Comptes Rendus
no. 2-3
Growth of large size diamond single crystals by plasma assisted chemical vapour deposition: Recent achievements and remaining challenges
[Croissance de monocristaux de diamant de grande dimension par dépôt chimique en phase vapeur assisté par plasma : Réalisations récentes et défis à venir]
Alexandre Tallaire1  ; Jocelyn Achard1 ; François Silva1 ; Ovidiu Brinza1 ; Alix Gicquel1
1 Université Paris-13, Sorbonne Paris Cité, Laboratoire des sciences des procédés et des matériaux, CNRS (UPR 3407), 93430 Villetaneuse, France
Comptes Rendus. Physique, Crystal growth / Croissance cristalline, Volume 14 (2013) no. 2-3, pp. 169-184.

Le diamant est un matériau aux propriétés hors du commun permettant dʼenvisager un grand nombre dʼapplications, parmi lesquelles des fenêtres optiques, des dispositifs dʼélectronique de puissance ou dʼinformation quantique, des détecteurs de radiation ou de substances biologiques. Les énormes progrès de la technique de synthèse par dépôt chimique en phase vapeur assisté par plasma micro-onde ont permis la réalisation de monocristaux de qualité optique jusquʼà plusieurs millimètres dʼépaisseur et présentant une bonne transparence. Néanmoins, les exigences en termes de dimensions, de pureté et qualité cristalline sont de plus en plus élevées pour les applications visées, et la croissance se heurte alors à un certain nombre de verrous technologiques ou scientifiques. Dans ce papier, après une rapide description des principes de la technique de croissance, les problèmes de lʼaugmentation des dimensions verticales et latérales des cristaux, du contrôle des défauts ponctuels et étendus ainsi que de la modulation de la conductivité par lʼajout dʼimpuretés dopantes seront abordés et des solutions possibles seront alors proposées.

Diamond is a material with outstanding properties making it particularly suited for high added-value applications such as optical windows, power electronics, radiation detection, quantum information, bio-sensing and many others. Tremendous progresses in its synthesis by microwave plasma assisted chemical vapour deposition have allowed obtaining single crystal optical-grade material with thicknesses of up to a few millimetres. However the requirements in terms of size, purity and crystalline quality are getting more and more difficult to achieve with respect to the forecasted applications, thus pushing the synthesis method to its scientific and technological limits. In this paper, after a short description of the operating principles of the growth technique, the challenges of increasing crystal dimensions both laterally and vertically, decreasing and controlling point and extended defects as well as modulating crystal conductivity by an efficient doping will be detailed before offering some insights into ways to overcome them.

Publié le :
DOI : 10.1016/j.crhy.2012.10.008
Keywords: Diamond, Crystal growth, Chemical vapour deposition, Microwave plasma, Defects, Doping
Mots-clés : Diamant, Croissance cristalline, Dépôt chimique en phase vapeur, Plasma micro-onde, Défauts, Dopage

Alexandre Tallaire 1 ; Jocelyn Achard 1 ; François Silva 1 ; Ovidiu Brinza 1 ; Alix Gicquel 1

