Comptes Rendus
no. 2-3
Growth of large size diamond single crystals by plasma assisted chemical vapour deposition: Recent achievements and remaining challenges
[Croissance de monocristaux de diamant de grande dimension par dépôt chimique en phase vapeur assisté par plasma : Réalisations récentes et défis à venir]
Alexandre Tallaire1  ; Jocelyn Achard1 ; François Silva1 ; Ovidiu Brinza1 ; Alix Gicquel1
1 Université Paris-13, Sorbonne Paris Cité, Laboratoire des sciences des procédés et des matériaux, CNRS (UPR 3407), 93430 Villetaneuse, France
Comptes Rendus. Physique, Volume 14 (2013) no. 2-3, pp. 169-184.

Le diamant est un matériau aux propriétés hors du commun permettant dʼenvisager un grand nombre dʼapplications, parmi lesquelles des fenêtres optiques, des dispositifs dʼélectronique de puissance ou dʼinformation quantique, des détecteurs de radiation ou de substances biologiques. Les énormes progrès de la technique de synthèse par dépôt chimique en phase vapeur assisté par plasma micro-onde ont permis la réalisation de monocristaux de qualité optique jusquʼà plusieurs millimètres dʼépaisseur et présentant une bonne transparence. Néanmoins, les exigences en termes de dimensions, de pureté et qualité cristalline sont de plus en plus élevées pour les applications visées, et la croissance se heurte alors à un certain nombre de verrous technologiques ou scientifiques. Dans ce papier, après une rapide description des principes de la technique de croissance, les problèmes de lʼaugmentation des dimensions verticales et latérales des cristaux, du contrôle des défauts ponctuels et étendus ainsi que de la modulation de la conductivité par lʼajout dʼimpuretés dopantes seront abordés et des solutions possibles seront alors proposées.

Diamond is a material with outstanding properties making it particularly suited for high added-value applications such as optical windows, power electronics, radiation detection, quantum information, bio-sensing and many others. Tremendous progresses in its synthesis by microwave plasma assisted chemical vapour deposition have allowed obtaining single crystal optical-grade material with thicknesses of up to a few millimetres. However the requirements in terms of size, purity and crystalline quality are getting more and more difficult to achieve with respect to the forecasted applications, thus pushing the synthesis method to its scientific and technological limits. In this paper, after a short description of the operating principles of the growth technique, the challenges of increasing crystal dimensions both laterally and vertically, decreasing and controlling point and extended defects as well as modulating crystal conductivity by an efficient doping will be detailed before offering some insights into ways to overcome them.

Publié le :
DOI : 10.1016/j.crhy.2012.10.008
Keywords: Diamond, Crystal growth, Chemical vapour deposition, Microwave plasma, Defects, Doping
Mot clés : Diamant, Croissance cristalline, Dépôt chimique en phase vapeur, Plasma micro-onde, Défauts, Dopage

Alexandre Tallaire 1 ; Jocelyn Achard 1 ; François Silva 1 ; Ovidiu Brinza 1 ; Alix Gicquel 1

1 Université Paris-13, Sorbonne Paris Cité, Laboratoire des sciences des procédés et des matériaux, CNRS (UPR 3407), 93430 Villetaneuse, France 
@article{CRPHYS_2013__14_2-3_169_0,
     author = {Alexandre Tallaire and Jocelyn Achard and Fran\c{c}ois Silva and Ovidiu Brinza and Alix Gicquel},
     title = {Growth of large size diamond single crystals by plasma assisted chemical vapour deposition: {Recent} achievements and remaining challenges},
     journal = {Comptes Rendus. Physique},
     pages = {169--184},
     publisher = {Elsevier},
     volume = {14},
     number = {2-3},
     year = {2013},
     doi = {10.1016/j.crhy.2012.10.008},
     language = {en},
}
TY  - JOUR
AU  - Alexandre Tallaire
AU  - Jocelyn Achard
AU  - François Silva
AU  - Ovidiu Brinza
AU  - Alix Gicquel
TI  - Growth of large size diamond single crystals by plasma assisted chemical vapour deposition: Recent achievements and remaining challenges
JO  - Comptes Rendus. Physique
PY  - 2013
SP  - 169
EP  - 184
VL  - 14
IS  - 2-3
PB  - Elsevier
DO  - 10.1016/j.crhy.2012.10.008
LA  - en
ID  - CRPHYS_2013__14_2-3_169_0
ER  - 
%0 Journal Article
%A Alexandre Tallaire
%A Jocelyn Achard
%A François Silva
%A Ovidiu Brinza
%A Alix Gicquel
%T Growth of large size diamond single crystals by plasma assisted chemical vapour deposition: Recent achievements and remaining challenges
%J Comptes Rendus. Physique
%D 2013
%P 169-184
%V 14
%N 2-3
%I Elsevier
%R 10.1016/j.crhy.2012.10.008
%G en
%F CRPHYS_2013__14_2-3_169_0
Alexandre Tallaire; Jocelyn Achard; François Silva; Ovidiu Brinza; Alix Gicquel. Growth of large size diamond single crystals by plasma assisted chemical vapour deposition: Recent achievements and remaining challenges. Comptes Rendus. Physique, Volume 14 (2013) no. 2-3, pp. 169-184. doi : 10.1016/j.crhy.2012.10.008. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/j.crhy.2012.10.008/

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