Nanometric artificial structuring of semiconductor surfaces for crystalline growth

J. Eymery; G. Biasiol; E. Kapon; T. Ogino

doi:10.1016/j.crhy.2004.11.006

Nanometric artificial structuring of semiconductor surfaces for crystalline growth

Presented by: Guy Laval

J. Eymery ¹ ; G. Biasiol ²; E. Kapon ²; T. Ogino ³

¹ Équipe mixte CEA-CNRS-UJF « Nanophysique et Semiconducteurs », CEA/DRFMC/SP2M, 17, rue des Martyrs, 38054 Grenoble cedex 9, France
² Laboratory of Physics of Nanostructures, Institute of Quantum Electronics and Photonics, Swiss Federal Institute of Technology, Lausanne, CH-1015 Lausanne, Switzerland
³ Department of Electrical and Computer Engineering, Yokohama National University, Tokiwadai 79-5, Hodogayaku, 240-8601 Yokohama, Japan

Comptes Rendus. Physique, Self-organization on surfaces, Volume 6 (2005) no. 1, pp. 105-116.

Abstract
Résumé

The coupling of standard self-organization methods with surface artificial nanostructuring has recently emerged as a promising technique in semiconductor materials to control simultaneously the size distribution, the density and the position of epitaxial nanostructures. Some physical aspects of the morphology and elastic strain engineering are reviewed in this article. The emphasis is on the effects of capillarity, growth rate anisotropy, strain relaxation and entropy of mixing for alloys. The interplay among these driving forces is first illustrated by III–V compound semiconductor growth on lithographically patterned surfaces, then by germanium growth on implanted substrates and nanopatterned templates obtained by chemical etching of buried strain dislocation networks.

Le couplage de méthodes classiques d'auto-organisation avec des nanostructurations artificielles de surfaces s'est récemment avéré être une excellente technique dans les matériaux semi-conducteurs pour contrôler simultanément la taille, la densité et la position de nanostructures épitaxiées. Certains aspects physiques concernant l'ingénierie de la morphologie et de la contrainte élastique sont passés en revue dans cet article. L'accent est mis sur les effets de capillarité, d'anisotropie de la vitesse de croissance, de relaxation de contrainte et d'entropie de mélange pour les alliages. L'interaction entre ces différentes forces motrices est illustrée en premier par la croissance de composés de semi-conducteurs III–V sur des surfaces obtenues par lithographie, puis par la croissance de germanium sur des substrats implantés et sur des surfaces nanostructurées obtenues par attaque chimique de réseaux de dislocations enterrées.

Published online: 2005-01-01

DOI: 10.1016/j.crhy.2004.11.006

Keywords: Surface nanopatterning, Self-assembling, Epitaxial growth, Strain and curvature engineering
Mots-clés : Nanostructuration de surface, Auto-organisation, Croissance épitaxiale, Ingénierie de contrainte et de courbure

Author's affiliations:

J. Eymery ¹; G. Biasiol ²; E. Kapon ²; T. Ogino ³

¹ Équipe mixte CEA-CNRS-UJF « Nanophysique et Semiconducteurs », CEA/DRFMC/SP2M, 17, rue des Martyrs, 38054 Grenoble cedex 9, France
² Laboratory of Physics of Nanostructures, Institute of Quantum Electronics and Photonics, Swiss Federal Institute of Technology, Lausanne, CH-1015 Lausanne, Switzerland
³ Department of Electrical and Computer Engineering, Yokohama National University, Tokiwadai 79-5, Hodogayaku, 240-8601 Yokohama, Japan

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J. Eymery; G. Biasiol; E. Kapon; T. Ogino. Nanometric artificial structuring of semiconductor surfaces for crystalline growth. Comptes Rendus. Physique, Self-organization on surfaces, Volume 6 (2005) no. 1, pp. 105-116. doi : 10.1016/j.crhy.2004.11.006. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/j.crhy.2004.11.006/

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