1 Université Paris-13, Sorbonne Paris Cité, Laboratoire des sciences des procédés et des matériaux, CNRS (UPR 3407), 93430 Villetaneuse, France 
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Alexandre Tallaire; Jocelyn Achard; François Silva; Ovidiu Brinza; Alix Gicquel. Growth of large size diamond single crystals by plasma assisted chemical vapour deposition: Recent achievements and remaining challenges. Comptes Rendus. Physique, Crystal growth / Croissance cristalline, Volume 14 (2013) no. 2-3, pp. 169-184. doi : 10.1016/j.crhy.2012.10.008. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/j.crhy.2012.10.008/

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  • Jacob N. Lenz; Scott K. Perryman; Dmitro J. Martynowych; David A. Hopper; Sean M. Oliver Hardware Trojan Detection Potential and Limits with the Quantum Diamond Microscope, ACM Journal on Emerging Technologies in Computing Systems, Volume 21 (2025) no. 1, p. 1 | DOI:10.1145/3711712
  • Kai Li; Jun Zhang; Peicheng Mo; Jiarong Chen; Xiaoyi Pan; Chao Chen Optimizing single crystal diamond mosaic growth: A study on seed thickness variation and pre-growth treatment, Journal of Crystal Growth, Volume 649 (2025), p. 127953 | DOI:10.1016/j.jcrysgro.2024.127953
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  • Alexander Shames; Alexander Panich; Lonia Friedlander; Haim Cohen; James Butler; Raymond Moreh Magnetic Resonance Study of Bulky CVD Diamond Disc, Materials, Volume 17 (2024) no. 8, p. 1871 | DOI:10.3390/ma17081871
  • Senchuan Ding; Jinfeng Zhang; Kai Su; Zeyang Ren; Junfei Chen; Zhiqing Yang; Jincheng Zhang; Yue Hao Single-crystal diamond grown through high-power-density epitaxy used for a high-performance radiation detector, Science China Materials, Volume 67 (2024) no. 7, p. 2329 | DOI:10.1007/s40843-024-2955-x
  • Karim Ouaras; Guillaume Lombardi; Khaled Hassouni Nanoparticles synthesis in microwave plasmas: peculiarities and comprehensive insight, Scientific Reports, Volume 14 (2024) no. 1 | DOI:10.1038/s41598-023-49818-3
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  • V.Yu. Yurov; A.P. Bolshakov; I.A. Fedorova; A.F. Popovich; K.N. Zyablyuk; A.S. Altakhov; D.N. Sovyk; P.A. Pivovarov; P.V. Volkov; V.G. Ralchenko Control of silicon dioxide etching rate in hydrogen microwave plasma by addition of oxygen, Applied Surface Science, Volume 612 (2023), p. 155834 | DOI:10.1016/j.apsusc.2022.155834
  • Divine Vangu; Hélène Bureau; Hicham Khodja; Matthieu Charrondiere; Imène Esteve; Keevin Béneut; Laurent Remusat; Eloïse Gaillou; Pierre Cartigny; Jean-Claude Bouillard Combination of ERDA, FTIR spectroscopy and NanoSIMS for the characterization of hydrogen incorporation in natural diamonds, Diamond and Related Materials, Volume 136 (2023), p. 110007 | DOI:10.1016/j.diamond.2023.110007
  • Guojian Yang; Zhiyong Peng; Yuezhong Wang; Peng Sun; Peng Shang; Weiyan Lian; Xiao Yang; Huasong Liu; Guoyong Yang; Mingyang Yang; Qingwei Yan; Cheng-Te Lin; Zhanpeng Lv; Nan Jiang Numerical study of thermal shock on infrared windows and their composites with diamond coatings under harsh conditions, Diamond and Related Materials, Volume 137 (2023), p. 110117 | DOI:10.1016/j.diamond.2023.110117
