Non-volatile magnetic random access memories (MRAM)

Ricardo C. Sousa; I. Lucian Prejbeanu

doi:10.1016/j.crhy.2005.10.007

Non-volatile magnetic random access memories (MRAM)

Ricardo C. Sousa ¹ ; I. Lucian Prejbeanu ¹

¹ Spintec (URA 2512 CEA/CNRS), 17, rue des Martyrs, 38054 Grenoble, France

Comptes Rendus. Physique, Spintronics, Volume 6 (2005) no. 9, pp. 1013-1021.

Abstract
Résumé

Magnetic random access memories (MRAM) are a new non-volatile memory technology trying establish itself as a mainstream technology. This paper reviews briefly the most important progress realized in the past 10 years. Basic MRAM cell operation is described as well as the main subsisting design challenges. Special emphasis is placed on bit write strategies and their respective scaling perspectives.

Les mémoires magnétiques à access aléatoire (MRAM) sont une nouvelle technologie de mémoires non volatiles cherchant à s'imposer comme une technologie majeure. Cet article fait un resumé des progrès les plus importants realisés au cours des 10 dernières années. Le mode de fonctionnement des MRAM est décrit ainsi que les défis qui subsistent encore pour leur réalisation. Les diverses stratégies d'écriture et leurs perspectives en termes de réduction de taille de cellule sont discutées.

Published online: 2005-11-01

DOI: 10.1016/j.crhy.2005.10.007

Keywords: MRAM, Non-volatile, Magnetic tunnel junction, Memory
Mots-clés : MRAM, Jonctions tunnel magnétiques, Mémoire

Author's affiliations:

Ricardo C. Sousa ¹; I. Lucian Prejbeanu ¹

¹ Spintec (URA 2512 CEA/CNRS), 17, rue des Martyrs, 38054 Grenoble, France

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Ricardo C. Sousa; I. Lucian Prejbeanu. Non-volatile magnetic random access memories (MRAM). Comptes Rendus. Physique, Spintronics, Volume 6 (2005) no. 9, pp. 1013-1021. doi : 10.1016/j.crhy.2005.10.007. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/j.crhy.2005.10.007/

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