Spin injection into semiconductors: towards a semiconductor-based spintronic device

Ahmad Bsiesy

doi:10.1016/j.crhy.2005.11.003

Spin injection into semiconductors: towards a semiconductor-based spintronic device
[Injection du spin dans des semi-conducteurs : vers un composant spintronique basé sur des semi-conducteurs]

Ahmad Bsiesy ^1,²

¹ SPINTEC URA 2512 CEA/CNRS, CEA – Grenoble, 17 avenue des Martyrs, 38054 Grenoble cedex, France
² Université Joseph Fourier – Grenoble I, BP 53, 38041 Grenoble cedex, France

Comptes Rendus. Physique, Spintronics, Volume 6 (2005) no. 9, pp. 1022-1026.

Résumé
Abstract

L'électronique de spin ou la « spintronique » est un domaine de recherche qui connaît une forte évolution grâce aux nombreuses applications qui sont soient déjà mises en œuvre dans des composants disponibles sur le marché ou en cours de développement. L'extension de la spintronique aux semiconducteurs présente des perspectives d'applications très prometteuses grâce à la possibilité d'associer spintronique et électronique conventionnelle. Ceci passe par une étude fondamentale des mécanismes d'injection et de collection de spins dans les semi-conducteurs. L'objectif de cet article est de faire le point sur les principaux résultats obtenus dans ce domaine.

Spin electronic or spintronics is a rapidly growing research field aimed at realizing new high-performance devices that takes advantage of the electron spin as well as of its charge. It is expected that the extension of spintronics to the semiconductors would lead to the development of a new class of functional devices. To do so, the mechanisms at the origin of spin injection and collection with the semiconductors have to be studied first. The aim of this article is to summarize the main results that have been obtained recently in this field.

Publié le : 2005-11-01

DOI : 10.1016/j.crhy.2005.11.003

Keywords: Spintronics, Semiconductors, Spin injection, Spin collection
Mots-clés : Spintronique, Semi-conducteur, Injection de spin, Collection de spin

Affiliations des auteurs :

Ahmad Bsiesy ^{1, 2}

¹ SPINTEC URA 2512 CEA/CNRS, CEA – Grenoble, 17 avenue des Martyrs, 38054 Grenoble cedex, France
² Université Joseph Fourier – Grenoble I, BP 53, 38041 Grenoble cedex, France

@article{CRPHYS_2005__6_9_1022_0,
     author = {Ahmad Bsiesy},
     title = {Spin injection into semiconductors: towards a semiconductor-based spintronic device},
     journal = {Comptes Rendus. Physique},
     pages = {1022--1026},
     publisher = {Elsevier},
     volume = {6},
     number = {9},
     year = {2005},
     doi = {10.1016/j.crhy.2005.11.003},
     language = {en},
}

TY  - JOUR
AU  - Ahmad Bsiesy
TI  - Spin injection into semiconductors: towards a semiconductor-based spintronic device
JO  - Comptes Rendus. Physique
PY  - 2005
SP  - 1022
EP  - 1026
VL  - 6
IS  - 9
PB  - Elsevier
DO  - 10.1016/j.crhy.2005.11.003
LA  - en
ID  - CRPHYS_2005__6_9_1022_0
ER  -

%0 Journal Article
%A Ahmad Bsiesy
%T Spin injection into semiconductors: towards a semiconductor-based spintronic device
%J Comptes Rendus. Physique
%D 2005
%P 1022-1026
%V 6
%N 9
%I Elsevier
%R 10.1016/j.crhy.2005.11.003
%G en
%F CRPHYS_2005__6_9_1022_0

Ahmad Bsiesy. Spin injection into semiconductors: towards a semiconductor-based spintronic device. Comptes Rendus. Physique, Spintronics, Volume 6 (2005) no. 9, pp. 1022-1026. doi : 10.1016/j.crhy.2005.11.003. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/j.crhy.2005.11.003/

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