  • Ma Yuanchen; Ren Zeyang; Yang Shiqi; Su Kai; Zhang Jinfeng; Yang Xiaoli; Ning Xiuxiu; Zhang Jincheng; Hao Yue High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3dielectric, Functional Diamond, Volume 3 (2023) no. 1 | DOI:10.1080/26941112.2023.2219687
  • A. A. Emelyanov; M. Yu. Plotnilkov; N. I. Timoshenko; I. B. Yudin GAS-JET SYNTHESIS OF DIAMOND COATINGS ON SILICON SUBSTRATES FROM AN H2 + CH4 + Ar MIXTURE ACTIVATED IN A MICROWAVE DISCHARGE, Journal of Applied Mechanics and Technical Physics, Volume 64 (2023) no. 5, p. 748 | DOI:10.1134/s0021894423050024
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  • Sergey A. Bogdanov; Anatoly L. Vikharev; Aleksey M. Gorbachev; Dmitry B. Radishev; Mikhail A. Lobaev Nongrowth regime in microwave chemical vapor deposition reactor due to formation of plasma nonhomogeneity, Plasma Processes and Polymers, Volume 20 (2023) no. 10 | DOI:10.1002/ppap.202300073
  • Zeyang Ren; Yuanchen Ma; Shiqi Yang; Xinxin Yu; Jinfeng Zhang; Kai Su; Jincheng Zhang; Hanxue Wang; Yue Hao High frequency single crystalline diamond MOSFET with high temperature (300 °C) ALD grown Al2O3 dielectric, Results in Physics, Volume 49 (2023), p. 106517 | DOI:10.1016/j.rinp.2023.106517
  • Yongfeng Qu; Haiyang Bai; Wenbo Hu; Yuan Yuan; Shengli Wu; Hongxing Wang; Huiqing Fan Effects of argon plasma pretreatment of Si wafers on Si-Si bonding based on Mo/Au interlayers, Surface Topography: Metrology and Properties, Volume 11 (2023) no. 2, p. 025013 | DOI:10.1088/2051-672x/acd569
  • A. A. Emelyanov; V. A. Pinaev; M. Yu. Plotnikov; A. K. Rebrov; N. I. Timoshenko; I. B. Yudin Effect of argon on microwave plasma chemical vapor deposition of diamond coatings from an H2+CH4+Ar mixture activated in a microwave discharge, Thermophysics and Aeromechanics, Volume 30 (2023) no. 3, p. 393 | DOI:10.1134/s0869864323030010
  • В. Рипенко; Е. Балзовский; С. Смирнов; С. Линник; Е. Липатов, 8th International Congress on Energy Fluxes and Radiation Effects (2022), p. 1511 | DOI:10.56761/efre2022.n4-p-911101
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  • Priyadharshini Balasubramanian; Christian Osterkamp; Ovidiu Brinza; Maxime Rollo; Isabelle Robert-Philip; Philippe Goldner; Vincent Jacques; Fedor Jelezko; Jocelyn Achard; Alexandre Tallaire Enhancement of the creation yield of NV ensembles in a chemically vapour deposited diamond, Carbon, Volume 194 (2022), p. 282 | DOI:10.1016/j.carbon.2022.04.005
  • Eric Y. Li; Elluz Pacheco; Andrew F. Zhou; Peter X. Feng Nanostructured Diamond Composites for Multifunctional Sensing Applications, Chemosensors, Volume 10 (2022) no. 11, p. 488 | DOI:10.3390/chemosensors10110488
  • P. Hazdra; A. Laposa; Z. Šobáň; J. Voves; N. Lambert; M. Davydova; V. Povolný; A. Taylor; V. Mortet Low-resistance ohmic contacts on boron-doped 113 oriented homoepitaxial diamond layers, Diamond and Related Materials, Volume 121 (2022), p. 108797 | DOI:10.1016/j.diamond.2021.108797
  • Jiao Fu; Alon Hoffman; Mohan Kumar Kuntumalla; Hong-xing Wang; Daming Chen; Albert Mosyak; Gilad Yossifon Investigation of the cooling enhancement of a single crystal diamond heat sink with embedded microfluidic channels, Diamond and Related Materials, Volume 130 (2022), p. 109470 | DOI:10.1016/j.diamond.2022.109470
