Three-dimensional stacking of self-assembled quantum dots in multilayer structures

Gunther Springholz

doi:10.1016/j.crhy.2004.11.001

Three-dimensional stacking of self-assembled quantum dots in multilayer structures
[Empilements tridimensionnels en multicouches de boîtes quantiques auto-assemblées]

Présenté par : Guy Laval

Gunther Springholz ¹

¹ Institut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität Linz, A-4040 Linz, Austria

Comptes Rendus. Physique, Volume 6 (2005) no. 1, pp. 89-103.

Résumé
Abstract

L'auto-organisation tri-dimensionnelle d'îlots de matériaux semi-conducteurs par dépôt de multicouches permet de modifier substantiellement les propriétés des boîtes quantiques. Ces empilements peuvent résulter de plusieurs phénomènes (i) les déformations élastiques de la matrice résultant des contraintes liées aux boîtes (ii) des effets topographiques liés à la corrugation de la surface libre de la matrice (iii) une modulation chimique de la matrice. Ces trois effets peuvent conduire à un alignement vertical des boîtes en structures colonnaires, ou à des empilements inclinés, selon les mécanismes en jeu. En particulier, dans le cas des interactions élastiques les paramètres pertinents sont l'orientation de la surface, l'éventuelle anisotropie des propriétés élastiques de la matrice, la taille des boîtes et l'épaisseur de la matrice entre deux couches de boîtes. Des transitions entre différents types d'empilement peuvent ainsi être obtenues en jouant sur l'épaisseur des couches de matrice ou sur les conditions de croissance. La large palette d'effets mis en jeu devrait permettre la synthèse de nouveaux types de super-réseaux de boîtes, présentant des propriétés originales.

Three-dimensional stacking of semiconductor nano-islands in multilayers or superlattice structures provides a powerful tool for controlling the properties of self-assembled quantum dots. These stackings can be caused by several different mechanisms based on: (i) elastic interactions due to the strain fields of the buried dots; (ii) morphological interactions due to nonplanarized spacer topographies; or (iii) interactions based on chemical composition modulations within the spacer material. All three interactions may give rise to a vertical dot alignment in columns as well as to oblique or staggered dot stackings, depending on the details of the interaction mechanisms. For the interlayer correlations mediated by the elastic strain fields, the elastic anisotropy and surface orientation, but also the dot sizes and spacer layer thicknesses play a crucial role. As a result, transitions between different types of dot stackings can be induced as a function of spacer layer thicknesses and growth parameters. The large range of parameters involved in interlayer correlation formation may allow the controlled synthesis of new types of ordered structures with novel properties.

Publié le : 2005-01-01

DOI : 10.1016/j.crhy.2004.11.001

Keywords: Quantum dots, Stranski–Krastanow growth mode, Self-organization, Superlattices, Molecular beam epitaxy, Self-assembly
Mot clés : Boîtes quantiques, Croissance Stranski–Krastanow, Auto-organisation, Super-réseaux, Croissance par jets moléculaires, Auto-assemblage

Affiliations des auteurs :

Gunther Springholz ¹

¹ Institut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität Linz, A-4040 Linz, Austria

@article{CRPHYS_2005__6_1_89_0,
     author = {Gunther Springholz},
     title = {Three-dimensional stacking of self-assembled quantum dots in multilayer structures},
     journal = {Comptes Rendus. Physique},
     pages = {89--103},
     publisher = {Elsevier},
     volume = {6},
     number = {1},
     year = {2005},
     doi = {10.1016/j.crhy.2004.11.001},
     language = {en},
}

TY  - JOUR
AU  - Gunther Springholz
TI  - Three-dimensional stacking of self-assembled quantum dots in multilayer structures
JO  - Comptes Rendus. Physique
PY  - 2005
SP  - 89
EP  - 103
VL  - 6
IS  - 1
PB  - Elsevier
DO  - 10.1016/j.crhy.2004.11.001
LA  - en
ID  - CRPHYS_2005__6_1_89_0
ER  -

%0 Journal Article
%A Gunther Springholz
%T Three-dimensional stacking of self-assembled quantum dots in multilayer structures
%J Comptes Rendus. Physique
%D 2005
%P 89-103
%V 6
%N 1
%I Elsevier
%R 10.1016/j.crhy.2004.11.001
%G en
%F CRPHYS_2005__6_1_89_0

Gunther Springholz. Three-dimensional stacking of self-assembled quantum dots in multilayer structures. Comptes Rendus. Physique, Volume 6 (2005) no. 1, pp. 89-103. doi : 10.1016/j.crhy.2004.11.001. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/j.crhy.2004.11.001/

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