GaSb-based mid-infrared 2–5 μm laser diodes

André Joullié; Philippe Christol

doi:10.1016/S1631-0705(03)00098-7

GaSb-based mid-infrared 2–5 μm laser diodes
[Diodes laser à base GaSb pour moyen infrarouge (2–5 μm)]

Présenté par : Guy Laval

André Joullié ¹ ; Philippe Christol ²

¹ Centre d'électronique et de microoptoélectronique de Montpellier (CEM2), UMR CNRS n∘5507, Université de Montpellier II, sciences et techniques du Languedoc, case 067, 34095 Montpellier cedex 05, France
² Laboratoire de physique des matériaux (LPM), faculté des sciences d'Avignon, Université d'Avignon et Pays de Vaucluse, 33, rue Pasteur, 84000 Avignon, France

Comptes Rendus. Physique, semiconductor lasers, Volume 4 (2003) no. 6, pp. 621-637.

Résumé
Abstract

Les diodes laser émettant en continu à température ambiante dans le moyen infrarouge (domaine spectral 2–5 μm) sont réclamées pour des applications telles que la spectroscopie d'absorption par diodes lasers accordables (TDLAS) et le contrôle de l'environnement. Aujourd'hui de tels composants semiconducteurs n'existent pas, à l'exception de diodes laser à puits quantiques de type-I GaInAsSb/AlGaAsSb qui présentent d'excellentes performances à température ambiante, mais uniquement dans le domaine 2.0–2.6 μm. Au delà de 2.6 μm, les lasers à puits quantiques de type-II à GaInAsSb/GaSb, les lasers « W » utilisant le système de type-III InAs/GaInSb, et les lasers à cascade quantique à transitions inter-bandes dans le système InAs/Ga(In)Sb/AlSb, tous élaborés sur substrat GaSb, constituent des filières compétitives pour atteindre l'objectif d'un fonctionnement en continu à température ambiante. Ces différentes technologies sont discutées dans cet article.

Laser diodes emitting at room temperature in continuous wave regime (CW) in the mid-infrared (2–5 μm spectral domain) are needed for applications such as high sensitivity gas analysis by tunable diode laser absorption spectroscopy (TDLAS) and environmental monitoring. Such semiconductor devices do not exist today, with the exception of type-I GaInAsSb/AlGaAsSb quantum well laser diodes which show excellent room temperature performance, but only in the 2.0–2.6 μm wavelength range. Beyond 2.6 μm, type-II GaInAsSb/GaSb QW lasers, type-III ‘W’ InAs/GaInSb lasers, and interband quantum cascade lasers employing the InAs/Ga(In)Sb/AlSb system, all based on GaSb substrate, are competitive technologies to reach the goal of room temperature CW operation. These different technologies are discussed in this paper.

Reçu le : 2003-01-03
Accepté le : 2003-03-15
Publié le : 2003-07-01

DOI : 10.1016/S1631-0705(03)00098-7

Keywords: Laser diodes, Mid infrared, GaSb, Type-I lasers, Type-II lasers, ‘W’ lasers, Quantum cascade lasers
Mots-clés : Diodes lasers, Moyen infrarouge, GaSb-Lasers de type-I, Lasers de type-II, Lasers « W », Lasers à cascade quantique

Affiliations des auteurs :

André Joullié ¹ ; Philippe Christol ²

¹ Centre d'électronique et de microoptoélectronique de Montpellier (CEM2), UMR CNRS n∘5507, Université de Montpellier II, sciences et techniques du Languedoc, case 067, 34095 Montpellier cedex 05, France
² Laboratoire de physique des matériaux (LPM), faculté des sciences d'Avignon, Université d'Avignon et Pays de Vaucluse, 33, rue Pasteur, 84000 Avignon, France

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André Joullié; Philippe Christol. GaSb-based mid-infrared 2–5 μm laser diodes. Comptes Rendus. Physique, semiconductor lasers, Volume 4 (2003) no. 6, pp. 621-637. doi : 10.1016/S1631-0705(03)00098-7. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/S1631-0705(03)00098-7/

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