Comptes Rendus
no. 2-3
The grain–grain–liquid triple phase line during solidification of multi-crystalline silicon
[La ligne triple grain–grain–liquide lors de la solidification du silicium multi-cristallin]
Thierry Duffar1  ; Amal Nadri1
1 SIMaP–EPM, Grenoble-INP–CNRS–UJF, BP 75, 38402 Saint Martin dʼHéres cedex, France
Comptes Rendus. Physique, Volume 14 (2013) no. 2-3, pp. 185-191.

La morphologie, facettée ou rugueuse, de lʼinterface solide–liquide lors de la solidification du silicium multi-cristallin est discutée sur la base de considérations cristallographiques, énergétiques et cinétiques classiques. Ceci permet dʼétablir des diagrammes donnant la structure de lʼinterface de solidification en fonction des paramètres du procédé. On montre que la structure des lignes triples grain–grain–liquide détermine la direction des joints de grains de façon quantitative, ce qui permet dʼenvisager la modélisation numérique de la structure de grains de lingots de silicium photovoltaïque en fonction des conditions de croissance.

The rough or faceted morphology of the solid–liquid interface during solidification of multi-crystalline silicon is discussed in terms of classical crystallographic, energetic and kinetic considerations. This allows establishing diagrams of the interface structure as a function of process parameters. It is shown that the grain–grain–liquid triple phase line structures determine quantitatively the direction of growth of the grain boundaries, then opening the door to the numerical modeling of the grain structure of photovoltaic silicon ingots as a function of growth conditions.

Publié le :
DOI : 10.1016/j.crhy.2012.12.003
Keywords: Solidification, Triple line, Grain boundary, Grain structure, Silicon, Photovoltaic
Mot clés : Solidification, Ligne triple, Joint de grains, Grains, Silicium, Photovoltaïque
Thierry Duffar 1 ; Amal Nadri 1

1 SIMaP–EPM, Grenoble-INP–CNRS–UJF, BP 75, 38402 Saint Martin dʼHéres cedex, France 
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Thierry Duffar; Amal Nadri. The grain–grain–liquid triple phase line during solidification of multi-crystalline silicon. Comptes Rendus. Physique, Volume 14 (2013) no. 2-3, pp. 185-191. doi : 10.1016/j.crhy.2012.12.003. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/j.crhy.2012.12.003/

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