[Signature en phase et en fréquence d'un laser à semi-conducteurs soumis à une injection optique]
Les principaux paramètres de contrôle d'un laser à semi-conducteurs soumis à une injection optique sont la fréquence et la puissance du signal injecté. Suivant leurs valeurs, divers comportements peuvent être observés : accrochage en phase, en fréquence, mélange multi-ondes, tirage en fréquence, hystérésis, chaos,... Nous montrons que la caractérisation spectrale du laser esclave (injecté) permet de mieux comprendre l'interaction non linéaire entre les deux sources en compétition : l'émission spontanée et le signal externe, dont les spectres sont amplifiés sans distinction par le milieu actif. Cette amplification est par conséquent fortement dépendante de la cohérence des sources. Nous décrivons le rôle du laser injecté comme celui d'un filtre et d'un amplificateur. Nous montrons alors que le laser peut-être utilisé pour traiter le signal d'entrée de manière pas encore totalement exploitée.
The main control parameters of a single mode semiconductor laser submitted to an injected external signal are the power and the frequency of the injected signal. Following their magnitude, many phenomena can be observed such as phase locking, frequency locking, frequency generation, push-pull effects, hysteresis phenomena and chaos,... We show here that the spectral signature of the slave laser enables a better understanding of the the nonlinear interaction between the two competing sources: the spontaneous emission and the external field for which spectra are equally amplified through the active medium. This amplification is then strongly dependent on their coherency. We describe the role of the injected laser as a filter and an amplifier. It follows that the laser can be used to process information in ways that are not yet completely exploited.
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Mots-clés : Injection optique, Largeur de raie, Laser à semi-conducteurs, Transfert spectral, Accrochage de phase, Accrochage de fréquence, Cohérence
Stéphane Blin 1 ; Céline Guignard 1 ; Pascal Besnard 1 ; Renaud Gabet 2 ; Guy Michel Stéphan 1 ; Marc Bondiou 3
@article{CRPHYS_2003__4_6_687_0,
author = {St\'ephane Blin and C\'eline Guignard and Pascal Besnard and Renaud Gabet and Guy Michel St\'ephan and Marc Bondiou},
title = {Phase and spectral properties of optically injected semiconductor lasers},
journal = {Comptes Rendus. Physique},
pages = {687--699},
publisher = {Elsevier},
volume = {4},
number = {6},
year = {2003},
doi = {10.1016/S1631-0705(03)00083-5},
language = {en},
}
TY - JOUR AU - Stéphane Blin AU - Céline Guignard AU - Pascal Besnard AU - Renaud Gabet AU - Guy Michel Stéphan AU - Marc Bondiou TI - Phase and spectral properties of optically injected semiconductor lasers JO - Comptes Rendus. Physique PY - 2003 SP - 687 EP - 699 VL - 4 IS - 6 PB - Elsevier DO - 10.1016/S1631-0705(03)00083-5 LA - en ID - CRPHYS_2003__4_6_687_0 ER -
%0 Journal Article %A Stéphane Blin %A Céline Guignard %A Pascal Besnard %A Renaud Gabet %A Guy Michel Stéphan %A Marc Bondiou %T Phase and spectral properties of optically injected semiconductor lasers %J Comptes Rendus. Physique %D 2003 %P 687-699 %V 4 %N 6 %I Elsevier %R 10.1016/S1631-0705(03)00083-5 %G en %F CRPHYS_2003__4_6_687_0
Stéphane Blin; Céline Guignard; Pascal Besnard; Renaud Gabet; Guy Michel Stéphan; Marc Bondiou. Phase and spectral properties of optically injected semiconductor lasers. Comptes Rendus. Physique, semiconductor lasers, Volume 4 (2003) no. 6, pp. 687-699. doi : 10.1016/S1631-0705(03)00083-5. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/S1631-0705(03)00083-5/
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