Growth of a strained epitaxial film on a patterned substrate

Xianbin Xu; Jean-Noël Aqua; Thomas Frisch

doi:10.1016/j.crhy.2012.11.006

Growth of a strained epitaxial film on a patterned substrate
[Croissance dʼun film épitaxié contraint sur un substrat patterné]

Xianbin Xu ¹ ; Jean-Noël Aqua ¹ ; Thomas Frisch ²

¹ Institut des nanosciences de Paris, université Pierre-et-Marie-Curie–Paris-6, CNRS UMR 7588, 4, place Jussieu, 75252 Paris, France
² Institut non linéaire de Nice, université de Nice–Sophia Antipolis, CNRS UMR 6618, 1361, routes des Lucioles, 06560 Valbonne, France

Comptes Rendus. Physique, Volume 14 (2013) no. 2-3, pp. 199-207.

Résumé
Abstract

Nous étudions lʼinfluence de la cinétique de croissance sur lʼinstabilité dʼAsaro–Tiller–Grinfelʼd qui se développe sur un film mince sur un substrat structuré. Nous utilisons un modèle continu qui est résolu au premier ordre en la pente de la surface. Les interactions de mouillage ainsi que le champ élastique induit par lʼinterface film/substrat introduisent une dépendance explicite dans lʼépaisseur du film. En conséquence, la symétrie par translation dans la direction de croissance est brisée et le flux de déposition nʼest pas un paramètre trivial de lʼinstabilité. Comme dans le cas du recuit, nous trouvons que lʼinstabilité peut évoluer dʼune configuration en phase vers une configuration en opposition de phase avec le substrat, en fonction du temps de déposition et de lʼépaisseur du film. Nous comparons lʼévolution de lʼinstabilité pour différents flux de croissance. Le diagramme des phases cinétique obtenu dans le cas du recuit rend aussi compte de lʼévolution du film lors de la croissance dans ses conditions courantes.

We study the influence of the growth kinetics on the Asaro–Tiller–Grinfelʼd instability of a thin film deposited on a patterned substrate. We use a continuum model that we solve at first order in the surface slope. Both wetting interactions and elastic fields induced by the film/substrate interface introduce an explicit dependence on the film thickness. As a consequence, the translational symmetry in the growth direction is broken and the deposition flux cannot be trivially accounted for. Similarly to the evolution during annealing, the instability can skip during growth from an in-phase to an out-of-phase geometry depending on the growth duration and film thickness. We compare the evolution of the instability using different deposition fluxes. We find that the kinetic phase diagram found in the annealing case also explains the evolution during growth in usual growth conditions.

Publié le : 2013-02-01

DOI : 10.1016/j.crhy.2012.11.006

Keywords: Strained epitaxial film, Asaro–Tiller–Grinfelʼd instability, Patterning
Mot clés : Film épitaxié contraint, Instabilité dʼAsaro–Tiller–Grinfelʼd, Structuration

Affiliations des auteurs :

Xianbin Xu ¹ ; Jean-Noël Aqua ¹ ; Thomas Frisch ²

¹ Institut des nanosciences de Paris, université Pierre-et-Marie-Curie–Paris-6, CNRS UMR 7588, 4, place Jussieu, 75252 Paris, France
² Institut non linéaire de Nice, université de Nice–Sophia Antipolis, CNRS UMR 6618, 1361, routes des Lucioles, 06560 Valbonne, France

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     author = {Xianbin Xu and Jean-No\"el Aqua and Thomas Frisch},
     title = {Growth of a strained epitaxial film on a patterned substrate},
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     pages = {199--207},
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     year = {2013},
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Xianbin Xu; Jean-Noël Aqua; Thomas Frisch. Growth of a strained epitaxial film on a patterned substrate. Comptes Rendus. Physique, Volume 14 (2013) no. 2-3, pp. 199-207. doi : 10.1016/j.crhy.2012.11.006. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/j.crhy.2012.11.006/

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