Comptes Rendus
Advanced metrology needs for nanoelectronics lithography
[Besoins en métrologie avancée pour la lithographie nanoélectronique]
Comptes Rendus. Physique, Volume 7 (2006) no. 8, pp. 931-941.

Depuis plus de quatre décennies l'industrie du semiconducteur a mis à profit les améliorations de productivité obtenues par le biais d'une réduction agressive des dimensions de motifs. Alors qu'un effort énorme a été dépensé pour développer les outils de lithographie optique afin d'imprimer des traits de plus en plus fins, des avancées significatives ont été aussi nécessaires pour mesurer les motifs imprimés. Dans cet article nous discuterons certaines techniques de pointe de métrologie utilisées aujourd'hui pour mesurer les dimensions critiques de traits imprimés à savoir la microscopie électronique à balayage et la microscopie à force atomique. Nous décrirons le travail mené au National Institute of Standards and Technology pour faire progresser ces instruments, ainsi que le travail exploratoire sur deux techniques nouvelles prometteuses que sont la microscopie en champ diffracté et la diffraction de rayons X aux petits angles. La métrologie et le contrôle de la rugosité de trait, des dimensions critiques et du recouvrement sont deux des besoins les plus importants de l'industrie auxquels fait référence la feuille de route internationale de la technologie des semiconducteurs (2005).

The semiconductor industry has exploited productivity improvements through aggressive feature size reduction for over four decades. While enormous effort has been expended in developing the optical lithography tools to print ever finer features, significant advances have also been required to measure the printed features. In this article we will discuss the current state of the art in the metrology for measuring critical dimensions of printed features for scanning electron microscopy and atomic force microscopy, and describe work at the National Institute of Standards and Technology advancing these tools as well as exploratory work on two new promising techniques, scatterfield microscopy and small angle X-ray scattering. Line width roughness critical dimension and overlay metrology and control are two of the most significant industry needs mentioned in the International Technology Roadmap for Semiconductors (2005).

Publié le :
DOI : 10.1016/j.crhy.2006.10.004
Keywords: CD-SEM, CD-AFM, Scatterfield microscopy, CD-SAXS
Mot clés : CD-SEM, CD-AFM, Microscopie en champ diffracté, CD-SAXS

Stephen Knight 1 ; Ronald Dixson 1 ; Ronald L. Jones 1 ; Eric K. Lin 1 ; Ndubuisi G. Orji 1 ; R. Silver 1 ; John S. Villarrubia 1 ; András E. Vladár 1 ; Wen-li Wu 1

1 National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899, USA
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Stephen Knight; Ronald Dixson; Ronald L. Jones; Eric K. Lin; Ndubuisi G. Orji; R. Silver; John S. Villarrubia; András E. Vladár; Wen-li Wu. Advanced metrology needs for nanoelectronics lithography. Comptes Rendus. Physique, Volume 7 (2006) no. 8, pp. 931-941. doi : 10.1016/j.crhy.2006.10.004. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/j.crhy.2006.10.004/

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