InP-based wavelength tunable vertical cavity surface emitting laser structures

Isabelle Sagnes; Martin Strassner; Sophie Bouchoule; Jean-Louis Leclerq; Philippe Regreny; Aldrice Bakouboula; Frank Riemenschneider; Peter Meissner

doi:10.1016/S1631-0705(03)00082-3

InP-based wavelength tunable vertical cavity surface emitting laser structures
[Structures laser à cavité verticale à base d'InP accordables en longueur d'onde]

Présenté par : Guy Laval

Isabelle Sagnes ¹ ; Martin Strassner ² ; Sophie Bouchoule ¹ ; Jean-Louis Leclerq ³ ; Philippe Regreny ³ ; Aldrice Bakouboula ⁴ ; Frank Riemenschneider ⁵ ; Peter Meissner ⁵

¹ Laboratoire de photonique et nanostructures, LPN, CNRS UPR 20, route de Nozay, Marcoussis, France
² Institute for Microelectronics and Information Technology, Kungl Tekniska Högskolan – KTH, Stockholm, Sweden
³ CRELYMO, LEOM, CNRS UMR5512, École centrale de Lyon, Ecully, France
⁴ CRELYMO, LPM, UMR CNRS 5511, INSA de Lyon, Villeurbanne, France
⁵ Technical University Darmstadt, Darmstadt, Germany

Comptes Rendus. Physique, Volume 4 (2003) no. 6, pp. 675-685.

Résumé
Abstract

Nous présentons la conception, la fabrication et les caractéristiques de lasers à cavité verticale accordables en longueur d'onde mettant en œuvre une configuration hybride et une configuration en intégration monolithique. Dans les deux cas l'émission laser accordable en longueur d'onde a été obtenue en régime de pompage optique. Un concept de laser monolithique accordable pompé électriquement est également présenté.

We report on the design, fabrication and characteristics of both hybrid and monolithic micro-electro-mechanically wavelength tunable 1.55 μm InP-based Vertical-Cavity Surface-Emitting Laser (VCSEL) structures. Photo-pumped tunable VCSELs are successfully realized using both configurations, and a design for electrically pumped tunable VCSEL is presented.

Reçu le : 2003-02-21
Accepté le : 2003-02-26
Publié le : 2003-07-01

DOI : 10.1016/S1631-0705(03)00082-3

Keywords: Tunable lasers, Vertical surface emitting lasers, III-V semiconductors, Micro-opto-electro-mechanical systems
Mot clés : Lasers accordables, Lasers à cavité verticale, Semiconducteurs III-V, Membranes semiconductrices

Affiliations des auteurs :

Isabelle Sagnes ¹ ; Martin Strassner ² ; Sophie Bouchoule ¹ ; Jean-Louis Leclerq ³ ; Philippe Regreny ³ ; Aldrice Bakouboula ⁴ ; Frank Riemenschneider ⁵ ; Peter Meissner ⁵

¹ Laboratoire de photonique et nanostructures, LPN, CNRS UPR 20, route de Nozay, Marcoussis, France
² Institute for Microelectronics and Information Technology, Kungl Tekniska Högskolan – KTH, Stockholm, Sweden
³ CRELYMO, LEOM, CNRS UMR5512, École centrale de Lyon, Ecully, France
⁴ CRELYMO, LPM, UMR CNRS 5511, INSA de Lyon, Villeurbanne, France
⁵ Technical University Darmstadt, Darmstadt, Germany

@article{CRPHYS_2003__4_6_675_0,
     author = {Isabelle Sagnes and Martin Strassner and Sophie Bouchoule and Jean-Louis Leclerq and Philippe Regreny and Aldrice Bakouboula and Frank Riemenschneider and Peter Meissner},
     title = {InP-based wavelength tunable vertical cavity surface emitting laser structures},
     journal = {Comptes Rendus. Physique},
     pages = {675--685},
     publisher = {Elsevier},
     volume = {4},
     number = {6},
     year = {2003},
     doi = {10.1016/S1631-0705(03)00082-3},
     language = {en},
}

TY  - JOUR
AU  - Isabelle Sagnes
AU  - Martin Strassner
AU  - Sophie Bouchoule
AU  - Jean-Louis Leclerq
AU  - Philippe Regreny
AU  - Aldrice Bakouboula
AU  - Frank Riemenschneider
AU  - Peter Meissner
TI  - InP-based wavelength tunable vertical cavity surface emitting laser structures
JO  - Comptes Rendus. Physique
PY  - 2003
SP  - 675
EP  - 685
VL  - 4
IS  - 6
PB  - Elsevier
DO  - 10.1016/S1631-0705(03)00082-3
LA  - en
ID  - CRPHYS_2003__4_6_675_0
ER  -

%0 Journal Article
%A Isabelle Sagnes
%A Martin Strassner
%A Sophie Bouchoule
%A Jean-Louis Leclerq
%A Philippe Regreny
%A Aldrice Bakouboula
%A Frank Riemenschneider
%A Peter Meissner
%T InP-based wavelength tunable vertical cavity surface emitting laser structures
%J Comptes Rendus. Physique
%D 2003
%P 675-685
%V 4
%N 6
%I Elsevier
%R 10.1016/S1631-0705(03)00082-3
%G en
%F CRPHYS_2003__4_6_675_0

Isabelle Sagnes; Martin Strassner; Sophie Bouchoule; Jean-Louis Leclerq; Philippe Regreny; Aldrice Bakouboula; Frank Riemenschneider; Peter Meissner. InP-based wavelength tunable vertical cavity surface emitting laser structures. Comptes Rendus. Physique, Volume 4 (2003) no. 6, pp. 675-685. doi : 10.1016/S1631-0705(03)00082-3. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/S1631-0705(03)00082-3/

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