Comptes Rendus
Optical lithography—a historical perspective
[Lithographie optique—une vue historique]
Comptes Rendus. Physique, Volume 7 (2006) no. 8, pp. 844-857.

La lithographie optique (aussi appelée photolithographie) a été le facteur clé pour réduire les tailles de motifs des circuits intégrés, ce qui a permis une croissance exponentielle de l'industrie du semiconducteur. Souvent par le passé on a prédit la fin de la lithographie optique, mais cette technologie est et devrait rester pour les quelques années qui viennent la voie privilégiée. Cet article décrit les percées qui ont permis à la photolithographie de satisfaire toutes les exigences d'une production avancée de volume. Basée sur quelques principes d'optique, cette technologie a fait évoluer de manière significative l'outil d'exposition et la résine photosensible, en réduisant la longueur d'onde d'exposition et plus récemment en tirant parti de la cohérence de la lumière et en corrigeant les effets de proximité, en particulier par une conception de masques avancée et des techniques d'illumination optimisées. Enfin cet article discutera de quelques tendances récentes en photolithographie.

Optical lithography (also called photolithography) has been the key enabler for scaling feature sizes of integrated circuits, allowing the exponential growth of the semiconductor industry. Often in the past the end of optical lithography has been predicted but this technology is, and is expected to stay, mainstream for the next several years. This article will describe the breakthroughs which allowed photolithography fulfilling all the requirements of advanced volume manufacturing. Based on few principles of optics, this technology went through significant evolutions in the exposure tool and in the photoresist, in reducing the exposure wavelength and more recently by taking advantage of the light coherence and correcting proximity effects, esp. through advanced mask design and optimized illumination techniques. Finally this article will discuss some recent trends in photolithography.

Publié le :
DOI : 10.1016/j.crhy.2006.10.007
Keywords: Optical lithography, Photoresist, Phase shifting mask, Optical proximity correction, 157 nm lithography, Immersion lithography, EUV lithography
Mot clés : Lithographie optique, Résine photosensible, Masque à décalage de phase, Correction d'effets de proximité, Lithographie 157 nm, Lithographie en immersion, Lithographie extrême UV
Kurt Ronse 1

1 IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
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Kurt Ronse. Optical lithography—a historical perspective. Comptes Rendus. Physique, Volume 7 (2006) no. 8, pp. 844-857. doi : 10.1016/j.crhy.2006.10.007. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/j.crhy.2006.10.007/

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