Moiré excitons at line defects in transition metal dichalcogenides heterobilayers

Jianju Tang; Hongyi Yu; Chih-Kang Shih; Wang Yao

doi:10.5802/crphys.50

Moiré excitons at line defects in transition metal dichalcogenides heterobilayers
[Excitons de moiré au niveau des défauts de ligne dans les hétérocouches de dichalcogénures de métaux de transition]

Jianju Tang ^1,² ; Hongyi Yu ^1,³ ; Chih-Kang Shih ⁴ ; Wang Yao ^1,²

¹ Department of Physics, the University of Hong Kong, Hong Kong, China
² HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, China
³ Guangdong Provincial Key Laboratory of Quantum Metrology and Sensing, and School of Physics and Astronomy, Sun Yat-Sen University (Zhuhai Campus), Zhuhai 519082, China
⁴ Department of Physics, University of Texas at Austin, Austin, TX 78712, USA

Comptes Rendus. Physique, Volume 22 (2021) no. S4, pp. 53-68.

Résumé

In heterobilayers of 2D semiconductors, moiré pattern forms due to the inevitable lattice mismatch and twisting. Earlier works have shown that interlayer excitons in long-period moiré pattern experience a pronounced superlattice potential and have nanoscale patterned light-coupling properties. This leads to remarkable new possibilities to explore exciton physics and tailor optical properties. Line defects such as twin domain boundaries are commonly found in semiconducting transition metal dichalcogenides monolayer, which, in the context of a heterobilayer, leads to an interface between the $R$ -stacking moiré and $H$ -stacking moiré. Here, we show that such interface created by twin-domain boundary realizes a line-defect in the moiré superlattices for interlayer excitons, which localises a one-dimensional exciton mode of topological origin. The defect configuration in the moiré exciton superlattices can be continuously tuned by the interlayer translation and twisting angle, and is also a reflection of the atomic configuration of the domain boundary. The dispersion, wavefunction, and light coupling properties of the interface exciton modes are investigated at different superlattice defect configurations.

Première publication : 2021-03-01
Publié le : 2022-03-08

DOI : 10.5802/crphys.50

Mots clés : moiré exciton, 2D semiconductors, Twin boundary, Van der Waals heterostructure, moiré superlattices

Affiliations des auteurs :

Jianju Tang ^{1, 2} ; Hongyi Yu ^{1, 3} ; Chih-Kang Shih ⁴ ; Wang Yao ^{1, 2}

¹ Department of Physics, the University of Hong Kong, Hong Kong, China
² HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, China
³ Guangdong Provincial Key Laboratory of Quantum Metrology and Sensing, and School of Physics and Astronomy, Sun Yat-Sen University (Zhuhai Campus), Zhuhai 519082, China
⁴ Department of Physics, University of Texas at Austin, Austin, TX 78712, USA

Licence :

CC-BY 4.0

Droits d'auteur : Les auteurs conservent leurs droits

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     author = {Jianju Tang and Hongyi Yu and Chih-Kang Shih and Wang Yao},
     title = {Moir\'e excitons at line defects in transition metal dichalcogenides heterobilayers},
     journal = {Comptes Rendus. Physique},
     pages = {53--68},
     publisher = {Acad\'emie des sciences, Paris},
     volume = {22},
     number = {S4},
     year = {2021},
     doi = {10.5802/crphys.50},
     language = {en},
}

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Jianju Tang; Hongyi Yu; Chih-Kang Shih; Wang Yao. Moiré excitons at line defects in transition metal dichalcogenides heterobilayers. Comptes Rendus. Physique, Volume 22 (2021) no. S4, pp. 53-68. doi : 10.5802/crphys.50. https://comptes-rendus.academie-sciences.fr/physique/articles/10.5802/crphys.50/

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