Nous avons assisté ces dernières années à un progrès décisif dans la performance des lasers à boı̂te quantique, qui leur a ouvert tout un champ d'applications nouvelles. Les progrès récents dans la compréhension et la réalisation des lasers à boı̂te quantique sont passés en revue.
Within the last few years a breakthrough in the device performance of quantum dot lasers occurred and new application areas were opened. Recent advances in the understanding and realisation of quantum dot lasers are reviewed.
@article{CRPHYS_2003__4_6_611_0, author = {Johann Peter Reithmaier and Alfred Forchel}, title = {Recent advances in semiconductor quantum-dot lasers}, journal = {Comptes Rendus. Physique}, pages = {611--619}, publisher = {Elsevier}, volume = {4}, number = {6}, year = {2003}, doi = {10.1016/S1631-0705(03)00075-6}, language = {en}, }
Johann Peter Reithmaier; Alfred Forchel. Recent advances in semiconductor quantum-dot lasers. Comptes Rendus. Physique, Volume 4 (2003) no. 6, pp. 611-619. doi : 10.1016/S1631-0705(03)00075-6. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/S1631-0705(03)00075-6/
[1] Multidimensional quantum well laser and temperature dependence of its threshold current, Appl. Phys. Lett., Volume 40 (1982), pp. 939-941
[2] Gain and the threshold of three dimensional quantum-box lasers, IEEE J. Quantum Electron., Volume 22 (1986), pp. 1915-1921
[3] Low-threshold injection lasers based on vertically coupled quantum dots, J. Crystal Growth, Volume 175 (1997), pp. 689-695
[4] 1.3 μm room-temperature GaAs-based quantum dot laser, Appl. Phys. Lett., Volume 73 (1998), pp. 2564-2566
[5] Optical characteristics of 1.24 μm InAs quantum dot laser diodes, IEEE Photon. Technol. Lett., Volume 11 (1999), pp. 931-933
[6] Low-threshold current density 1.3 μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure, IEEE Photon. Technol. Lett., Volume 12 (2000), pp. 591-593
[7] 1.3 μm GaAs-based laser using quantum dots obtained by activated spinodal decomposition, Electron. Lett., Volume 35 (1999), pp. 898-899
[8] High-performance GaInAs/GaAs quantum-dot lasers based on a single active layer, Appl. Phys. Lett., Volume 74 (1999), pp. 2915-2917
[9] InGaAs quantum dot lasers with submilliamp thresholds and ultra-low threshold current density below room temperature, Electron. Lett., Volume 36 (2000), pp. 1283-1284
[10] Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well, Electron. Lett., Volume 35 (1999), pp. 1163-1165
[11] Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers, Appl. Phys. Lett., Volume 77 (2000), pp. 1419-1421
[12] High performance 980 nm quantum dot lasers for high power applications, Electron. Lett., Volume 37 (2001), pp. 353-354
[13] Progress in Quantum Dot Lasers: 1100 nm, 1300 nm, and high power applications, Japan J. Appl. Phys., Volume 39 (2000), pp. 2341-2343
[14] Low-threshold continuous-wave two-stack quantum-dot laser with reduced temperature sensitivity, IEEE Photon. Technol. Lett., Volume 12 (2000), pp. 1120-1122
[15] 1.3 μm CW lasing characteristics of self-assembled InGaAs–GaAs quantum dots, IEEE J. Quant. Electron., Volume 36 (2000), p. 472
[16] InGaAs/AlGaAs quantum dot DFB lasers operating up to 213 °C, Electron. Lett., Volume 35 (1999), pp. 2036-2037
[17] Gain and linewidth enhancement factor in InAs quantum-dot laser diodes, IEEE Photon. Technol. Lett., Volume 11 (1999), pp. 1527-1529
[18] Low chirp observed in directly modulated quantum dot lasers, IEEE Photon. Technol. Lett., Volume 10 (2000), pp. 1298-1300
[19] High performance 1.3 μm quantum-dot lasers, Japan J. Appl. Phys., Volume 41 (2002), pp. 1158-1161
