Role of patterning in islands nucleation on semiconductor surfaces

Nunzio Motta; Pierre D. Szkutnik; Massimo Tomellini; Anna Sgarlata; Massimo Fanfoni; Fulvia Patella; Adalberto Balzarotti

doi:10.1016/j.crhy.2006.10.013

Role of patterning in islands nucleation on semiconductor surfaces
[Rôle de la structuration lors de la nucléation d'îlots sur les surfaces des semi-conducteurs]

Nunzio Motta ¹ ; Pierre D. Szkutnik ² ; Massimo Tomellini ³ ; Anna Sgarlata ⁴ ; Massimo Fanfoni ⁴ ; Fulvia Patella ⁴ ; Adalberto Balzarotti ⁴

¹ School of Engineering Systems, Queensland University of Technology, GPO Box 2434, Brisbane 4001, Australia
² L2MP – CNRS, umr 6137, Faculté des Sciences de St Jérôme, Avenue Escadrille Normandie niemen – case 142, F-13397 Marseille cedex 20, France
³ Dipartimento di Chimica, Università di Roma Tor Vergata, Via della Ricerca Scientifica 1, 00173 Roma, Italy
⁴ Dipartimento di Fisica, Università di Roma Tor Vergata, Via della Ricerca Scientifica 1, 00173 Roma, Italy

Comptes Rendus. Physique, Volume 7 (2006) no. 9-10, pp. 1046-1072.

Résumé
Abstract

Les boîtes quantiques (BQ) obtenues par croissance sur les surfaces des semi-conducteurs constituent l'objectif prioritaire des chercheurs en vue de développer de nouvelles applications technologiques dans les prochaines années. Les nouvelles perspectives dans la technologie des nanodispositifs reposent sur un positionnement précis du site de nucléation des BQs et sur le contrôle de leur forme et de leur taille. Dans le présent article, nous passerons en revue quelques études récentes concernant le contrôle de la nucléation sur les surfaces des semi-conducteurs. Après un bref rappel de la théorie de la nucléation « libre » sur les surfaces et sur le rôle des marches et des défauts, on explore quelques voies nouvelles pour former des structurations ordonnées : d'une part une structuration naturelle induite par des instabilités de surface (par exemple mise en paquet des marches ou formation de méandres sur les marches), d'autre part une structuration in situ du substrat par microscopie à effet tunnel (STM), et une structuration à haute résolution par faisceaux d'ions focalisés (FIB). La croissance des couches épitaxiales de semi-conducteurs (Ge/Si(100) et InAs/GaAs(100)) sur ces surfaces à morphologie structurée a été étudiée par STM ou Microscopie à Force Atomique (AFM), révélant le mode d'agrégation des premiers atomes et identifiant le site exact de la nucléation. Par l'emploi de surfactants sur substrats désorientés, on a induit une taille de BQs, afin qu'elles s'adaptent à la longueur d'onde typique de la structuration. Les images STM, obtenues en temps réel, ont permis d'identifier le mécanisme de formation des agrégats de Ge sur Si(100) présentant une structuration morphologique spécifique, et de suivre la transition des îlots de la forme pré-pyramidale à la forme pyramidale. Le contrôle du site de nucléation des îlots de Ge sur les couches de SiO₂ a été obtenue par FIB, permettant d'obtenir des densités d'îlots de $3, 5 \times 10^{10} / {cm}^{2}$ .

Quantum dots (QDs) grown on semiconductors surfaces are actually the main researchers' interest for applications in the forthcoming nanotechnology era. New frontiers in nanodevice technology rely on the precise positioning of the nucleation site and on controlling the shape and size of the dots. In this article we will review some recent studies regarding the control of the nucleation process on semiconductor surfaces. A few approaches to form ordered patterns on surfaces are described: natural patterning induced by surface instabilities (as step bunching or step meandering), in situ substrate patterning by Scanning Tunneling Microscopy (STM), high resolution patterning by Focused Ion Beam (FIB). Growth of epitaxial layers of semiconductors (Ge/Si(100) and InAs/GaAs(100)) on patterned surfaces has been studied by STM or Atomic Force Microscopy (AFM) unveiling the way in which the first atoms start to aggregate and identifying their exact nucleation site. Control of the dot size to match the patterning typical wavelength has been achieved by using surfactants on misoriented substrates. STM images acquired in real time allows one to identify the mechanism of Ge cluster formation on patterned Si(100), and to follow the island transition from pre-pyramid to pyramid. Nucleation of ordered Ge dots on SiO₂ substrates has been obtained thanks to FIB tight patterning, achieving island densities of $3.5 \times 10^{10} / {cm}^{2}$ .

