pp. 375-384

[80] C. Becker; I. Prevot; X. Marcadet; B. Vinter; C. Sirtori InAs/AlSb quantum-cascade light-emitting devices in the 3–5 μm wavelength region, Appl. Phys. Lett., Volume 76 (2001), pp. 1029-1031

[81] C. Becker; H. Page; M. Calligaro; V. Ortiz; M. Garcia; X. Marcadet; C. Sirtori GaAs- and GaSb-based quantum cascade lasers: the challenge of the new materials, 5th Int. Conf. Mid-Infrared Optoelectronics Materials and Devices (MIOMD-5), Annapolis, MA, 8–11 September 2002

[82] R.Q. Yang; S.S. Pei Novel type-II quantum cascade lasers, J. Appl. Phys., Volume 79 (1996), pp. 8197-8203

[83] J.R. Meyer; I. Vurgaftman; R.Q. Yang; L.R. Ram-Moham Type-II and type-I interband cascade lasers, Electron. Lett., Volume 32 (1996), pp. 45-46

[84] R.Q. Yang; C.H. Lin; P.C. Chang; S.J. Murry; D. Zhang; S.S. Pei; S.R. Kurtz; A.N. Chu; F. Ren Mid-IR interband cascade electroluminescence in type-II quantum wells, Electron. Lett., Volume 32 (1996), pp. 1621-1622

[85] C.H. Lin; R.Q. Yang; D. Zhang; S.J. Murry; S.S. Pei; A.A. Allerman; S.R. Kurtz Type-II interband quantum cascade laser at 3.8 μm, Electron. Lett., Volume 33 (1997), pp. 598-599

[86] R.Q. Yang; B.H. Yang; D. Zhang; C.H. Lin; S.J. Murry; H. Wu; S.S. Pei High power mid-infrared interband cascade laser based on type-II quantum wells, Appl. Phys. Lett., Volume 71 (1997), pp. 2409-2411

[87] B.H. Yang; D. Zhang; R.Q. Yang; C.H. Lin; S.J. Murry; S.S. Pei Mid-infrared interband cascade lasers with quantum efficiencies >200%, Appl. Phys. Lett., Volume 72 (1998), pp. 2220-2222

[88] R.Q. Yang Mid infrared interband cascade lasers based on type-II heterostructures, Microelectron. J., Volume 30 (1999), pp. 1043-1056

[89] J.L. Bradshaw; R.Q. Yang; J.D. Bruno; J.T. Pham; D.E. Wortman High efficiency interband cascade lasers with peak power exceeding 4W/facet, Appl. Phys. Lett., Volume 75 (1999), pp. 2362-2364

[90] C.L. Felix; W.W. Bewley; I. Vurgaftman; J.R. Meyer; D. Zhang; C.H. Lin; R.Q. Yang; S.S. Pei Interband cascade laser emitting >1 photon per injected electron, IEEE Photonics Technol. Lett., Volume 9 (1997), pp. 1433-1435

[91] L.J. Olafsen; E.H. Aifer; I. Vurgaftman; W.W. Bewley; C.L. Felix; J.R. Meyer; D. Zhang; C.H. Lin; S.S. Pei Near room temperature mid infrared interband cascade laser, Appl. Phys. Lett., Volume 72 (1998), pp. 2370-2372

[92] R.Q. Yang; C.H. Lin; B.H. Yang et al. Type-II quantum cascade lasers, Proc. SPIE, Volume 3284 (1998), pp. 308-317

[93] R.Q. Yang; J.L. Bradshaw; J.D. Bruno; J.T. Pham; D.E. Wortman; R.L. Tober Room temperature type-II interband cascade laser, Appl. Phys. Lett., Volume 81 (2002), pp. 397-399

[94] A. Perona, Réalisation par MBE et caractérisation physique de diodes lasers à puits quantiques GaInAsSb/AlGaAsSb émettant vers 2,3 μm, Thesis, Montpellier-II University, Montpellier (F), October 2002

Cité par Sources :

Commentaires - Politique