Comptes Rendus
no. 8
Intersublevel transitions in self-assembled quantum dots
[Transitions inter-sous-niveaux dans les boîtes quantiques auto-assemblées]
Philippe Boucaud1  ; Sébastien Sauvage1 ; Julien Houel1
1 Institut d'Electronique Fondamentale, CNRS Université Paris-Sud XI, bâtiment 220, 91405 Orsay cedex, France
Comptes Rendus. Physique, Recent advances in quantum dot physics / Nouveaux développements dans la physique des boîtes quantiques, Volume 9 (2008) no. 8, pp. 840-849.

Les transitions inter-sous-niveaux dans les boîtes quantiques de semi-conducteurs sont les transitions que peut effectuer un porteur de charge entre niveaux confinés. Dans les boîtes quantiques auto-assemblées InAs/GaAs, les transitions inter-sous-niveaux optiquement actives peuvent être observées dans la gamme spectrale de l'infrarouge moyen. Ces transitions dévoilent de nouvelles facettes de la physique des boîtes quantiques de semi-conducteurs et ouvrent de nouvelles perspectives pour le développement de composants moyen-infrarouges. Une caractéristique clef des transitions inter-sous-niveaux est le couplage des porteurs de charges confinés avec les phonons. Nous montrons que le régime de couplage fort pour l'interaction électron–phonon optique et la formation de particules mixtes électron–phonon appelées polarons gouvernent la dynamique des boîtes quantiques. L'ingénierie des taux de relaxation dans les boîtes quantiques, obtenue au travers du couplage électron–phonon, ouvre la voie à la réalisation de nouveaux dispositifs tels qu'un laser moyen-infrarouge à polarons. Nous montrons enfin que la mesure de l'absorption inter-sous-niveaux n'est pas limitée à des ensembles de boîtes quantiques et que l'absorption ultrafaible d'une boîte quantique unique peut être mesurée avec une résolution spatiale nanométrique en exploitant l'émission de phonons comme signature de l'absorption.

Intersublevel transitions in semiconductor quantum dots are transitions of a charge carrier between quantum dot confined states. In InAs/GaAs self-assembled quantum dots, optically active intersublevel transitions occur in the mid-infrared spectral range. These transitions can provide a new insight on the physics of semiconductor quantum dots and offer new opportunities to develop mid-infrared devices. A key feature characterizing intersublevel transitions is the coupling of the confined carriers to phonons. We show that the effect of the strong coupling regime for the electron–optical phonon interaction and the formation of mixed electron–phonon quasi-particles called polarons drastically affect and control the dynamical properties of quantum dots. The engineering of quantum dot relaxation rates through phonon coupling opens the route to the realization of new devices like mid-infrared polaron lasers. We finally show that the measurement of intersublevel absorption is not limited to quantum dot ensembles and that the intersublevel ultrasmall absorption of a single quantum dot can be measured with a nanometer scale resolution by using phonon emission as a signature of the absorption.

Publié le :
DOI : 10.1016/j.crhy.2008.10.005
Keywords: Quantum dots, Intersublevel transitions, Polaron, Mid-infrared
Mots-clés : Boîte quantique, Transitions intersousniveaux, Polaron, Moyen infrarouge

Philippe Boucaud 1 ; Sébastien Sauvage 1 ; Julien Houel 1

1 Institut d'Electronique Fondamentale, CNRS Université Paris-Sud XI, bâtiment 220, 91405 Orsay cedex, France 
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Philippe Boucaud; Sébastien Sauvage; Julien Houel. Intersublevel transitions in self-assembled quantum dots. Comptes Rendus. Physique, Recent advances in quantum dot physics / Nouveaux développements dans la physique des boîtes quantiques, Volume 9 (2008) no. 8, pp. 840-849. doi : 10.1016/j.crhy.2008.10.005. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/j.crhy.2008.10.005/

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