  • Lianxi Mu; Kai Su; Tingting Hu; Jinlong Liu; Jinfeng Zhang; Liangxian Chen; Junjun Wei; Xiaoping Ouyang; Chengming Li High charge collection efficiency detector based on plasma purified high-quality diamond, Diamond and Related Materials, Volume 130 (2022), p. 109527 | DOI:10.1016/j.diamond.2022.109527
  • A. K. Rebrov; A. A. Emel’yanov; V. A. Pinaev; M. Yu. Plotnikov; N. I. Timoshenko; I. B. Yudin Gas-Jet Synthesis of Diamond Coatings from a H2+CH4+Ar Mixture Activated in a Microwave Discharge, Doklady Physics, Volume 67 (2022) no. 7, p. 197 | DOI:10.1134/s1028335822070047
  • Lin Li; Chengchun Zhao; Shulong Zhang; Qiaorui Gong; Xiaohui Sun; Min Qian; Yin Hang Simulation of diamond synthesis by microwave plasma chemical vapor deposition with multiple substrates in a substrate holder, Journal of Crystal Growth, Volume 579 (2022), p. 126457 | DOI:10.1016/j.jcrysgro.2021.126457
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  • J. V. Silva Neto; J. S. Gómez; E. J. Corat; V. J. Trava-Airoldi Growth and Characterization of Polycrystalline CVD Diamond Films Obtained by MWPACVD at High Power 2,45GHz Microwave Discharge, Materials Research, Volume 25 (2022) no. suppl 2 | DOI:10.1590/1980-5373-mr-2022-0052
  • Heng Yu; Yi Li; Dong Wei; Gaofu Guo; Zhen Feng; Jinqin Ye; Qingqing Luo; Yaqiang Ma; Yanan Tang; Xianqi Dai Effect of intrinsic defects on the electronic structure and thermoelectricity of two-dimensional boron arsenide, Micro and Nanostructures, Volume 165 (2022), p. 207188 | DOI:10.1016/j.micrna.2022.207188
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  • Petro M. Lytvyn; Viktor V. Strelchuk; Andrii S. Nikolenko; Ihor M. Danylenko; Serii O. Ivakhnenko; Tetiana V. Kovalenko; Oleksandr G. Gontar; Serhii V. Malyuta Digital micro-photogrammetry in analysis and modeling habit and sectoral structure of real high-pressure high-temperature single-crystal diamonds, Review of Scientific Instruments, Volume 93 (2022) no. 3 | DOI:10.1063/5.0078022
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  • Ulrika F. S. D’Haenens-Johansson; James E. Butler; Andrey N. Katrusha Synthesis of Diamonds and Their Identification, Reviews in Mineralogy and Geochemistry, Volume 88 (2022) no. 1, p. 689 | DOI:10.2138/rmg.2022.88.13
  • Wei Cao; Zhibin Ma; Deng Gao; Qiuming Fu; Hongyang Zhao Homoepitaxial lateral growth of single-crystal diamond with eliminating PCD rim and enlarging surface area, Vacuum, Volume 197 (2022), p. 110820 | DOI:10.1016/j.vacuum.2021.110820
  • Chuanwen Geng; Zhibin Ma; Peng Zhao; Meihua Zeng; Xiaodong Zhang Effect of adding an upper-substrate holder in the quartz-tube MPCVD on plasma parameters, Vacuum, Volume 197 (2022), p. 110846 | DOI:10.1016/j.vacuum.2021.110846
  • V. Yu Yurov; A.P. Bolshakov; A.S. Altakhov; I.A. Fedorova; E.V. Zavedeev; A.F. Popovich; V.G. Ralchenko Hydrogen microwave plasma etching of silicon dioxide at high temperatures with in situ low-coherence interferometry control, Vacuum, Volume 199 (2022), p. 110939 | DOI:10.1016/j.vacuum.2022.110939
  • Yicun Li; Bing Dai; V.G. Ralchenko; Jilei Lyu; Xiaobin Hao; Jiwen Zhao; Sen Zhang; Kang Liu; Jiecai Han; A.P. Bolshakov; Jiaqi Zhu Growth of single-crystal diamond by microwave plasma CVD with high precursor utilization using cyclic gas injection and control of carbonaceous species content with optical emission spectroscopy, Vacuum, Volume 206 (2022), p. 111529 | DOI:10.1016/j.vacuum.2022.111529
