EUV lithography

Kevin Kemp; Stefan Wurm

doi:10.1016/j.crhy.2006.10.002

EUV lithography
[Lithographie EUV]

Kevin Kemp ¹ ; Stefan Wurm ¹

¹ SEMATECH, 2706, Montopolis Drive, Austin, TX 78741, USA

Comptes Rendus. Physique, Volume 7 (2006) no. 8, pp. 875-886.

Résumé
Abstract

Le développement de la technologie et de l'infrastructure relatives à la lithographie en ultraviolet extrême (EUVL) a fait d'excellents progrès ces dernières années et les fournisseurs d'équipements livrent des machines alpha à des clients. Cependant les exigences sur la source, le masque, l'optique et la résine sont des défis difficiles et des efforts significatifs dans les développements sont encore nécessaires pour permettre des performances au niveau d'équipements bêta ou de production.

Parmi les quelques avancées importantes de ces dernières années on compte la puissance de sortie accrue de la source, le développement et l'intégration de l'équipement et du système optique, ainsi que la réduction des défauts des blancs de masque. A titre d'exemple la puissance de la source a été augmentée à des niveaux approchant les spécifications, mais opérer la source de manière fiable à ces niveaux de puissance n'a pas encore été complètement démontré. Des efforts significatifs sont aussi nécessaires pour satisfaire les exigences sur les photo-résines EUV en termes de résolution, de rugosité de trait et de photosensibilité.

Le coût de possession et la capacité à étendre la technique à des nœuds futurs sont des facteurs clés pour déterminer les perspectives d'insertion de l'EUVL en production. Puisque le débit de plaques est un facteur critique dans les coûts, la puissance de source, la sensibilité de la résine et la conception du système ont besoin d'être tous pris soigneusement en considération. Cependant, si les défis techniques et commerciaux peuvent être relevés, l'EUVL sera alors le choix technologique probable pour la fabrication de semiconducteurs pour les nœuds aux demi pas de 32, 22, 16 et 11 nm.

Extreme ultraviolet lithography (EUVL) technology and infrastructure development has made excellent progress over the past several years, and tool suppliers are delivering alpha tools to customers. However, requirements in source, mask, optics, and resist are very challenging, and significant development efforts are still needed to support beta and production-level performance.

Some of the important advances in the past few years include increased source output power, tool and optics system development and integration, and mask blank defect reduction. For example, source power has increased to levels approaching specification, but reliable source operation at these power levels has yet to be fully demonstrated. Significant efforts are also needed to achieve the resolution, line width roughness, and photospeed requirements for EUV photoresists.

Cost of ownership and extendibility to future nodes are key factors in determining the outlook for the manufacturing insertion of EUVL. Since wafer throughput is a critical cost factor, source power, resist sensitivity, and system design all need to be carefully considered. However, if the technical and business challenges can be met, then EUVL will be the likely technology of choice for semiconductor manufacturing at the 32, 22, 16 and 11 nm half-pitch nodes.

Publié le : 2006-10-01

DOI : 10.1016/j.crhy.2006.10.002

Keywords: EUV lithography, EUV source, EUV mask, EUV optics, EUV resist
Mot clés : Lithographie EUV, Source EUV, Masque EUV, Optique EUV, Résine EUV

Affiliations des auteurs :

Kevin Kemp ¹ ; Stefan Wurm ¹

¹ SEMATECH, 2706, Montopolis Drive, Austin, TX 78741, USA

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     author = {Kevin Kemp and Stefan Wurm},
     title = {EUV lithography},
     journal = {Comptes Rendus. Physique},
     pages = {875--886},
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     number = {8},
     year = {2006},
     doi = {10.1016/j.crhy.2006.10.002},
     language = {en},
}

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Kevin Kemp; Stefan Wurm. EUV lithography. Comptes Rendus. Physique, Volume 7 (2006) no. 8, pp. 875-886. doi : 10.1016/j.crhy.2006.10.002. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/j.crhy.2006.10.002/

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