Comptes Rendus
HgCdTe technology in France
[La filière HgCdTe en France]
Comptes Rendus. Physique, Volume 4 (2003) no. 10, pp. 1121-1131.

SOFRADIR se situe au premier rang mondial pour la production de détecteurs InfraRouge (IR) dits de seconde génération. Ce succès est dû à la qualité exceptionnelle de la technologie française basée sur le matériau HgCdTe. Cette technologie permet la production de détecteurs plans focaux constitués d'un circuit de détection en HgCdTe et d'un circuit de lecture/multiplexage qui, bénéficiant des progrès des technologies silicium, est aujourd'hui réalisé en technologie CMOS. Cette technologie et ses principaux produits sont présentés dans cet article. Enfin, pour répondre aux besoins des futurs systèmes IR, SOFRADIR avec CEA-LETI/LIR préparent la troisième génération de détecteurs IR toujours basés sur HgCdTe mais fabriqués par épitaxie par jets moléculaire.

SOFRADIR is one of the leading companies worldwide for the production of second generation InfraRed (IR) detectors. This success is due to the top level quality of the unique and production oriented French HgCdTe technology for manufacturing IR focal plane arrays based on an HgCdTe array and a CMOS readout and multiplexed silicon array. This technology and main products are presented in this paper. Finally, in order to prepare for future military and industrial needs, SOFRADIR has been working in close relationship with CEA-LETI/LIR on third generation developments based on HgCdTe material using Molecular Beam Epitaxy (MBE) growth.

Publié le :
DOI : 10.1016/j.crhy.2003.10.018
Keywords: Infrared detector, HgCdTe, Focal plane array, IRFPA, IRCMOS, SOFRADIR
Mot clés : Détecteur infrarouge, HgCdTe, Plan focal, IRFPA, IRCMOS, SOFRADIR

Philippe Tribolet 1

1 SOFRADIR, 43–47, rue Camille Pelletan, 92290 Châtenay-Malabry, France
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Philippe Tribolet. HgCdTe technology in France. Comptes Rendus. Physique, Volume 4 (2003) no. 10, pp. 1121-1131. doi : 10.1016/j.crhy.2003.10.018. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/j.crhy.2003.10.018/

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