[20] High-power GaInAs/(Al)GaAs quantum dot lasers with optimised waveguide design for high brightness applications, Int. Semicond. Laser Conf., Garmisch-Partenkirchen, Germany, September, 2002
[21] Correlation between the gain profile and the temperature-induced wavelength-shift of quantum dot lasers, Appl. Phys. Lett., Volume 81 (2002) no. 2, pp. 217-219
[22] 980 nm quantum dot lasers for high power applications, Optoelectronics, 2002, Symposium on Novel In-Plane Semiconductor Lasers VI (OE13), Part of Photonics West, San Jose, CA, USA, January 2002 (SPIE Proc.), Volume 4651 (2002), pp. 294-304
[23] Long wavelength InP based quantum dot lasers, IEEE Photon. Technol. Lett., Volume 14 (2002), pp. 735-737
[24] Performance and physics of quantum-dot lasers with self-assembled columnar-shaped and 1.3 μm emitting InGaAs quantum dots, IEEE J. Sel. Top. Quant. Electron., Volume 6 (2000) no. 3, pp. 462-474
[25] Homogeneous linewidth broadening in a In0.5 Ga0.5As/GaAs single quantum dot at room temperature investigated using a highly sensitive near-field scanning optical microscope, Phys. Rev. B, Volume 63 (2001), p. 121304
[26] Dynamic characteristics of high-speed In0.4Ga0.6As/GaAs self-organized quantum dot lasers at room temperature, Appl. Phys. Lett., Volume 81 (2002), p. 3055
[27] Filamentation and linewidth enhancement factor in InGaAs quantum dot lasers, Appl. Phys. Lett., Volume 81 (2002), p. 3251
[28] Efficient carrier relaxation mechanism in InGaAs/GaAs self-assembled quantum dots based on the existence of continuum states, Phys. Rev. Lett., Volume 82 (1999), p. 4114
[29] Efficient quantum well to quantum dot tunnelling: Analytical solutions, Appl. Phys. Lett., Volume 80 (2002), p. 1270
[30] 1.3 μm InAs quantum dot laser with T0=161 K from 0 to 80 °C, Appl. Phys. Lett., Volume 80 (2002), p. 3277
[31] The role of p-doping and the density of states on the modulation response of quantum dot lasers, Appl. Phys. Lett., Volume 80 (2002), p. 2758
[32] Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices, IEEE Photon. Technol. Lett., Volume 13 (2001), p. 541
[33] Nonlinear gain dynamics in quantum-dot optical amplifiers and its application to optical communication devices, IEEE J. Quant. Electron., Volume 37 (2001), p. 1059
[34] Pattern-effect-free semiconductor optical amplifier achieved using quantum dots, Electron. Lett., Volume 38 (2002), p. 1139
[35] High temperature operating 1.3 μm quantum-dot lasers for telecommunication applications, IEEE Photon. Technol. Lett., Volume 13 (2001), pp. 764-766
[36] Improved performance of MBE grown quantum-dot lasers with asymmetric dots in a well design emitting near 1.3 μm, J. Crystal Growth, Volume 251 (2003), pp. 742-747
[37] Room-temperature operation of InAs quantum-dash lasers on InP (001), IEEE Photon. Technol. Lett., Volume 13 (2001), pp. 767-769
[38] Epitaxial growth of 1.55 μm emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applications, J. Crystal Growth, Volume 251 (2003), pp. 248-252
[39] InAs/InP 1550 nm quantum dash semiconductor optical amplifiers, Electron. Lett., Volume 38 (2002) no. 22, pp. 1350-1351
Cité par Sources :
Commentaires - Politique
Slow and fast light in quantum dot based semiconductor optical amplifiers
Anthony Martinez; J.-G. Provost; Guy Aubin; ...
C. R. Phys (2009)
Two-dimensional photonic crystals: new feasible confined optical systems
Henri Benisty; Maxime Rattier; Ségolène Olivier
C. R. Phys (2002)
Cavity QED effects with single quantum dots
Antonio Badolato; Martin Winger; Kevin J. Hennessy; ...
C. R. Phys (2008)