Single- and narrow-line photoluminescence in a boron nitride-supported MoSe$_2$/graphene heterostructure

Luis Enrique Parra López; Loïc Moczko; Joanna Wolff; Aditya Singh; Etienne Lorchat; Michelangelo Romeo; Takashi Taniguchi; Kenji Watanabe; Stéphane Berciaud

doi:10.5802/crphys.58

Single- and narrow-line photoluminescence in a boron nitride-supported MoSe

_{2}

/graphene heterostructure

Luis Enrique Parra López ¹ ; Loïc Moczko ¹ ; Joanna Wolff ¹ ; Aditya Singh ^2,¹ ; Etienne Lorchat ¹ ; Michelangelo Romeo ¹ ; Takashi Taniguchi ³ ; Kenji Watanabe ⁴ ; Stéphane Berciaud ^5,¹

¹ Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, F-67000 Strasbourg, France
² Department of Physics, Indian Institute of Technology Delhi, 110016, New Delhi, India
³ International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
⁴ Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
⁵ Institut Universitaire de France, 1 rue Descartes, 75231 Paris cedex 05, France

Comptes Rendus. Physique, Volume 22 (2021) no. S4, pp. 77-88.

Résumé

Heterostructures made from van der Waals (vdW) materials provide a template to investigate a wealth of proximity effects at atomically sharp two-dimensional (2D) heterointerfaces. In particular, near-field charge and energy transfer in vdW heterostructures made from semiconducting transition metal dichalcogenides (TMD) have recently attracted interest to design model 2D “donor–acceptor” systems and new optoelectronic components. Here, using Raman scattering and photoluminescence spectroscopies, we report a comprehensive characterization of a molybedenum diselenide ( ${MoSe}_{2}$ ) monolayer deposited onto hexagonal boron nitride (hBN) and capped by mono- and bilayer graphene. Along with the atomically flat hBN susbstrate, a single graphene epilayer is sufficient to passivate the ${MoSe}_{2}$ layer and provides a homogenous environment without the need for an extra capping layer. As a result, we do not observe photo-induced doping in our heterostructure and the ${MoSe}_{2}$ excitonic linewidth gets as narrow as 1.6 meV, approaching the homogeneous limit. The semi-metallic graphene layer neutralizes the 2D semiconductor and enables picosecond non-radiative energy transfer that quenches radiative recombination from long-lived states. Hence, emission from the neutral band edge exciton largely dominates the photoluminescence spectrum of the ${MoSe}_{2}$ /graphene heterostructure. Since this exciton has a picosecond radiative lifetime at low temperature, comparable with the non-radiative transfer time, its low-temperature photoluminescence is only quenched by a factor of $3.3 \pm 1$ and $4.4 \pm 1$ in the presence of mono- and bilayer graphene, respectively. Finally, while our bare ${MoSe}_{2}$ on hBN exhibits negligible valley polarization at low temperature and under near-resonant excitation, we show that interfacing ${MoSe}_{2}$ with graphene yields a single-line emitter with degrees of valley polarization and coherence up to $\sim$ 15 %.

Première publication : 2021-03-26
Publié le : 2022-03-08

DOI : 10.5802/crphys.58

Mots clés : van der Waals heterostructures, Transition metal dichalcogenides, Graphene, Energy transfer, Excitons, Optoelectronics, Valleytronics

Affiliations des auteurs :

Luis Enrique Parra López ¹ ; Loïc Moczko ¹ ; Joanna Wolff ¹ ; Aditya Singh ^{2, 1} ; Etienne Lorchat ¹ ; Michelangelo Romeo ¹ ; Takashi Taniguchi ³ ; Kenji Watanabe ⁴ ; Stéphane Berciaud ^{5, 1}

¹ Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, F-67000 Strasbourg, France
² Department of Physics, Indian Institute of Technology Delhi, 110016, New Delhi, India
³ International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
⁴ Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
⁵ Institut Universitaire de France, 1 rue Descartes, 75231 Paris cedex 05, France

Licence :

CC-BY 4.0

Droits d'auteur : Les auteurs conservent leurs droits

@article{CRPHYS_2021__22_S4_77_0,
     author = {Luis Enrique Parra L\'opez and Lo{\"\i}c Moczko and Joanna Wolff and Aditya Singh and Etienne Lorchat and Michelangelo Romeo and Takashi Taniguchi and Kenji Watanabe and St\'ephane Berciaud},
     title = {Single- and narrow-line photoluminescence in a boron nitride-supported {MoSe}$_2$/graphene heterostructure},
     journal = {Comptes Rendus. Physique},
     pages = {77--88},
     publisher = {Acad\'emie des sciences, Paris},
     volume = {22},
     number = {S4},
     year = {2021},
     doi = {10.5802/crphys.58},
     language = {en},
}

TY  - JOUR
AU  - Luis Enrique Parra López
AU  - Loïc Moczko
AU  - Joanna Wolff
AU  - Aditya Singh
AU  - Etienne Lorchat
AU  - Michelangelo Romeo
AU  - Takashi Taniguchi
AU  - Kenji Watanabe
AU  - Stéphane Berciaud
TI  - Single- and narrow-line photoluminescence in a boron nitride-supported MoSe$_2$/graphene heterostructure
JO  - Comptes Rendus. Physique
PY  - 2021
SP  - 77
EP  - 88
VL  - 22
IS  - S4
PB  - Académie des sciences, Paris
DO  - 10.5802/crphys.58
LA  - en
ID  - CRPHYS_2021__22_S4_77_0
ER  -

%0 Journal Article
%A Luis Enrique Parra López
%A Loïc Moczko
%A Joanna Wolff
%A Aditya Singh
%A Etienne Lorchat
%A Michelangelo Romeo
%A Takashi Taniguchi
%A Kenji Watanabe
%A Stéphane Berciaud
%T Single- and narrow-line photoluminescence in a boron nitride-supported MoSe$_2$/graphene heterostructure
%J Comptes Rendus. Physique
%D 2021
%P 77-88
%V 22
%N S4
%I Académie des sciences, Paris
%R 10.5802/crphys.58
%G en
%F CRPHYS_2021__22_S4_77_0

Luis Enrique Parra López; Loïc Moczko; Joanna Wolff; Aditya Singh; Etienne Lorchat; Michelangelo Romeo; Takashi Taniguchi; Kenji Watanabe; Stéphane Berciaud. Single- and narrow-line photoluminescence in a boron nitride-supported MoSe$_2$/graphene heterostructure. Comptes Rendus. Physique, Volume 22 (2021) no. S4, pp. 77-88. doi : 10.5802/crphys.58. https://comptes-rendus.academie-sciences.fr/physique/articles/10.5802/crphys.58/

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