[Simulation multi-echelle des dispositifs à nanotube de carbone]
Ces dernières années, la compréhension et la simulation précise des dispositifs à base de nanotubes de carbone est devenue une tâche ambitieuse. Les outils de simulation conventionnels de la microélectronique sont nécessaires pour imaginer les performances et l'utilisation des transistors et des circuits à base de nanotubes, mais les modèles doivent être affinés pour décrire correctement la complexité de ces nouveaux types de dispositifs à l'échelle nanométrique. En effet, de nombreuses questions comme la résistance de contact, l'électrostatique en basse dimensionalité et les effets d'écrantage, ainsi que le dopage ou la fonctionnalisation des nanotubes, nécessitent des approches quantiques plus précises. Dans cet article, nous exposons nos progrès récents sur des simulations multi-échelles qui visent à connecter des calculs basés sur les premiers principes à la modélisation compacte, en passant par la comparaison entre l'approche Monte Carlo semi-classique et le transport quantique.
In recent years, the understanding and accurate simulation of carbon nanotube-based devices has become very challenging. Conventional simulation tools of microelectronics are necessary to envision the performance and use of nanotube transistors and circuits, but the models need to be refined to properly describe the full complexity of such novel type of devices at the nanoscale. Indeed, many issues such as contact resistance, low dimensional electrostatics and screening effects, as well as nanotube doping or functionalization, demand for more accurate quantum approaches. In this article, we review our recent progress on multiscale simulations which aim at bridging first principles calculations with compact modelling, including the comparison between semi-classical Monte Carlo and quantum transport approaches.
Mot clés : Nanotubes de carbone, Simulation, Tranport électronique, Transistors, Circuits, Calculs ab initio
C. Adessi 1 ; R. Avriller 2 ; X. Blase 3 ; A. Bournel 4 ; H. Cazin d'Honincthun 4 ; P. Dollfus 4 ; S. Frégonèse 5 ; S. Galdin-Retailleau 4 ; A. López-Bezanilla 6 ; C. Maneux 5 ; H. Nha Nguyen 4 ; D. Querlioz 4 ; S. Roche 6 ; F. Triozon 7 ; T. Zimmer 5
@article{CRPHYS_2009__10_4_305_0,
author = {C. Adessi and R. Avriller and X. Blase and A. Bournel and H. Cazin d'Honincthun and P. Dollfus and S. Fr\'egon\`ese and S. Galdin-Retailleau and A. L\'opez-Bezanilla and C. Maneux and H. Nha Nguyen and D. Querlioz and S. Roche and F. Triozon and T. Zimmer},
title = {Multiscale simulation of carbon nanotube devices},
journal = {Comptes Rendus. Physique},
pages = {305--319},
publisher = {Elsevier},
volume = {10},
number = {4},
year = {2009},
doi = {10.1016/j.crhy.2009.05.004},
language = {en},
}
TY - JOUR AU - C. Adessi AU - R. Avriller AU - X. Blase AU - A. Bournel AU - H. Cazin d'Honincthun AU - P. Dollfus AU - S. Frégonèse AU - S. Galdin-Retailleau AU - A. López-Bezanilla AU - C. Maneux AU - H. Nha Nguyen AU - D. Querlioz AU - S. Roche AU - F. Triozon AU - T. Zimmer TI - Multiscale simulation of carbon nanotube devices JO - Comptes Rendus. Physique PY - 2009 SP - 305 EP - 319 VL - 10 IS - 4 PB - Elsevier DO - 10.1016/j.crhy.2009.05.004 LA - en ID - CRPHYS_2009__10_4_305_0 ER -
%0 Journal Article %A C. Adessi %A R. Avriller %A X. Blase %A A. Bournel %A H. Cazin d'Honincthun %A P. Dollfus %A S. Frégonèse %A S. Galdin-Retailleau %A A. López-Bezanilla %A C. Maneux %A H. Nha Nguyen %A D. Querlioz %A S. Roche %A F. Triozon %A T. Zimmer %T Multiscale simulation of carbon nanotube devices %J Comptes Rendus. Physique %D 2009 %P 305-319 %V 10 %N 4 %I Elsevier %R 10.1016/j.crhy.2009.05.004 %G en %F CRPHYS_2009__10_4_305_0
C. Adessi; R. Avriller; X. Blase; A. Bournel; H. Cazin d'Honincthun; P. Dollfus; S. Frégonèse; S. Galdin-Retailleau; A. López-Bezanilla; C. Maneux; H. Nha Nguyen; D. Querlioz; S. Roche; F. Triozon; T. Zimmer. Multiscale simulation of carbon nanotube devices. Comptes Rendus. Physique, Volume 10 (2009) no. 4, pp. 305-319. doi : 10.1016/j.crhy.2009.05.004. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/j.crhy.2009.05.004/
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