Comptes Rendus
Physics/Solids, fluids: magnetic and electrical properties
Effect of the high magnetic field on the localization length in n-type Cooper Indium diselenide
Comptes Rendus. Physique, Neutron scattering: a comprehensive tool for condensed matter research, Volume 8 (2007) no. 7-8, pp. 942-947.

Variable range hopping conduction of the Mott type, where the magnetoresistance follows the relation ρ(B)=ρoexp[To(B)/T]1/4, is observed in n-type CuInSe2 below 20 K at different magnetic field values up to 35 T. The field dependence of the localization temperature To and localization length ξ can be explained with the existing theoretical models but only up to 10 T. In the high field regime, above 10 T, the magnetoresistance shows a tendency to saturate. However, excellent agreement with the theory of the variation of the hopping parameters To and ξ with B is found up to 35 T from the analysis of the interpolated magnetoresistance data obtained from the linearly extrapolated plot of Lnρ(B)/ρ(0) against B1/3. This suggests that the departure of To and ξ from the expected variation with B above 10 T is due to the effect of saturation of the magnetoresistance whose origin is not yet clear.

La conduction par saut à distance variable de type Mott où la magnétorsistance suit la relation ρ(B)=ρoexp[To(B)/T]1/4, est observée dans n-CuInSe2 en dessous de 20 K pour un champ magnétique B allant jusqu'à 35 T. L'effet de B sut la température caractéristique To et sur la longueur de localisation ξ est expliqué à l'aide des modèles théoriques existants mais pour B< 10 T. Pour B> 10 T, la magnétorésistance présente un comportement de saturation. Cependant, les variations de To et ξ avec B sont en accord avec la théorie lorsqu'on considère les données obtenues par extrapolation des courbes Lnρ(B)/ρ(0) en fonction de B1/3. Ceci suggère que le désaccord observé au dessus de 10 T est lié à la saturation de la magnétoprésistance. L'origine de cette saturation n'est pas encore claire.

Received:
Accepted:
Published online:
DOI: 10.1016/j.crhy.2007.07.001
Keywords: Semiconductor, Variable range hopping, Magnetoresistance
Mots-clés : Semi-conducteur, Saut à distance variable, Magnétorsistance

Lahcen Essaleh 1; Syed M. Wasim 2; Jean Galibert 3

1 Laboratoire de matière condensée et nanostructures (LMCN), université Cadi-Ayyad, faculté des sciences et techniques, département de physique, Guéliz, BP 549, Marrakech, Morocco
2 Centro de Estudios de Semiconductores, Facultad de Ciencias, Universidad de Los Andes, Merida 5101, Venezuela
3 Laboratoire national des champs magnétique pulsés, 143, avenue de Rangueil, BP 4245, 31432, Toulouse cedex 4, France
@article{CRPHYS_2007__8_7-8_942_0,
     author = {Lahcen Essaleh and Syed M. Wasim and Jean Galibert},
     title = {Effect of the high magnetic field on the localization length in n-type {Cooper} {Indium} diselenide},
     journal = {Comptes Rendus. Physique},
     pages = {942--947},
     publisher = {Elsevier},
     volume = {8},
     number = {7-8},
     year = {2007},
     doi = {10.1016/j.crhy.2007.07.001},
     language = {en},
}
TY  - JOUR
AU  - Lahcen Essaleh
AU  - Syed M. Wasim
AU  - Jean Galibert
TI  - Effect of the high magnetic field on the localization length in n-type Cooper Indium diselenide
JO  - Comptes Rendus. Physique
PY  - 2007
SP  - 942
EP  - 947
VL  - 8
IS  - 7-8
PB  - Elsevier
DO  - 10.1016/j.crhy.2007.07.001
LA  - en
ID  - CRPHYS_2007__8_7-8_942_0
ER  - 
%0 Journal Article
%A Lahcen Essaleh
%A Syed M. Wasim
%A Jean Galibert
%T Effect of the high magnetic field on the localization length in n-type Cooper Indium diselenide
%J Comptes Rendus. Physique
%D 2007
%P 942-947
%V 8
%N 7-8
%I Elsevier
%R 10.1016/j.crhy.2007.07.001
%G en
%F CRPHYS_2007__8_7-8_942_0
Lahcen Essaleh; Syed M. Wasim; Jean Galibert. Effect of the high magnetic field on the localization length in n-type Cooper Indium diselenide. Comptes Rendus. Physique, Neutron scattering: a comprehensive tool for condensed matter research, Volume 8 (2007) no. 7-8, pp. 942-947. doi : 10.1016/j.crhy.2007.07.001. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/j.crhy.2007.07.001/

[1] S.M. Wasim Solar Cells, 16 (1986), pp. 289-316

[2] M.A. Conteras; A.M. Gabor; A.L. Tennat; S. Asher; J.R. Tuttle; R. Noufi Prog. Photovoltaics, 2 (1994), pp. 287-289

[3] M.A. Conteras; B. Egaas; K. Ramanathan; J. Hiltner; A. Swartzlander; F. Hasoon; R. Noufi Prog. Photovolt: Res. Appl., 7 (1999), pp. 311-313

[4] L. Essaleh; J. Galibert; S.M. Wasim; E. Hernandez; J. Léotin Phys. Rev. B, 52 (1995), pp. 7798-7801

[5] L. Essaleh; J. Galibert; S.M. Wasim; J. Léotin Phys. Stat. Sol. (b), 177 (1993), pp. 449-457

[6] L. Essaleh, S.M. Wasim, J. Galibert, J. Léotin, in: Proceedings of the 12 International Conference on Narrow Gap Semiconductors, Toulouse, 3–7 July, 2005, p. 234

[7] L. Essaleh; J. Galibert; S.M. Wasim; E. Hernandez; J. Léotin Phys. Rev. B, 50 (1994), pp. 18040-18045

[8] B.I. Shkovskii; A.L. Efros Electronic Properties of Doped Semiconductors, Springer, Berlin, 1984

[9] L. Essaleh; S.M. Wasim; J. Galibert J. Appl. Phys., 90 (2001), pp. 3993-3997

[10] O.V. Emel'yanenko; T.S. Lagunova; D.N. Nasledov; G.N. Talalkin Sov. Phys. Solid State, 7 (1965), pp. 1063-1065

[11] H. Tokumoto; R. Mansfield; M.J. Lea Solid State Commun., 35 (1980), pp. 961-964

[12] N.V. Agrinskaya; V.I. Kozub; D.V. Shamshur JETP, 80 (1995), pp. 1142-1146

[13] K.G. Lisunov; E. Arushanov; G.A. Thomas; E. Bucher; J.H. Schön J. Appl. Phys., 88 (2000), pp. 4128-4134

[14] R. Rosenbaum; T. Murphy; E. Palm; S. Hannahs; B. Brandth Phys. Rev. B, 63 (2001), pp. 094426-094432

[15] S.M. Wasim; L. Essaleh; C. Rincón; G. Marín; J. Galibert; J. Leotin J. Phys. Chem. Solids, 66 (2005), pp. 1887-1890

[16] H. Hasegawa; R.E. Howard J. Phys. Chem. Solids, 21 (1961), pp. 179-198

[17] A. Roy; M. Levy; X.M. Guo; P.M. Sarachik Phys. Rev. B, 39 (1989), pp. 10185-10191

[18] Y. Yafet; R.W. Keyes; E.N. Adams J. Phys. Chem. Solids, 1 (1956), pp. 137-142

[19] H. Tokumoto; R. Mansfield; M.J. Lea Phil. Mag. B, 46 (1982), pp. 9-93

Cited by Sources:

Comments - Policy