Publié le : 2006-11-01

DOI : 10.1016/j.crhy.2006.10.013

Keywords: Quantum dots, Nucleation process, Semiconductor surfaces
Mot clés : Boîtes quantiques, Contrôle de la nucléation, Surfaces des semi-conducteurs

Affiliations des auteurs :

Nunzio Motta ¹ ; Pierre D. Szkutnik ² ; Massimo Tomellini ³ ; Anna Sgarlata ⁴ ; Massimo Fanfoni ⁴ ; Fulvia Patella ⁴ ; Adalberto Balzarotti ⁴

¹ School of Engineering Systems, Queensland University of Technology, GPO Box 2434, Brisbane 4001, Australia
² L2MP – CNRS, umr 6137, Faculté des Sciences de St Jérôme, Avenue Escadrille Normandie niemen – case 142, F-13397 Marseille cedex 20, France
³ Dipartimento di Chimica, Università di Roma Tor Vergata, Via della Ricerca Scientifica 1, 00173 Roma, Italy
⁴ Dipartimento di Fisica, Università di Roma Tor Vergata, Via della Ricerca Scientifica 1, 00173 Roma, Italy

@article{CRPHYS_2006__7_9-10_1046_0,
     author = {Nunzio Motta and Pierre D. Szkutnik and Massimo Tomellini and Anna Sgarlata and Massimo Fanfoni and Fulvia Patella and Adalberto Balzarotti},
     title = {Role of patterning in islands nucleation on semiconductor surfaces},
     journal = {Comptes Rendus. Physique},
     pages = {1046--1072},
     publisher = {Elsevier},
     volume = {7},
     number = {9-10},
     year = {2006},
     doi = {10.1016/j.crhy.2006.10.013},
     language = {en},
}

TY  - JOUR
AU  - Nunzio Motta
AU  - Pierre D. Szkutnik
AU  - Massimo Tomellini
AU  - Anna Sgarlata
AU  - Massimo Fanfoni
AU  - Fulvia Patella
AU  - Adalberto Balzarotti
TI  - Role of patterning in islands nucleation on semiconductor surfaces
JO  - Comptes Rendus. Physique
PY  - 2006
SP  - 1046
EP  - 1072
VL  - 7
IS  - 9-10
PB  - Elsevier
DO  - 10.1016/j.crhy.2006.10.013
LA  - en
ID  - CRPHYS_2006__7_9-10_1046_0
ER  -

%0 Journal Article
%A Nunzio Motta
%A Pierre D. Szkutnik
%A Massimo Tomellini
%A Anna Sgarlata
%A Massimo Fanfoni
%A Fulvia Patella
%A Adalberto Balzarotti
%T Role of patterning in islands nucleation on semiconductor surfaces
%J Comptes Rendus. Physique
%D 2006
%P 1046-1072
%V 7
%N 9-10
%I Elsevier
%R 10.1016/j.crhy.2006.10.013
%G en
%F CRPHYS_2006__7_9-10_1046_0

Nunzio Motta; Pierre D. Szkutnik; Massimo Tomellini; Anna Sgarlata; Massimo Fanfoni; Fulvia Patella; Adalberto Balzarotti. Role of patterning in islands nucleation on semiconductor surfaces. Comptes Rendus. Physique, Volume 7 (2006) no. 9-10, pp. 1046-1072. doi : 10.1016/j.crhy.2006.10.013. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/j.crhy.2006.10.013/

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