Interfacial reaction during dewetting of ultrathin silicon on insulator

Koichi Sudoh; Muneyuki Naito

doi:10.1016/j.crhy.2013.06.008

Trends and perspectives in solid-state wetting / Mouillage solide–solide : tendances et perspectives

Interfacial reaction during dewetting of ultrathin silicon on insulator
[Réaction interfaciale au cours du démouillage de films ultrafins de silicium sur un isolant]

Koichi Sudoh ¹ ; Muneyuki Naito ²

¹ The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
² Department of Chemistry, Konan University, Okamoto, Higashinada, Kobe, Hyogo 658-8501, Japan

Comptes Rendus. Physique, Volume 14 (2013) no. 7, pp. 601-606.

Résumé
Abstract

Cet article sʼintéresse à la réaction interfaciale Si/SiO₂ pendant le démouillage solide–solide de films ultrafins de Si(001) de 7 nm dʼépaisseur sur des substrats de SiO₂. Immédiatement après formation de nanocristaux de silicium au front de démouillage, une dépression au niveau de lʼinterface Si/SiO₂ survient sur le bord du nanocristal à cause de la réaction interfaciale. En examinant la morphologie de lʼinterface Si/SiO₂ pour des nanocristaux situés à différentes distances du front de démouillage, nous mettons en évidence une croissance linéaire de la profondeur de lʼinterface avec le temps. Nous avons aussi estimé lʼénergie dʼactivation effective de la dépression interfaciale à environ 3,9 eV. De plus, nous expliquons lʼeffet de la réaction interfaciale sur le changement morphologique actif impliqué dans la propagation du front de démouillage.

We have studied the Si/SiO₂ interfacial reaction during solid-state dewetting of 7-nm-thick Si(001) ultrathin films on SiO₂ substrates. Immediately after formation of Si nanocrystals at the dewetting front, Si/SiO₂ interface depression occurs at the edge of the nanocrystal because of the interfacial reaction. By examining the Si/SiO₂ interface morphology for nanocrystals at different distances from the dewetting front, we found that the interface depth increases linearly with time. We also estimated that the effective activation energy for the interfacial depression is about 3.9 eV. Furthermore, we explain the effect of the interfacial reaction on the active morphological change involved in dewetting front propagation.

Publié le : 2013-07-31

DOI : 10.1016/j.crhy.2013.06.008

Keywords: Interfacial reaction, Dewetting, Nanocrystal, Silicon on insulator
Mot clés : Réaction interfaciale, Démouillage, Nanocristal, Silicium sur isolant

Affiliations des auteurs :

Koichi Sudoh ¹ ; Muneyuki Naito ²

¹ The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
² Department of Chemistry, Konan University, Okamoto, Higashinada, Kobe, Hyogo 658-8501, Japan

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     author = {Koichi Sudoh and Muneyuki Naito},
     title = {Interfacial reaction during dewetting of ultrathin silicon on insulator},
     journal = {Comptes Rendus. Physique},
     pages = {601--606},
     publisher = {Elsevier},
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     number = {7},
     year = {2013},
     doi = {10.1016/j.crhy.2013.06.008},
     language = {en},
}

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Koichi Sudoh; Muneyuki Naito. Interfacial reaction during dewetting of ultrathin silicon on insulator. Comptes Rendus. Physique, Volume 14 (2013) no. 7, pp. 601-606. doi : 10.1016/j.crhy.2013.06.008. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/j.crhy.2013.06.008/

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