  • Zeyang Ren; Yufei Xing; Dandan Lv; Jiamin Xu; Jinfeng Zhang; Jincheng Zhang; Kai Su; Chunfu Zhang; Hong Zhang; Qi He; Yue Hao H-diamond MOS interface properties and FET characteristics with high-temperature ALD-grown HfO2 dielectric, AIP Advances, Volume 11 (2021) no. 3 | DOI:10.1063/5.0044004
  • Yuhang Guo; Wei Zhu; Jiaxin Zhao; Shengran Lin; Yuanjie Yang; Liren Lou; Guanzhong Wang Electroluminescence of NV by impact excitation and Stark shift in a MIM diamond structure, Applied Physics Letters, Volume 119 (2021) no. 25 | DOI:10.1063/5.0076762
  • Yu. N. Palyanov; A. F. Khokhryakov; I. N. Kupriyanov Crystallomorphological and Crystallochemical Indicators of Diamond Formation Conditions, Crystallography Reports, Volume 66 (2021) no. 1, p. 142 | DOI:10.1134/s1063774521010119
  • V. Mortet; A. Taylor; N. Lambert; Z. Gedeonová; L. Fekete; J. Lorinčik; L. Klimša; J. Kopeček; P. Hubík; Z. Šobáň; A. Laposa; M. Davydova; J. Voves; A. Pošta; V. Povolný; P. Hazdra Properties of boron-doped (113) oriented homoepitaxial diamond layers, Diamond and Related Materials, Volume 111 (2021), p. 108223 | DOI:10.1016/j.diamond.2020.108223
  • Xin Song; Hua Wang; Xinchang Wang; Fanghong Sun Coupling effects of methane concentration and nitrogen addition level on morphologies and properties of MPCVD diamond films on WC-Co substrates, Diamond and Related Materials, Volume 117 (2021), p. 108487 | DOI:10.1016/j.diamond.2021.108487
  • Ting Zhi; Tao Tao; Bin Liu; Xiwei Wang; Wenxiao Hu; Kai Chen; Zili Xie; Rong Zhang High quality CVD single crystal diamonds grown on nanorods patterned diamond seed, Diamond and Related Materials, Volume 119 (2021), p. 108605 | DOI:10.1016/j.diamond.2021.108605
  • Saifei Fan; Xianyi Lv; Hongxin Xu; Qiliang Wang The growth behavior and surface performance enhancement of diamond film deposited on polycrystalline diamond compact, Diamond and Related Materials, Volume 120 (2021), p. 108682 | DOI:10.1016/j.diamond.2021.108682
  • Guoyang Shu; Bing Dai; Andrey Bolshakov; Weihua Wang; Yang Wang; Kang Liu; Jiwen Zhao; Jiecai Han; Jiaqi Zhu Coessential-connection by microwave plasma chemical vapor deposition: a common process towards wafer scale single crystal diamond, Functional Diamond, Volume 1 (2021) no. 1, p. 47 | DOI:10.1080/26941112.2020.1869511
  • Maurizio Angelone; Claudio Verona Properties of Diamond-Based Neutron Detectors Operated in Harsh Environments, Journal of Nuclear Engineering, Volume 2 (2021) no. 4, p. 422 | DOI:10.3390/jne2040032
  • Andreo Crnjac; Mauricio R Ramos; Natko Skukan; Michal Pomorski; Milko Jakšić Charge transport in single crystal CVD diamond studied at high temperatures, Journal of Physics D: Applied Physics, Volume 54 (2021) no. 46, p. 465103 | DOI:10.1088/1361-6463/ac1e4e
  • Guoqing Shao; Juan Wang; Shumiao Zhang; Yanfeng Wang; Wei Wang; Hong-Xing Wang Surface Morphology and Microstructure Evolution of Single Crystal Diamond during Different Homoepitaxial Growth Stages, Materials, Volume 14 (2021) no. 20, p. 5964 | DOI:10.3390/ma14205964
