The fabrication of low-dimensional nanostructures (e.g. quantum wires or quantum dots) is presently among the most exciting challenges in semiconductor technology. The electronic and optical properties of these systems depend decisively on structural parameters, such as size, shape, elastic strain, chemical composition and positional correlation among the nanostructures. X-ray scattering methods have proven to be an excellent tool to get access to these parameters. Beyond its sensitivity to deformations of the crystal lattice, it is sensitive to fluctuations of the surface and interface morphology on length scales ranging from 0.1 nm up to several μm. The small dimensions and the corresponding weak scattering signal require the use of highly brilliant synchrotron radiation. Recent methodological developments and their application to the material system Ge on Si are discussed.
Méthodes de rayons X pour l'analyse des déformations et des compositions des nano-structures semi-conductrices auto-organisées. La fabrication de nanostructures de basse dimension (par exemple, fils et boîtes quantiques) est actuellement un des défis les plus passionnants de la technologie des semi-conducteurs. Les propriétés optiques et électroniques de ces systèmes dépendent de façon décisive de paramètres structuraux tels que la taille, la forme, les contraintes élastiques, la composition chimique et les corrélations de position entre les nanostructures. Les méthodes de diffusion des rayons X se sont révélées parfaitement adaptées à l'obtention de ces paramètres. En plus de leur sensibilité aux déformations du réseau cristallin, elles renseignent sur les fluctuations de la morphologie des surfaces et interfaces à une échelle spatiale allant de 0.1 nm jusqu'à plusieurs micromètres. Les petites dimensions et le faible signal de diffusion correspondant nécessitent l'utilisation de rayonnement synchrotron extrêmement brillant. Les développements méthodologiques récents et leur application au système Ge sur Si sont discutés.
Keywords: Nanostructures, Auto-organisation, Diffusion des rayons X, Semi-conducteurs, Rayonnement synchrotron, Diffusion anomale, Éléments finis
Till Hartmut Metzger 1; Tobias Urs Schülli 1, 2; Martin Schmidbauer 3
@article{CRPHYS_2005__6_1_47_0,
author = {Till Hartmut Metzger and Tobias Urs Sch\"ulli and Martin Schmidbauer},
title = {X-ray methods for strain and composition analysis in self-organized semiconductor nanostructures},
journal = {Comptes Rendus. Physique},
pages = {47--59},
publisher = {Elsevier},
volume = {6},
number = {1},
year = {2005},
doi = {10.1016/j.crhy.2004.11.002},
language = {en},
}
TY - JOUR AU - Till Hartmut Metzger AU - Tobias Urs Schülli AU - Martin Schmidbauer TI - X-ray methods for strain and composition analysis in self-organized semiconductor nanostructures JO - Comptes Rendus. Physique PY - 2005 SP - 47 EP - 59 VL - 6 IS - 1 PB - Elsevier DO - 10.1016/j.crhy.2004.11.002 LA - en ID - CRPHYS_2005__6_1_47_0 ER -
%0 Journal Article %A Till Hartmut Metzger %A Tobias Urs Schülli %A Martin Schmidbauer %T X-ray methods for strain and composition analysis in self-organized semiconductor nanostructures %J Comptes Rendus. Physique %D 2005 %P 47-59 %V 6 %N 1 %I Elsevier %R 10.1016/j.crhy.2004.11.002 %G en %F CRPHYS_2005__6_1_47_0
Till Hartmut Metzger; Tobias Urs Schülli; Martin Schmidbauer. X-ray methods for strain and composition analysis in self-organized semiconductor nanostructures. Comptes Rendus. Physique, Self-organization on surfaces, Volume 6 (2005) no. 1, pp. 47-59. doi : 10.1016/j.crhy.2004.11.002. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/j.crhy.2004.11.002/
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