Laser diode reliability: crystal defects and degradation modes

Juan Jiménez

doi:10.1016/S1631-0705(03)00097-5

Laser diode reliability: crystal defects and degradation modes
[Fiabilité des diodes laser : défauts cristallins et modes de dégradation]

Présenté par : Guy Laval

Juan Jiménez ¹

¹ Fı́sica de la Materia Condensada, ETS Ingenieros Industriales, 47011 Valladolid, Spain

Comptes Rendus. Physique, semiconductor lasers, Volume 4 (2003) no. 6, pp. 663-673.

Résumé
Abstract

L'analyse de la dégradation est fondamentale pour l'optimisation des diodes lasers de puissance. La dégradation des lasers se présente sous trois modes : rapide, graduelle et catastrophique. Elle peut se produire à l'intérieur de la cavité ou au voisinage des facettes. Chaque mode de dégradation présente sa propre signature et des défauts cristallins différents sont associés à chacun de ces modes. Les principaux mécanismes de dégradation sont analysés en montrant les relations entre les modes de dégradation, les propriétés des matériaux et la structure des lasers.

Degradation analysis is a crucial issue for the improvement of high power laser diodes. Degradation occurs in three different modes: rapid, gradual and catastrophic. It can be located inside the cavity or at the facet mirrors. Each type of degradation presents its own signature and different crystal defects appear associated with them. The main physical mechanisms responsible for laser degradation are analysed showing the relation between the main degradation modes and the different materials properties of the laser structures.

Reçu le : 2003-01-04
Accepté le : 2003-01-08
Publié le : 2003-07-01

DOI : 10.1016/S1631-0705(03)00097-5

Keywords: Degradation, Catastrophic degradation, Dark line defects, Dark spot defects, Recombination enhanced defect reaction, Dislocation climb, Dislocation glide
Mots-clés : Dégradation, Dégradation catastrophique, Défauts lignes noires, Défauts points noirs, Recombinaison, Montée de dislocations, Glissement de dislocations

Affiliations des auteurs :

Juan Jiménez ¹

¹ Fı́sica de la Materia Condensada, ETS Ingenieros Industriales, 47011 Valladolid, Spain

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Juan Jiménez. Laser diode reliability: crystal defects and degradation modes. Comptes Rendus. Physique, semiconductor lasers, Volume 4 (2003) no. 6, pp. 663-673. doi : 10.1016/S1631-0705(03)00097-5. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/S1631-0705(03)00097-5/

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Sanna Ranta; Miki Tavast; Tomi Leinonen; Ryan Epstein; Mircea Guina Narrow linewidth 1118/559 nm VECSEL based on strain compensated GaInAs/GaAs quantum-wells for laser cooling of Mg-ions, Optical Materials Express, Volume 2 (2012) no. 8, p. 1011 | DOI:10.1364/ome.2.001011
T. Leinonen; V.-M. Korpijärvi; A. Härkönen; M. Guina 7.4 W yellow GaInNAs-based semiconductor disk laser, Electronics Letters, Volume 47 (2011) no. 20, p. 1139 | DOI:10.1049/el.2011.2282
Li Fan; Chuanshun Cao; G. Thaler; B. Caliva; I. Ai; S. Das; R. Walker; Linfei Zeng; M. McElhinney; P. Thiagarajan Record High-Temperature Long-Pulse Operation of 8xx-nm Diode Laser Bar with Aluminum-Free Active Region, IEEE Journal of Selected Topics in Quantum Electronics, Volume 17 (2011) no. 6, p. 1727 | DOI:10.1109/jstqe.2011.2115234
G. Tandoi; C. Ironside; A. C. Bryce Non-Absorbing Mirrors for Quantum Well Colliding Pulse Mode-Locked Lasers, IEEE Photonics Technology Letters (2011) | DOI:10.1109/lpt.2010.2103935
L. Kirkup; W. Kalceff; G. McCredie Effect of injection current on the repeatability of laser diode junction voltage-temperature measurements, Journal of Applied Physics, Volume 101 (2007) no. 2 | DOI:10.1063/1.2427097
J. Jiménez; M. Avella; O. Martínez Raman and luminescence probes for the study of compound semiconductors, Thin Solid Films, Volume 515 (2007) no. 10, p. 4412 | DOI:10.1016/j.tsf.2006.07.113
Antti Tukiainen; Lauri Toikkanen; Matti Haavisto; Vesa Erojrvi; Ville Rimpilinen; Jukka Viheril; Markus Pessa AlInP–AlGaInP Quantum-Well Lasers Grown by Molecular Beam Epitaxy, IEEE Photonics Technology Letters, Volume 18 (2006) no. 21, p. 2257 | DOI:10.1109/lpt.2006.884730
M. Avella; M. Pommiés; J. Jiménez; M. Bettiati; G. Hallais; V. Lemonon Cathodoluminescence spectral imaging as a technique for the study of cavity degradation of high-power QW lasers, Materials Science in Semiconductor Processing, Volume 9 (2006) no. 1-3, p. 204 | DOI:10.1016/j.mssp.2006.01.061
M. Pommiès; M. Avella; E. Cánovas; J. Jiménez; T. Fillardet; M. Oudart; J. Nagle Cation intermixing at quantum well/barriers interfaces in aged AlGaAs-based high-power laser diodes bars, Applied Physics Letters, Volume 86 (2005) no. 13 | DOI:10.1063/1.1891286

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