  • Qi Lu; Huaiyu Gong; Qingfeng Guo; Xuren Huang; Jiayi Cai Gemological Characteristic Difference between Colorless CVD Synthetic Diamonds and Natural Diamonds, Materials, Volume 14 (2021) no. 20, p. 6225 | DOI:10.3390/ma14206225
  • Zitao Shi; Qilong Yuan; Yuezhong Wang; Kazuhito Nishimura; Guojian Yang; Bingxue Zhang; Nan Jiang; He Li Optical Properties of Bulk Single-Crystal Diamonds at 80–1200 K by Vibrational Spectroscopic Methods, Materials, Volume 14 (2021) no. 23, p. 7435 | DOI:10.3390/ma14237435
  • Andrew M Edmonds; Connor A Hart; Matthew J Turner; Pierre-Olivier Colard; Jennifer M Schloss; Kevin S Olsson; Raisa Trubko; Matthew L Markham; Adam Rathmill; Ben Horne-Smith; Wilbur Lew; Arul Manickam; Scott Bruce; Peter G Kaup; Jon C Russo; Michael J DiMario; Joseph T South; Jay T Hansen; Daniel J Twitchen; Ronald L Walsworth Characterisation of CVD diamond with high concentrations of nitrogen for magnetic-field sensing applications, Materials for Quantum Technology, Volume 1 (2021) no. 2, p. 025001 | DOI:10.1088/2633-4356/abd88a
  • Benjamin D. Wood; Gavin W. Morley; Kai Bongs; Miles J. Padgett; Alessandro Fedrizzi; Alberto Politi, Quantum Technology: Driving Commercialisation of an Enabling Science II (2021), p. 24 | DOI:10.1117/12.2601348
  • Chuanwen Geng; Peng Zhao; Meihua Zeng; Xingyue Jin; Miroljub Vilotijevic; Xiaodong Zhang Synthesis of diamond films on W mono-blocks by MWCVD for modification of fusion materials, Surface and Coatings Technology, Volume 421 (2021), p. 127392 | DOI:10.1016/j.surfcoat.2021.127392
  • Gianpiero Colonna; Carlos D. Pintassilgo; Francesco Pegoraro; Andrea Cristofolini; Arturo Popoli; Gabriele Neretti; Alix Gicquel; Olivier Duigou; Thomas Bieber; Khaled Hassouni; Laura Laguardia Theoretical and experimental aspects of non-equilibrium plasmas in different regimes: fundamentals and selected applications, The European Physical Journal D, Volume 75 (2021) no. 6 | DOI:10.1140/epjd/s10053-021-00186-5
  • Joseph P. P. Gore; Edward J. D. Mahoney; James A. Smith; Michael N. R. Ashfold; Yuri A. Mankelevich Imaging and Modeling C2 Radical Emissions from Microwave Plasma-Activated Methane/Hydrogen Gas Mixtures: Contributions from Chemiluminescent Reactions and Investigations of Higher-Pressure Effects and Plasma Constriction, The Journal of Physical Chemistry A, Volume 125 (2021) no. 19, p. 4184 | DOI:10.1021/acs.jpca.1c01924
  • Zeyang Ren; Dandan Lv; Jiamin Xu; Jinfeng Zhang; Jincheng Zhang; Kai Su; Chunfu Zhang; Yue Hao High temperature (300 °C) ALD grown Al2O3 on hydrogen terminated diamond: Band offset and electrical properties of the MOSFETs, Applied Physics Letters, Volume 116 (2020) no. 1 | DOI:10.1063/1.5126359
  • Nobuteru Tsubouchi Conversions of a stacking fault to threading dislocations in homoepitaxial diamond growth studied by transmission electron microscopy, Applied Physics Letters, Volume 117 (2020) no. 22 | DOI:10.1063/5.0031367
  • Alexandre Tallaire; Ovidiu Brinza; Paul Huillery; Tom Delord; Clément Pellet-Mary; Robert Staacke; Bernd Abel; Sébastien Pezzagna; Jan Meijer; Nadia Touati; Laurent Binet; Alban Ferrier; Philippe Goldner; Gabriel Hetet; Jocelyn Achard High NV density in a pink CVD diamond grown with N2O addition, Carbon, Volume 170 (2020), p. 421 | DOI:10.1016/j.carbon.2020.08.048
