Wires represent a new class of nanostructures that offer unprecedented freedom in materials design and new physical properties. Amongst the very different growth mechanisms reported in literature, the vapour-phase growth of self-catalyzed wires has the advantages of simplicity and rapidity with a low level of contaminants. The elaborations of semiconducting and metallic wires are usually considered as very distinct fields and no significant analogies have been noticed yet. This paper illustrates significant similarities of the mechanisms involved in the GaN and Cu wire growths that highlight firstly the role of the substrate surface preparation (with the deposition of an intermediate layer on the substrate surface impacting the nucleation seeds) and secondly the role of the different diffusion paths contributing to the one-dimensional growth in particular the influence of the surrounding gas phase and respective diffusion lengths on the substrate surface and wire sidewall. Experimental data describing the evolution of the wire diameter and length as a function of the growth time are quantitatively analyzed to evidence different growth regimes.
Les nanofils représentent une nouvelle classe de matériaux qui offrent des possibilités nouvelles en termes de design et de propriétés physiques. Parmi les différents mécanismes de croissance rapportés dans la littérature, la croissance en phase vapeur de fils auto-catalysés présente lʼavantage dʼêtre simple et rapide, tout en assurant un faible niveau de contamination chimique. Les procédés dʼélaboration des fils de semiconducteurs et de métaux sont en général considérés comme bien distincts et peu dʼanalogies ont été rapportées jusquʼà présent. Cet article illustre des similarités notables entre les mécanismes de croissance de fils de GaN et de Cu, qui mettent en évidence, premièrement, le rôle de la préparation de surface (avec le dépôt dʼune couche intermédiaire sur le substrat qui impacte directement la nucléation des fils) et, deuxièmement, celui des différents chemins de diffusion, qui contribuent à la croissance unidimensionnelle, en particulier lʼinfluence de la phase gazeuse environnante et des longueurs de diffusion sur la surface du substrat et sur les facettes de fils. Les données expérimentales décrivant lʼévolution du diamètre et de la longueur des fils en fonction du temps de croissance sont analysées quantitativement pour mettre en évidence différents régimes de croissance.
Mot clés : Croissance cristalline, Fils, Mécanismes, Phase vapeur, GaN, Cu
Joël Eymery 1; Xiaojun Chen 1; Christophe Durand 1; Matthias Kolb 2; Gunther Richter 2
@article{CRPHYS_2013__14_2-3_221_0,
author = {Jo\"el Eymery and Xiaojun Chen and Christophe Durand and Matthias Kolb and Gunther Richter},
title = {Self-organized and self-catalyst growth of semiconductor and metal wires by vapour phase epitaxy: {GaN} rods versus {Cu} whiskers},
journal = {Comptes Rendus. Physique},
pages = {221--227},
publisher = {Elsevier},
volume = {14},
number = {2-3},
year = {2013},
doi = {10.1016/j.crhy.2012.10.009},
language = {en},
}
TY - JOUR AU - Joël Eymery AU - Xiaojun Chen AU - Christophe Durand AU - Matthias Kolb AU - Gunther Richter TI - Self-organized and self-catalyst growth of semiconductor and metal wires by vapour phase epitaxy: GaN rods versus Cu whiskers JO - Comptes Rendus. Physique PY - 2013 SP - 221 EP - 227 VL - 14 IS - 2-3 PB - Elsevier DO - 10.1016/j.crhy.2012.10.009 LA - en ID - CRPHYS_2013__14_2-3_221_0 ER -
%0 Journal Article %A Joël Eymery %A Xiaojun Chen %A Christophe Durand %A Matthias Kolb %A Gunther Richter %T Self-organized and self-catalyst growth of semiconductor and metal wires by vapour phase epitaxy: GaN rods versus Cu whiskers %J Comptes Rendus. Physique %D 2013 %P 221-227 %V 14 %N 2-3 %I Elsevier %R 10.1016/j.crhy.2012.10.009 %G en %F CRPHYS_2013__14_2-3_221_0
Joël Eymery; Xiaojun Chen; Christophe Durand; Matthias Kolb; Gunther Richter. Self-organized and self-catalyst growth of semiconductor and metal wires by vapour phase epitaxy: GaN rods versus Cu whiskers. Comptes Rendus. Physique, Volume 14 (2013) no. 2-3, pp. 221-227. doi : 10.1016/j.crhy.2012.10.009. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/j.crhy.2012.10.009/
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