The search for manganese incorporation in MoSe<span class="mathjax-formula">$_{{2}}$</span> monolayer epitaxially grown on graphene

Maxime Gay; Minh-Tuan Dau; Céline Vergnaud; Alain Marty; Frédéric Bonell; Hervé Boukari; Colin Paillet; Bérangère Hyot; Hanako Okuno; Pierre Mallet; Jean-Yves Veuillen; Olivier Renault; Matthieu Jamet

doi:10.5802/crphys.69

The search for manganese incorporation in MoSe

_{2}

monolayer epitaxially grown on graphene

Maxime Gay ¹; Minh-Tuan Dau ²; Céline Vergnaud ²; Alain Marty ²; Frédéric Bonell ²; Hervé Boukari ³; Colin Paillet ¹; Bérangère Hyot ¹; Hanako Okuno ⁴; Pierre Mallet ³; Jean-Yves Veuillen ³; Olivier Renault ¹; Matthieu Jamet ²

1. Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France
2. Univ. Grenoble Alpes, CEA, CNRS, Spintec, F-38000 Grenoble, France
3. Univ. Grenoble Alpes, CNRS, Institut Néel, F-38000 Grenoble, France
4. Univ. Grenoble Alpes, CEA, IRIG-MEM, F-38000 Grenoble, France

Comptes Rendus. Physique, Online first (2021), pp. 1-17.

Part of the special issue: Recent advances in 2D material physics

Abstract

The introduction of magnetism in two-dimensional (2D) materials represents an intense field of research nowadays and the quest to reach above-room-temperature ordering temperatures is still underway. Intrinsic ferromagnetism was discovered in 2017 in CrI $_{3}$ and Cr $_{2}$ Ge $_{2}$ Te $_{6}$ in the monolayer form with low Curie temperatures. An alternative method to introduce magnetism into conventional 2D materials is substitutional doping with magnetic impurities similarly to three-dimensional diluted magnetic semiconductors. The case of Mn-doped transition metal dichalcogenide (MoS $_{2}$ , MoSe $_{2}$ , WS $_{2}$ , WSe $_{2}$ ) monolayers is very interesting because combining out-of-plane ferromagnetism and valley contrast leads to ferrovalley materials. In this work, we focus on the incorporation of Mn in MoSe $_{2}$ by molecular beam epitaxy on graphene which has been rarely addressed up to now. By using a multiscale characterization approach, we demonstrate that Mn atoms are incorporated into the MoSe $_{2}$ monolayer up to 5 atomic percent. However, when incorporated into the film, Mn atoms tend to diffuse to the grain edges forming undefined Mo $_{x}$ Mn $_{y}$ Se $_{z}$ phase at grain boundaries after completion of the MoSe $_{2}$ monolayer. This segregation leaves the crystalline and electronic structure of MoSe $_{2}$ unmodified. Above 5%, the saturation of Mn content in MoSe $_{2}$ leads to the formation of epitaxial MnSe clusters.

Online First: 2021-05-03

DOI: https://doi.org/10.5802/crphys.69
Keywords: 2D materials, Magnetic doping, Molecular beam epitaxy, Transmission electron microscopy, Scanning tunneling microscopy, Momentum resolved photoemission electron microscopy
Author's affiliations:

@article{CRPHYS_2021__22_S4_A2_0,
     author = {Maxime Gay and Minh-Tuan Dau and C\'eline Vergnaud and Alain Marty and Fr\'ed\'eric Bonell and Herv\'e Boukari and Colin Paillet and B\'erang\`ere Hyot and Hanako Okuno and Pierre Mallet and Jean-Yves Veuillen and Olivier Renault and Matthieu Jamet},
     title = {The search for manganese incorporation {in~MoSe}$_{{2}}$ monolayer epitaxially grown on graphene},
     journal = {Comptes Rendus. Physique},
     publisher = {Acad\'emie des sciences, Paris},
     year = {2021},
     doi = {10.5802/crphys.69},
     language = {en},
     note = {Online first},
}

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%A Alain Marty
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%A Colin Paillet
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%A Hanako Okuno
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%A Jean-Yves Veuillen
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Maxime Gay; Minh-Tuan Dau; Céline Vergnaud; Alain Marty; Frédéric Bonell; Hervé Boukari; Colin Paillet; Bérangère Hyot; Hanako Okuno; Pierre Mallet; Jean-Yves Veuillen; Olivier Renault; Matthieu Jamet. The search for manganese incorporation in MoSe$_{{2}}$ monolayer epitaxially grown on graphene. Comptes Rendus. Physique, Online first (2021), pp. 1-17. doi : 10.5802/crphys.69.

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