  • Michael N. R. Ashfold; Jonathan P. Goss; Ben L. Green; Paul W. May; Mark E. Newton; Chloe V. Peaker Nitrogen in Diamond, Chemical Reviews, Volume 120 (2020) no. 12, p. 5745 | DOI:10.1021/acs.chemrev.9b00518
  • Krishna Yaddanapudi Ab initio calculations of the thermal properties of boron arsenide, Computational Materials Science, Volume 184 (2020), p. 109887 | DOI:10.1016/j.commatsci.2020.109887
  • Bo Yang; Rongjun Zhang; Qiao Shen; Libin Zhang; Zhiyin Gan; Sheng Liu Study on the lateral growth of the diamond in the substrate holder and the effect of temperature gradient on the large-area diamond surface morphology, Journal of Materials Science, Volume 55 (2020) no. 36, p. 17072 | DOI:10.1007/s10853-020-05256-4
  • J Achard; V Jacques; A Tallaire Chemical vapour deposition diamond single crystals with nitrogen-vacancy centres: a review of material synthesis and technology for quantum sensing applications, Journal of Physics D: Applied Physics, Volume 53 (2020) no. 31, p. 313001 | DOI:10.1088/1361-6463/ab81d1
  • D. A. Romanov; I. A. Prokhorov; A. E. Voloshin; V. G. Kosushkin; A. P. Bolshakov; V. G. Ralchenko Double-Crystal X-Ray Diffractometry and Topography Methods in the Analysis of the Real Structure of Crystals, Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, Volume 14 (2020) no. 6, p. 1113 | DOI:10.1134/s1027451020060130
  • A.L. Vikharev; M.A. Lobaev; A.M. Gorbachev; D.B. Radishev; V.A. Isaev; S.A. Bogdanov Investigation of homoepitaxial growth by microwave plasma CVD providing high growth rate and high quality of diamond simultaneously, Materials Today Communications, Volume 22 (2020), p. 100816 | DOI:10.1016/j.mtcomm.2019.100816
  • Gai Wu; Qijun Wang; Yanxue Wu; Xiang Sun; Jia Liao; Junheng Pan; Meihua Chen; Makoto Kasu; Sheng Liu Evolution of defects, morphologies and fundamental growth characteristics of CVD diamond films induced by nitrogen addition, Materials Today Communications, Volume 25 (2020), p. 101504 | DOI:10.1016/j.mtcomm.2020.101504
  • Paul W. May CVD Diamond and Nanodiamond: Versatile Materials for Countering a Wide Range of CBRN Threats, Nanoscience and Nanotechnology in Security and Protection against CBRN Threats (2020), p. 141 | DOI:10.1007/978-94-024-2018-0_12
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  • Anatoly Tomilenko; Valeri Sonin; Taras Bul’bak; Aleksei Chepurov Composition of volatile components in the polycrystalline CVD diamond (by coupled gas chromatographic–mass spectrometric analysis), Carbon Letters, Volume 29 (2019) no. 4, p. 327 | DOI:10.1007/s42823-019-00037-9
  • Bo Yang; Qiao Shen; Zhiyin Gan; Sheng Liu Analysis of improving the edge quality and growth rate of single-crystal diamond growth using a substrate holder, CrystEngComm, Volume 21 (2019) no. 43, p. 6574 | DOI:10.1039/c9ce01402k
  • A.P. Bolshakov; V.G. Ralchenko; V.Y. Yurov; G. Shu; E.V. Bushuev; A.A. Khomich; E.E. Ashkinazi; D.N. Sovyk; I.A. Antonova; S.S. Savin; V.V. Voronov; M.Y. Shevchenko; B. Dai; J. Zhu Enhanced deposition rate of polycrystalline CVD diamond at high microwave power densities, Diamond and Related Materials, Volume 97 (2019), p. 107466 | DOI:10.1016/j.diamond.2019.107466
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