[Effet du champ magnétique sur la longueur de localisation dans n-type CuInSe2]
La conduction par saut à distance variable de type Mott où la magnétorsistance suit la relation
Variable range hopping conduction of the Mott type, where the magnetoresistance follows the relation
Accepté le :
Publié le :
Mots-clés : Semi-conducteur, Saut à distance variable, Magnétorsistance
Lahcen Essaleh 1 ; Syed M. Wasim 2 ; Jean Galibert 3
@article{CRPHYS_2007__8_7-8_942_0, author = {Lahcen Essaleh and Syed M. Wasim and Jean Galibert}, title = {Effect of the high magnetic field on the localization length in n-type {Cooper} {Indium} diselenide}, journal = {Comptes Rendus. Physique}, pages = {942--947}, publisher = {Elsevier}, volume = {8}, number = {7-8}, year = {2007}, doi = {10.1016/j.crhy.2007.07.001}, language = {en}, }
TY - JOUR AU - Lahcen Essaleh AU - Syed M. Wasim AU - Jean Galibert TI - Effect of the high magnetic field on the localization length in n-type Cooper Indium diselenide JO - Comptes Rendus. Physique PY - 2007 SP - 942 EP - 947 VL - 8 IS - 7-8 PB - Elsevier DO - 10.1016/j.crhy.2007.07.001 LA - en ID - CRPHYS_2007__8_7-8_942_0 ER -
%0 Journal Article %A Lahcen Essaleh %A Syed M. Wasim %A Jean Galibert %T Effect of the high magnetic field on the localization length in n-type Cooper Indium diselenide %J Comptes Rendus. Physique %D 2007 %P 942-947 %V 8 %N 7-8 %I Elsevier %R 10.1016/j.crhy.2007.07.001 %G en %F CRPHYS_2007__8_7-8_942_0
Lahcen Essaleh; Syed M. Wasim; Jean Galibert. Effect of the high magnetic field on the localization length in n-type Cooper Indium diselenide. Comptes Rendus. Physique, Neutron scattering: a comprehensive tool for condensed matter research, Volume 8 (2007) no. 7-8, pp. 942-947. doi : 10.1016/j.crhy.2007.07.001. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/j.crhy.2007.07.001/
[1] Solar Cells, 16 (1986), pp. 289-316
[2] Prog. Photovoltaics, 2 (1994), pp. 287-289
[3] Prog. Photovolt: Res. Appl., 7 (1999), pp. 311-313
[4] Phys. Rev. B, 52 (1995), pp. 7798-7801
[5] Phys. Stat. Sol. (b), 177 (1993), pp. 449-457
[6] L. Essaleh, S.M. Wasim, J. Galibert, J. Léotin, in: Proceedings of the 12 International Conference on Narrow Gap Semiconductors, Toulouse, 3–7 July, 2005, p. 234
[7] Phys. Rev. B, 50 (1994), pp. 18040-18045
[8] Electronic Properties of Doped Semiconductors, Springer, Berlin, 1984
[9] J. Appl. Phys., 90 (2001), pp. 3993-3997
[10] Sov. Phys. Solid State, 7 (1965), pp. 1063-1065
[11] Solid State Commun., 35 (1980), pp. 961-964
[12] JETP, 80 (1995), pp. 1142-1146
[13] J. Appl. Phys., 88 (2000), pp. 4128-4134
[14] Phys. Rev. B, 63 (2001), pp. 094426-094432
[15] J. Phys. Chem. Solids, 66 (2005), pp. 1887-1890
[16] J. Phys. Chem. Solids, 21 (1961), pp. 179-198
[17] Phys. Rev. B, 39 (1989), pp. 10185-10191
[18] J. Phys. Chem. Solids, 1 (1956), pp. 137-142
[19] Phil. Mag. B, 46 (1982), pp. 9-93
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