Formation of self-assembled quantum dots induced by the Stranski–Krastanow transition: a comparison of various semiconductor systems

Henri Mariette

doi:10.1016/j.crhy.2004.11.003

Formation of self-assembled quantum dots induced by the Stranski–Krastanow transition: a comparison of various semiconductor systems
[Formation de boîtes quantiques auto-assemblées lors de la transition Stranski–Krastanow : comparaison pour différents systèmes semiconducteurs]

Présenté par : Guy Laval

Henri Mariette ¹

¹ CEA-CNRS group “Nanophysique et Semiconducteurs” : CNRS, laboratoire de spectrométrie physique, université J. Fourier-Grenoble I, and CEA, département de recherche fondamentale sur la matière condensée/SPMM, 17, avenue des Martyrs, 38054 Grenoble, France

Comptes Rendus. Physique, Self-organization on surfaces, Volume 6 (2005) no. 1, pp. 23-32.

Résumé
Abstract

Pour rendre compte de l'apparition (ou non) d'une transition Stranski–Krastanow (variation de 2D à 3D de la morphologie de surface) lors de la croissance épitaxiée de divers semiconducteurs ayant des paramètres de maille différents, nous présentons un modèle à l'équilibre prenant en compte non seulement le désaccord de paramètre, mais aussi l'énergie de formation des dislocations et l'énergie de surface. Cette approche met en évidence l'importance de ces paramètres, en particulier dans le cas des semiconducteurs II–VI tels que CdTe/ZnTe et CdSe/ZnSe : en effet pour ces systèmes, puisque les dislocations sont plus faciles à former que dans le cas des semiconducteurs III–V (i.e. InAs/GaAs) ou IV–IV (i.e. Ge/Si), une transition plastique apparaît aux dépends de la transition élastique 3D. Cependant, en diminuant le coût en énergie de surface, des boîtes quantiques à base de tellures et séléniures peuvent être aussi obtenues. Ceci est mis en évidence expérimentalement par des mesures de diffraction en incidence rasante, de microscopie à force atomique, et de spectroscopie optique. Le modèle est ensuite appliqué au système GaN/AlN, et ses limites sont discutées.

To account for the occurrence (or not) of the Stranski–Krastanow (SK) transition (two-dimensional to 3D change of surface morphology) during the epitaxial growth of various lattice-mismatched semiconductor systems, we present a simple equilibrium model taking into account not only the lattice mismatch, but also the dislocation formation energy and the surface energy. It demonstrates the importance of these parameters especially for II–VI systems such as CdTe/ZnTe and CdSe/ZnSe. For II–VIs indeed, as misfit dislocations are easier to form than in III–Vs (such as InAs/GaAs) or IV systems (Ge/Si), the 3D elastic transition is short-circuited by the plastic transition. Nevertheless, by lowering the surface energy cost, telluride and selenide quantum dots can also be grown as predicted by our model and as shown experimentally by reflection high-energy electron diffraction (RHEED), atomic force microscopy and optical measurements. This model is also applied to the case of GaN/AlN, before discussing its limits.

Publié le : 2005-01-01

DOI : 10.1016/j.crhy.2004.11.003

Keywords: Quantum dots, Semiconductors, Molecular beam epitaxy
Mots-clés : Boîtes quantiques, Semiconducteurs, Épitaxie par jets moléculaires

Affiliations des auteurs :

Henri Mariette ¹

¹ CEA-CNRS group “Nanophysique et Semiconducteurs” : CNRS, laboratoire de spectrométrie physique, université J. Fourier-Grenoble I, and CEA, département de recherche fondamentale sur la matière condensée/SPMM, 17, avenue des Martyrs, 38054 Grenoble, France

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Henri Mariette. Formation of self-assembled quantum dots induced by the Stranski–Krastanow transition: a comparison of various semiconductor systems. Comptes Rendus. Physique, Self-organization on surfaces, Volume 6 (2005) no. 1, pp. 23-32. doi : 10.1016/j.crhy.2004.11.003. https://comptes-rendus.academie-sciences.fr/physique/articles/10.1016/j.crhy.2004.11.003/

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